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IRHM4 Model Download Search Results

Showing 22 of 72 results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image
IRHM4250PBF International Rectifier
1 Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 IRHM4250PBF 0 Build or Request
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IRHM4250DPBF Infineon Technologies AG
1 Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN IRHM4250DPBF 0 Build or Request
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IRHM4250PBF Infineon Technologies AG
1 Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 IRHM4250PBF 0 Build or Request
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IRHM4230D International Rectifier
1 Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN IRHM4230D 0 Build or Request
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IRHM4230 Infineon Technologies AG
1 Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, IRHM4230 0 Build or Request
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IRHM4064D International Rectifier
1 Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN IRHM4064D 0 Build or Request
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IRHM4130U Infineon Technologies AG
1 Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN IRHM4130U 0 Build or Request
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IRHM4150PBF International Rectifier
1 Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA IRHM4150PBF 0 Build or Request
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IRHM4150 International Rectifier
1 Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN IRHM4150 0 Build or Request
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IRHM4260 Infineon Technologies AG
1 Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETICALLY SEALED, CERAMIC PACKAGE-3 IRHM4260 0 Build or Request
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IRHM4054U International Rectifier
1 Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN IRHM4054U 0 Build or Request
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IRHM4064UPBF International Rectifier
1 Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN IRHM4064UPBF 0 Build or Request
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IRHM4054PBF International Rectifier
1 Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA IRHM4054PBF 0 Build or Request
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IRHM4Z60PBF Infineon Technologies AG
1 Power Field-Effect Transistor, 35A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN IRHM4Z60PBF 0 Build or Request
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IRHM4160 Infineon Technologies AG
1 Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 IRHM4160 0 Build or Request
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IRHM4130PBF International Rectifier
1 Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA IRHM4130PBF 0 Build or Request
Part Image Part Image
IRHM4130 Infineon Technologies AG
1 Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, IRHM4130 0 Build or Request
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IRHM4064DPBF International Rectifier
1 Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN IRHM4064DPBF 0 Build or Request
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IRHM4260PBF Infineon Technologies AG
1 Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETICALLY SEALED, CERAMIC PACKAGE-3 IRHM4260PBF 0 Build or Request
Part Image Part Image
IRHM4260DPBF International Rectifier
1 Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN IRHM4260DPBF 0 Build or Request
Part Image Part Image
IRHM4130UPBF International Rectifier
1 Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN IRHM4130UPBF 0 Build or Request
Part Image Part Image
IRHM4064 International Rectifier
1 Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3 IRHM4064 0 Build or Request
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