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ISL73051ASEHF/PROTO
Integrated Device Technology Inc
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1 | Adjustable Positive LDO Regulator | ISL73051ASEHF/PROTO |
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ISL73096RHVF
Intersil Corporation
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1 | RF POWER TRANSISTOR | ISL73096RHVF |
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ISL73023SEHMX
Intersil Corporation
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1 | Power Field-Effect Transistor | ISL73023SEHMX |
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ISL73141SEHMF7
Renesas Electronics
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1 | The ISL73141SEH is a radiation hardened, high-precision, 14-bit, 1MSPS SAR analog-to-digital converter (ADC) that features an SNR of 82.1dBFS and dissipates only 60mW when operating from a 5V supply. With a 3.3V supply, the ISL73141SEH operates at 750KSPS with a power consumption of 28mW.The product features 1MSPS throughput with no data latency and features excellent linearity and dynamic accuracy. The ISL73141SEH provides a high-speed SPI-compatible serial interface that supports logic ranging from 2.2V t | ISL73141SEHMF7 |
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ISL738845ASEHVF/PROTO
Renesas Electronics
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1 | Radiation Hardened, High Performance Industry Standard Single-Ended Current Mode PWM Controller | ISL738845ASEHVF/PROTO |
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ISL73141SEHMFN
Renesas Electronics
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1 | Radiation Hardened 14-Bit 1MSPS SAR ADC | ISL73141SEHMFN |
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ISL73051ASEHVF
Renesas Electronics
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1 | The ISL75051ASEH and ISL73051ASEH are radiation hardened low-voltage, high-current, single-output LDOs specified for up to 3.0A of continuous output current. These devices operate across an input voltage range of 2.2V to 6.0V and can provide output voltages of 0.8V to 5.0V adjustable, based on the resistor divider setting. Dropout voltages as low as 65mV can be achieved using the device. The OCP pin allows the short-circuit output current limit threshold to be programmed by a resistor from the OCP pin to GN | ISL73051ASEHVF |
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ISL738840ASEHX/SMPL
Renesas Electronics
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1 | The ISL738840ASEH is a high-performance, radiation hardened drop-in replacement for the popular 28C4x and 18C4x PWM controllers suitable for a wide range of power conversion applications including boost, flyback and isolated output configurations. Fast signal propagation and output switching characteristics make these ideal products for existing and new designs. Features include up to 13.2V operation, low operating current, 90µA typical start-up current, adjustable operating frequency to 1MHz, and high peak | ISL738840ASEHX/SMPL |
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ISL73040SEHVX
Renesas Electronics
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1 | The ISL70040SEH and ISL73040SEH are low-side drivers designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The ISL70040SEH operates with a supply voltage from 4. 5V to 13. 2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device. The ISL70040SEH and ISL73040SEH have a 4. 5V gate drive voltage (VDRV) generated using an internal regulator which prevents th | ISL73040SEHVX |
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ISL73062SEHVF
Renesas Electronics
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1 | The ISL73062SEH is a radiation hardened single channel load switch featuring ultra-low rON and controlled rise time. This device uses a NMOS pass device as the main switch that operates across an input voltage range of 0V to (VCC -2V) and can support a maximum of 10A continuous current. The device has a VCC pin to power the logic and driver. The VCC voltage range is 3V to 5.5V. Simple ON/OFF digital control inputs make the device capable of interfacing directly with low voltage control signals from an FPGA, | ISL73062SEHVF |
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ISL738845ASEHX/SMPL
Renesas Electronics
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1 | The ISL738845ASEH is a high-performance, radiation hardened drop-in replacement for the popular 28C4x and 18C4x PWM controllers suitable for a wide range of power conversion applications including boost, flyback and isolated output configurations. Fast signal propagation and output switching characteristics make these ideal products for existing and new designs. Features include up to 13.2V operation, low operating current, 90µA typical start-up current, adjustable operating frequency to 1MHz, and high peak | ISL738845ASEHX/SMPL |
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ISL73127RHVF
Renesas Electronics
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1 | The ISL73096, ISL73127 and ISL73128 are radiation hardened bipolar transistor arrays. The ISL73096 consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127 consists of five NPN transistors on a common substrate. The ISL73128 consists of five PNP transistors on a common substrate. The ISL73096EH, ISL73127EH and ISL73128EH devices encompass all of the production testing of the ISL73096RH, ISL73127RH and ISL73128RH devices and additionally are tested in the Intersil Enhance | ISL73127RHVF |
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ISL73100SEHF/PROTO
Renesas Electronics
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1 | The ISL73100SEH is a radiation hardened 40V current sense amplifier built on the Renesas proprietary PR40 SOI process. This device has a wide power supply range of 2.7V to 40V. The input common-mode voltage is independent of the supply voltage and extends from -0.3V to 40.0V, making them ideal to use in both high-side and low-side applications.The ISL73100SEH is a trans-conductance amplifier that monitors current using an external sense resistor and outputs a current proportional to the sensed voltage. The | ISL73100SEHF/PROTO |
