IRL25 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IRL2505-030 Infineon Technologies AG	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL2505-030	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505S International Rectifier	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRL2505S	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-012PBF International Rectifier	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL2505-012PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-002 Infineon Technologies AG	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL2505-002	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRL2505-011PBF International Rectifier	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL2505-011PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-019 International Rectifier	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL2505-019	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-015 International Rectifier	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL2505-015	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-017PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL2505-017PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-011 Infineon Technologies AG	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL2505-011	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-004PBF International Rectifier	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL2505-004PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-018PBF International Rectifier	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL2505-018PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505SPBF International Rectifier	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRL2505SPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-019PBF International Rectifier	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL2505-019PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-031 International Rectifier	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL2505-031	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505PBF International Rectifier	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL2505PBF	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRL2505-003PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL2505-003PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-030PBF International Rectifier	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL2505-030PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-011PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL2505-011PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-013 Infineon Technologies AG	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL2505-013	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-012PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL2505-012PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-024 International Rectifier	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL2505-024	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-029 Infineon Technologies AG	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL2505-029	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-005PBF International Rectifier	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL2505-005PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-009 Infineon Technologies AG	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL2505-009	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505S Infineon Technologies AG	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRL2505S	3D model not available Symbol and footprint not available 0	0 Build or Request
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