LDT-M Model Download Search Results
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MJE13003DL-D-TM3-T
Unisonic Technologies Co Ltd
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1 | Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic/Epoxy, 3 Pin | MJE13003DL-D-TM3-T |
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2SD669AL-D-TM3-A-T
Unisonic Technologies Co Ltd
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1 | Small Signal Bipolar Transistor | 2SD669AL-D-TM3-A-T |
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2SA1700L-D-TM3-T
Unisonic Technologies Co Ltd
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1 | Small Signal Bipolar Transistor, 0.2A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-251 | 2SA1700L-D-TM3-T |
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13005ECL-D-TM3-T
Unisonic Technologies Co Ltd
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1 | Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic/Epoxy, 3 Pin | 13005ECL-D-TM3-T |
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4N50L-MLD-TM3-T
Unisonic Technologies Co Ltd
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1 | Power Field-Effect Transistor, 4A I(D), 500V, 2.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 4N50L-MLD-TM3-T |
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2SD669AL-D-TM3-T
Unisonic Technologies Co Ltd
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1 | Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic/Epoxy, 3 Pin | 2SD669AL-D-TM3-T |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to251_3.jpg"])
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