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ISL73052SEHVX
Renesas Electronics
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1 | The ISL75052SEH and ISL73052SEH are radiation hardened, single output LDOs specified for an output current of 1.5A. The devices operate from an input voltage range of 4.0V to 13.2V and provide for output voltages of 0.6V to 12.7V. The output is adjustable based on a resistor divider setting. Dropout voltages as low as 75mV (at 0.5A) typical can be realized using the devices. This allows you to improve the system efficiency by lowering VIN to nearly VOUT. The ENABLE feature allows the part to be placed into | ISL73052SEHVX |
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ISL73591SEHF/PROTO
Renesas Electronics
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1 | The ISL70591SEH, ISL73591SEH, ISL70592SEH, and ISL73592SEH are radiation hardened precision 100µA and 1mA current source ICs. The devices have excellent accuracy of ±1% over a wide operating voltage range of 3V to 40V and over a temperature range of -55 °C to +125 °C. Fabricated with the Renesas proprietary PR40 Silicon On Insulator (SOI) process, the devices are immune to single event latch-up. The high output impedance of the devices makes them insensitive to voltage drops across long lines. They can with | ISL73591SEHF/PROTO |
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ISL738841ASEHVD
Renesas Electronics
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1 | The ISL738841ASEH is a high-performance, radiation hardened drop-in replacement for the popular 28C4x and 18C4x PWM controllers suitable for a wide range of power conversion applications including boost, flyback and isolated output configurations. Fast signal propagation and output switching characteristics make these ideal products for existing and new designs. Features include up to 13.2V operation, low operating current, 90µA typical start-up current, adjustable operating frequency to 1MHz, and high peak | ISL738841ASEHVD |
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ISL738843ASEHVF
Renesas Electronics
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1 | The ISL738843ASEH is a high-performance, radiation hardened drop-in replacement for the popular 28C4x and 18C4x PWM controllers suitable for a wide range of power conversion applications including boost, flyback and isolated output configurations. Fast signal propagation and output switching characteristics make these ideal products for existing and new designs. Features include up to 13.2V operation, low operating current, 90µA typical start-up current, adjustable operating frequency to 1MHz, and high peak | ISL738843ASEHVF |
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ISL73128RHX/SAMPLE
Renesas Electronics
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1 | The ISL73096, ISL73127 and ISL73128 are radiation hardened bipolar transistor arrays. The ISL73096 consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127 consists of five NPN transistors on a common substrate. The ISL73128 consists of five PNP transistors on a common substrate. The ISL73096EH, ISL73127EH and ISL73128EH devices encompass all of the production testing of the ISL73096RH, ISL73127RH and ISL73128RH devices and additionally are tested in the Intersil Enhance | ISL73128RHX/SAMPLE |
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ISL738841ASEHX/SMPL
Renesas Electronics
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1 | The ISL738841ASEH is a high-performance, radiation hardened drop-in replacement for the popular 28C4x and 18C4x PWM controllers suitable for a wide range of power conversion applications including boost, flyback and isolated output configurations. Fast signal propagation and output switching characteristics make these ideal products for existing and new designs. Features include up to 13.2V operation, low operating current, 90µA typical start-up current, adjustable operating frequency to 1MHz, and high peak | ISL738841ASEHX/SMPL |
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ISL73007SEHF/PROTO
Renesas Electronics
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1 | The ISL73007SEH is a radiation hardened Point-of-Load (POL) buck regulator that provides up to 3A of output current capability with an input voltage ranging from 3V to 18V. The device uses constant frequency peak current mode control architecture for fast loop transient response. The device uses internal compensation suitable for the entire switching frequency range or an external Type II compensation to optimize performance and stabilize the loop. The ISL73007SEH is specified over a switching frequency of | ISL73007SEHF/PROTO |
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ISL73814SEHVF
Renesas Electronics
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1 | The ISL72814SEH and ISL73814SEH are radiation hardened high-voltage, high-current, driver circuit ICs fabricated using the Renesas proprietary PR40 Silicon-on-Insulator (SOI) process technology to mitigate single-event effects. The devices integrate 16 driver channels that feature a high-voltage (42V), high-current (700mA) open-emitter PNP output stage. To further reduce solution size, the ISL72814SEH and ISL73814SEH integrate a 4-bit, 16-channel decoder with Enable. This conveniently allows you to select 1 | ISL73814SEHVF |
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ISL73051ASEHVX
Integrated Device Technology Inc
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1 | Adjustable Positive LDO Regulator | ISL73051ASEHVX |
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ISL73127EHVF
Intersil Corporation
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1 | RF POWER TRANSISTOR | ISL73127EHVF |
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ISL73841SEHVF
Intersil Corporation
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1 | Single-Ended Multiplexer | ISL73841SEHVF |
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ISL73321SEHVX
Intersil Corporation
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1 | Power Supply Support Circuit | ISL73321SEHVX |
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