IRHNJ Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IRHNJ3230SCS Infineon Technologies AG	1	Power Field-Effect Transistor, 9.4A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHNJ3230SCS	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHNJ57133SEPBF International Rectifier	1	Power Field-Effect Transistor, 20A I(D), 130V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHNJ57133SEPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHNJ593034 Infineon Technologies AG	1	Power Field-Effect Transistor	IRHNJ593034	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHNJ67C30 International Rectifier	1	Power Field-Effect Transistor, 3.4A I(D), 600V, 2.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHNJ67C30	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRHNJ598130SCS Infineon Technologies AG	1	Power Field-Effect Transistor	IRHNJ598130SCS	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHNJ7430SE Infineon Technologies AG	1	Power Field-Effect Transistor, 4.4A I(D), 500V, 1.77ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHNJ7430SE	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHNJ58130PBF International Rectifier	1	Power Field-Effect Transistor, 22A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHNJ58130PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHNJ63134 Infineon Technologies AG	1	Power Field-Effect Transistor, 19A I(D), 150V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHNJ63134	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHNJ593Z30 Infineon Technologies AG	1	Power Field-Effect Transistor, 22A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET	IRHNJ593Z30	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHNJC63230 Infineon Technologies AG	1	Power Field-Effect Transistor, 16A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHNJC63230	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHNJ4130 International Rectifier	1	Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHNJ4130	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHNJ9A7034SCS Infineon Technologies AG	1	Power Field-Effect Transistor, 40A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHNJ9A7034SCS	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHNJC9A7034 Infineon Technologies AG	1	Power Field-Effect Transistor	IRHNJC9A7034	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHNJ64130 Infineon Technologies AG	1	Power Field-Effect Transistor, 22A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET	IRHNJ64130	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHNJ9A7034 Infineon Technologies AG	1	Power Field-Effect Transistor, 40A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHNJ9A7034	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRHNJ5130 Infineon Technologies AG	1	Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHNJ5130	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHNJ67234 International Rectifier	1	Power Field-Effect Transistor, 12.4A I(D), 250V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHNJ67234	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHNJ597034CM Infineon Technologies AG	1	Power Field-Effect Transistor	IRHNJ597034CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHNJ54130PBF International Rectifier	1	Power Field-Effect Transistor, 22A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHNJ54130PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHNJ593034 International Rectifier	1	Power Field-Effect Transistor, 21A I(D), 60V, 0.085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET	IRHNJ593034	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHNJ593230 International Rectifier	1	Power Field-Effect Transistor, 8A I(D), 200V, 0.505ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET	IRHNJ593230	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHNJ7230PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 9.4A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHNJ7230PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHNJ57230SCSPBF International Rectifier	1	Power Field-Effect Transistor, 13A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHNJ57230SCSPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHNJ7430SEPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 4.4A I(D), 500V, 1.77ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHNJ7430SEPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHNJ9230 Infineon Technologies AG	1	Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET	IRHNJ9230	3D model not available Symbol and footprint not available 0	0 Build or Request
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