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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IRLML5103PBF Infineon Technologies AG	1	Small Signal Field-Effect Transistor, 0.76A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML5103PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML0030TRPBF International Rectifier	1	Power Field-Effect Transistor, 5.3A I(D), 30V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML0030TRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6402PBF International Rectifier	1	Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6402PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML5103GPBF Infineon Technologies AG	1	Small Signal Field-Effect Transistor, 0.76A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML5103GPBF	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRLML2502TRPBF-1 International Rectifier	1	Power Field-Effect Transistor	IRLML2502TRPBF-1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML5103 Infineon Technologies AG	1	Small Signal Field-Effect Transistor, 0.76A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET	IRLML5103	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6402 SLKOR	1		IRLML6402	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML2402TRPBF VBsemi Electronics Co Ltd	1	N-Channel 20 V MOSFET in SOT-23 package with 0.028 ohm RDS(on) at 4.5 V VGS, suitable for DC/DC converters and load switching in portable applications.	IRLML2402TRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML2502PBF International Rectifier	1	Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML2502PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML5103TRPBF-1 Infineon Technologies AG	1	Small Signal Field-Effect Transistor, 0.76A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET	IRLML5103TRPBF-1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6302TRPBF International Rectifier	1	Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6302TRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6401TR International Rectifier	1	Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6401TR	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML2246 Shenzhen Heketai Electronics Co Ltd	1	P-channel MOSFET in SOT-23 package with -20V drain-source voltage, -2.6A continuous drain current, and 135mΩ on-resistance at -4.5V gate-source voltage, suitable for surface mount applications.	IRLML2246	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML2803 Shenzhen Heketai Electronics Co Ltd	1	N-channel MOSFET in SOT-23 package with 30V drain-source voltage, 6.8A continuous drain current, and low on-resistance suitable for switching applications.	IRLML2803	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML2502TRPBF VBsemi Electronics Co Ltd	1	N-Channel 20 V MOSFET in SOT-23 package with 0.028 ohm RDS(on) at 4.5 V VGS, 6 A continuous drain current, and 8.8 nC gate charge, suitable for DC/DC converters and load switching applications.	IRLML2502TRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRLML6346 Shenzhen Heketai Electronics Co Ltd	1	N-Channel Power MOSFET in SOT-23 package with 30V drain-source voltage, ultralow on-resistance of 63mΩ at 4.5V gate voltage, suitable for PWM and load switch applications.	IRLML6346	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML5103TRHR International Rectifier	1	Small Signal Field-Effect Transistor, 0.76A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET	IRLML5103TRHR	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML9301TRPBF International Rectifier	1	Power Field-Effect Transistor, 3.6A I(D), 30V, 0.064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML9301TRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML2244TRPBF International Rectifier	1	Power Field-Effect Transistor, 4.3A I(D), 20V, 0.054ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML2244TRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML2803TRPBF International Rectifier	1	Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML2803TRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML9303TRPBF International Rectifier	1	Power Field-Effect Transistor, 2.3A I(D), 30V, 0.165ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML9303TRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML2402PBF International Rectifier	1	Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML2402PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6302TRPBF-1 Infineon Technologies AG	1	Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6302TRPBF-1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6402TR International Rectifier	1	Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6402TR	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML5203GPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 3A I(D), 30V, 0.098ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML5203GPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
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