LML6- Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IRLML6401GTRPBF VBsemi Electronics Co Ltd	1	P-Channel 20-V, 5-A MOSFET in SOT-23 package with RDS(on) of 35 mΩ at VGS = -10 V, designed for load switch, PA switch, and DC/DC converter applications.	IRLML6401GTRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6402GTRPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6402GTRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6346TRPBF International Rectifier	1	Power Field-Effect Transistor, 3.4A I(D), 30V, 0.063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6346TRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6402TRPBF International Rectifier	1	Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6402TRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRLML6246TRPBF International Rectifier	1	Power Field-Effect Transistor, 4.1A I(D), 20V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6246TRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6244TRPBF International Rectifier	1	Power Field-Effect Transistor, 6.3A I(D), 20V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6244TRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6302 Infineon Technologies AG	1	Small Signal Field-Effect Transistor, 0.54A I(D), 1-Element	IRLML6302	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6344 Shenzhen Heketai Electronics Co Ltd	1	N-channel Power MOSFET in SOT-23 package with 30V drain-source voltage, 5A continuous drain current, and on-resistance of 29mΩ at 4.5V gate-source voltage.	IRLML6344	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6401TRPBF-1 Infineon Technologies AG	1	Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6401TRPBF-1	3D model not available Symbol and footprint not available 0	0 Build or Request
	CBL10K-10LML60 TE Connectivity	1	Interconnection Device	CBL10K-10LML60	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6402TRPBF-1 International Rectifier	1	Power Field-Effect Transistor	IRLML6402TRPBF-1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6401TR CYT Opto-electronic	1	Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6401TR	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6302GTRPBF Infineon Technologies AG	1	Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6302GTRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6402TR International Rectifier	1	Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6402TR	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6302PBF International Rectifier	1	Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6302PBF	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRLML6401PBF International Rectifier	1	Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6401PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6401 International Rectifier	1	Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6401	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6401 Shenzhen Heketai Electronics Co Ltd	1	P-channel MOSFET with -30V drain-source voltage, -4A continuous drain current, and 52mΩ on-resistance at VGS=-10V, suitable for PWM and load switch applications in SOT-23 package.	IRLML6401	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6302TRPBF-1 Infineon Technologies AG	1	Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6302TRPBF-1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6402GPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6402GPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	LML-647.0BF-XX Laser Components USA Inc	1	Laser Diode Emitter	LML-647.0BF-XX	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6401TR International Rectifier	1	Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6401TR	3D model not available Symbol and footprint not available 0	0 Build or Request
	LC-LML-635-01-03-A-C Laser Components USA Inc	1	Fiber Optic Emitter	LC-LML-635-01-03-A-C	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6302TRPBF International Rectifier	1	Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6302TRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6346 Shenzhen Heketai Electronics Co Ltd	1	N-Channel Power MOSFET in SOT-23 package with 30V drain-source voltage, ultralow on-resistance of 63mΩ at 4.5V gate voltage, suitable for PWM and load switch applications.	IRLML6346	3D model not available Symbol and footprint not available 0	0 Build or Request
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