IRFY2 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IRFY210R1 TT Electronics Power and Hybrid / Semelab Limited	1	Power Field-Effect Transistor, 1.8A I(D), 200V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY210R1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240MEBPBF International Rectifier	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240MEBPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240(M)PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 200V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRFY240(M)PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY230CM Infineon Technologies AG	1	Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY230CM	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRFY230C TT Electronics Resistors	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY230C	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240EC Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240EC	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY230-QR-B TT Electronics Power and Hybrid / Semelab Limited	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRFY230-QR-B	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240CPBF International Rectifier	1	Power Field-Effect Transistor, 16A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRFY240CPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY230CMSCXPBF International Rectifier	1	Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRFY230CMSCXPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY210 TT Electronics Power and Hybrid / Semelab Limited	1	Power Field-Effect Transistor, 1.8A I(D), 200V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY210	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY230 Thomson-CSF Compsants Specific	1	Power Field-Effect Transistor, 7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET	IRFY230	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY230CMSCX International Rectifier	1	Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRFY230CMSCX	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240CSCX Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240CSCX	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY220 TT Electronics Resistors	1	Power Field-Effect Transistor, 4A I(D), 200V, 0.92ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY220	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY230SM TT Electronics Power and Hybrid / Semelab Limited	1	TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,9A I(D),CHIP / DIE	IRFY230SM	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRFY230-QR-BR1 TT Electronics Resistors	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRFY230-QR-BR1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY220SM TT Electronics Power and Hybrid / Semelab Limited	1	TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,5A I(D),CHIP / DIE	IRFY220SM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY210C TT Electronics Resistors	1	Power Field-Effect Transistor, 1.8A I(D), 200V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY210C	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240ED Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240ED	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY230 TT Electronics Resistors	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRFY230	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240CMSCV Infineon Technologies AG	1	Power Field-Effect Transistor, 16A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRFY240CMSCV	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240SCX Infineon Technologies AG	1	Power Field-Effect Transistor, 16A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRFY240SCX	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY210C TT Electronics Power and Hybrid / Semelab Limited	1	Power Field-Effect Transistor, 1.8A I(D), 200V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY210C	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY230-JQR-B TT Electronics Power and Hybrid / Semelab Limited	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRFY230-JQR-B	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240E Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240E	3D model not available Symbol and footprint not available 0	0 Build or Request
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