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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	JMSL0406AKQ Jiangsu JieJie Microelectronics Co Ltd	1	40 V N-Ch Power MOSFET in TO-252-3L package with 4.7 mΩ RDS(ON) at VGS = 10V, 78 A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications.	JMSL0406AKQ	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0601AGQ Jiangsu JieJie Microelectronics Co Ltd	1	60 V N-Ch Power MOSFET in PDFN5x6-8L package with 0.90 mΩ RDS(ON) at VGS = 10V, 315 A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications.	JMSL0601AGQ	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0601BG Jiangsu JieJie Microelectronics Co Ltd	1	60V N-Ch Power MOSFET in PDFN5x6-8L package with 1.25 mΩ typical RDS(ON) at VGS = 10V, 226A continuous drain current, low gate charge, and 100% UIS tested for power management and switching applications.	JMSL0601BG	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0609APD Jiangsu JieJie Microelectronics Co Ltd	1	60V N-channel Power MOSFET in SOP-8L package with 7.0 mΩ typical RDS(ON) at 10V VGS, 10A continuous drain current, low gate charge, and designed for power management and switching applications.	JMSL0609APD	3D model not available Symbol and footprint not available 0	0 Build or Request

	JMSL0602AG Jiangsu JieJie Microelectronics Co Ltd	1	60V N-Ch Power MOSFET in PDFN5x6-8L package with 1.8 mΩ typical RDS(ON) at 10V VGS, 154A continuous drain current, low gate charge, and 100% UIS tested for power management and switching applications.	JMSL0602AG	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0615APD Jiangsu JieJie Microelectronics Co Ltd	1	60V dual N-channel power MOSFET in SOP-8L package with typical RDS(ON) of 12 mΩ at VGS = 10V, low gate charge, and designed for power management and switching applications.	JMSL0615APD	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0612AK Jiangsu JieJie Microelectronics Co Ltd	1	60 V N-Ch Power MOSFET in TO-252-3L package with 9.9 mΩ RDS(ON) at VGS = 10V, 52 A continuous drain current, low gate charge, and 100% UIS tested for power management and switching applications.	JMSL0612AK	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0307AG Jiangsu JieJie Microelectronics Co Ltd	1	30V N-channel Power MOSFET in PDFN5x6-8L package with 3.8 mΩ typical RDS(ON) at VGS = 10V, 65A continuous drain current, low gate charge, and 100% UIS tested for power management and motor driving applications.	JMSL0307AG	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0603BG Jiangsu JieJie Microelectronics Co Ltd	1	60V N-channel Power MOSFET with 142A continuous drain current, 2.4mΩ typical RDS(ON) at VGS = 10V, 3.4mΩ at VGS = 4.5V, and 8-pin PDFN5x6 package for power management and switching applications.	JMSL0603BG	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0302PG Jiangsu JieJie Microelectronics Co Ltd	1	30V, 199A, 1.9mΩ N-channel Power SGT MOSFET in PDFN5x6-8L package with low gate charge, 100% UIS tested, suitable for load switch and power management applications.	JMSL0302PG	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0610AGD Jiangsu JieJie Microelectronics Co Ltd	1	Dual N-Ch Power MOSFET with 60 V drain-source voltage, 35 A continuous drain current, 8.5 mΩ typical RDS(ON) at VGS = 10V, and 10.2 mΩ at VGS = 4.5V in a PDFN5x6-8L-D package.	JMSL0610AGD	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0604AG Jiangsu JieJie Microelectronics Co Ltd	1	60 V N-channel Power MOSFET in PDFN5x6-8L package with 3.9 mΩ typical RDS(ON) at VGS = 10 V, 98 A continuous drain current, low gate charge, and 1.78 Ω gate resistance.	JMSL0604AG	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0402AKQ Jiangsu JieJie Microelectronics Co Ltd	1	40V N-channel Power MOSFET in TO-252-3L package with 1.9 mΩ RDS(ON) at VGS = 10V, 211A continuous drain current, low gate charge, and AEC-Q101 qualification for automotive applications.	