MJD11 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	MJD117(TO-252) Jiangsu Changjiang Electronics Technology Co Ltd	1	Transistor	MJD117(TO-252)	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD112L KEC	1	Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin	MJD112L	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD117I Fairchild Semiconductor Corporation	1	Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin	MJD117I	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD112(TO-251) Jiangsu Changjiang Electronics Technology Co Ltd	1	Small Signal Bipolar Transistor, 2A I(C), 1-Element, NPN	MJD112(TO-251)	3D model not available Symbol and footprint not available 0	0 Build or Request

	MJD117TF Fairchild Semiconductor Corporation	1	Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin	MJD117TF	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD117-I onsemi	1	Power Bipolar Transistor	MJD117-I	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD112 Jiangsu Changjiang Electronics Technology Co Ltd	1	Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 2-Element, NPN, Silicon, TO-252	MJD112	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD112TF Rochester Electronics LLC	1	2A, 100V, NPN, Si, POWER TRANSISTOR, TO-252, DPAK-3	MJD112TF	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD112-T1 Samsung Semiconductor	1	Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin	MJD112-T1	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD112G onsemi	1	Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix); High DC Current Gain hFE = 2,500 (Typ) @ IC = 2.0 Adc; Monolithic Construction With Built-in Base-Emitter Shunt Resistors; Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("1" Suffix); Surface Mount Replacements for TIP110-TIP117 Series; Complementary Pairs Simplifies Designs; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-	MJD112G	3D model available Symbol and footprint not available 1	1 Download Model
	MJD112-BP Micro Commercial Components	1	Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon	MJD112-BP	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD117 Fairchild Semiconductor Corporation	1	Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin	MJD117	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD117 onsemi	1	Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin	MJD117	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD117G Galaxy Microelectronics	1	Power Bipolar Transistor	MJD117G	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD112-001G onsemi	1	Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin	MJD112-001G	3D model not available Symbol and footprint not available 0	0 Build or Request

	MJD112T4 Motorola Semiconductor Products	1	Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin	MJD112T4	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD112-TP-HF Micro Commercial Components	1	Small Signal Bipolar Transistor	MJD112-TP-HF	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD117 JCET Group	1	PNP transistor in TO-252-2L package with -100 V collector-base and collector-emitter voltage, -2 A collector current, 1.75 W power dissipation, and high DC current gain up to 12000 at -2 A.	MJD117	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD112 Galaxy Microelectronics	1	Power Bipolar Transistor	MJD112	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD117-T1 Samsung Semiconductor	1	Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin	MJD117-T1	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD112 Galaxy Semi-Conductor Co Ltd	1	Power Bipolar Transistor,	MJD112	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD117-TP Micro Commercial Components	1	Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO	MJD117-TP	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD112-I Fairchild Semiconductor Corporation	1	2 A, 100 V, NPN, Si, POWER TRANSISTOR, IPAK-3	MJD112-I	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD117RLG onsemi	1	Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin	MJD117RLG	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD117TF onsemi	1	Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin	MJD117TF	3D model not available Symbol and footprint not available 0	0 Build or Request
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