MJD44H11 Model Download Search Results
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MJD44H11TM_NL
Fairchild Semiconductor Corporation
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1 | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin | MJD44H11TM_NL |
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MJD44H11-1G
Rochester Electronics LLC
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1 | 8A, 80V, NPN, Si, POWER TRANSISTOR, ROHS COMPLIANT, DPAK-3 | MJD44H11-1G |
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MJD44H11TF
Fairchild Semiconductor Corporation
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1 | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin | MJD44H11TF |
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MJD44H11TF
onsemi
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1 | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin | MJD44H11TF |
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MJD44H11-1
Samsung Semiconductor
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1 | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin | MJD44H11-1 |
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NJVMJD44H11D3T4G
onsemi
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1 | Power Bipolar Transistor | NJVMJD44H11D3T4G |
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NJVMJD44H11RLG
onsemi
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1 | Complementary Pairs Simplifies Designs; Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes; Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("-1" Suffix); Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix); Electrically Similar to Popular D44H/D45H Series; Fast Switching Speeds; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 | NJVMJD44H11RLG |
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NJVMJD44H11T4G-VF01
onsemi
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1 | Bipolar (BJT) Transistor NPN 80 V 8 A 85MHz 1.75 W Surface Mount DPAK | NJVMJD44H11T4G-VF01 |
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NJVMJD44H11T4G
onsemi
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1 | Complementary Pairs Simplifies Designs; Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes; Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("-1" Suffix); Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix); Electrically Similar to Popular D44H/D45H Series; Fast Switching Speeds; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 | NJVMJD44H11T4G |
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934660546118
Nexperia
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1 | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin | 934660546118 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to252_3.jpg"])
![Part Image](["https://componentsearchengine.com/graphics/no-image.png",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/NJVMJD44H11T4G-VF01.jpg",null,null])
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