JMSL0402AKQ	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0604AGQ Jiangsu JieJie Microelectronics Co Ltd	1	60V N-channel Power MOSFET in PDFN5x6-8L package with 3.6 mΩ typical RDS(ON) at 10V VGS, 112A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications.	JMSL0604AGQ	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0601AG Jiangsu JieJie Microelectronics Co Ltd	1	60V N-channel Power MOSFET in PDFN5x6-8L package with 0.90 mΩ typical RDS(ON) at 10V VGS, 275A continuous drain current, low gate charge, and 100% UIS tested for power management and switching applications.	JMSL0601AG	3D model not available Symbol and footprint not available 0	0 Build or Request

	JMSL0609AU Jiangsu JieJie Microelectronics Co Ltd	1	60 V N-channel Power MOSFET in PDFN3x3-8L package with 7.5 mΩ typical RDS(ON) at 10 V VGS, 41 A continuous drain current, low gate charge, and 100% UIS tested for power management and switching applications.	JMSL0609AU	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0630AG Jiangsu JieJie Microelectronics Co Ltd	1	60V 22mΩ N-Ch Power MOSFET in PDFN5x6-8L package with 25A continuous drain current, low gate charge, and 100% UIS tested, suitable for power management, motor driving, and switching applications.	JMSL0630AG	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0630AGD Jiangsu JieJie Microelectronics Co Ltd	1	60V dual N-channel power MOSFET with 22 mΩ RDS(ON) at 10V VGS, 28 mΩ at 4.5V VGS, 23A continuous drain current, and 5.8nC gate charge in a PDFN5x6-8L-D package.	JMSL0630AGD	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0603AK Jiangsu JieJie Microelectronics Co Ltd	1	60V 2.6mΩ N-Ch Power MOSFET in TO-252-3L package with 145A continuous drain current, low gate charge, and ultra-low RDS(ON), suitable for power management, motor driving, and switching applications.	JMSL0603AK	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0609AKQ Jiangsu JieJie Microelectronics Co Ltd	1	60V N-channel Power MOSFET in TO-252-3L package with 7.4 mΩ typical RDS(ON) at 10V VGS, 59A continuous drain current, low gate charge, and AEC-Q101 qualification for automotive applications.	JMSL0609AKQ	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0615AP Jiangsu JieJie Microelectronics Co Ltd	1	60V N-channel Power MOSFET in SOP-8L package with 10 mΩ typical RDS(ON) at VGS = 10V, 12.7A continuous drain current, low gate charge, and designed for power management and switching applications.	JMSL0615AP	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0615AV Jiangsu JieJie Microelectronics Co Ltd	1	60 V N-channel Power MOSFET in U-DFN2020-6L package with 9.8 mΩ RDS(ON) at 10 V VGS, 21 A continuous drain current, and low gate charge for power management applications.	JMSL0615AV	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0315APD Jiangsu JieJie Microelectronics Co Ltd	1	30 V dual N-channel power MOSFET in SOP-8L package with 9.5 mΩ typical RDS(ON) at 10 V VGS, 12.4 A continuous drain current, low gate charge, and 100% UIS tested for motor driving and power management applications.	JMSL0315APD	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0606AGQ Jiangsu JieJie Microelectronics Co Ltd	1	60 V N-Ch Power MOSFET with 4.0 mΩ RDS(ON) at VGS = 10V, 5.2 mΩ at VGS = 4.5V, 103 A continuous drain current, in PDFN5x6-8L package, AEC-Q101 qualified for automotive applications.	JMSL0606AGQ	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0620AGDEQ Jiangsu JieJie Microelectronics Co Ltd	1	60 V, 23 A dual N-channel power MOSFET in PDFN5x6-8L-D package with typical RDS(ON) of 18 mΩ at VGS = 10 V and 25 mΩ at VGS = 4.5 V, featuring low gate charge and AEC-Q101 qualification for automotive applications.	JMSL0620AGDEQ	3D model not available Symbol and footprint not available 0	0 Build or Request
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