MN10A Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	ZXMN10A25K Shenzhen Heketai Electronics Co Ltd	1	N-channel high-voltage MOSFET with 100V drain-source voltage, 125mΩ on-resistance at 10V gate voltage, 6.4A continuous drain current, and surface mount TO-252 package.	ZXMN10A25K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCP382LMN10AATXG onsemi	1	LOAD SWITCH, Fixed, 2 Channel, PDSO8	NCP382LMN10AATXG	3D model not available Symbol and footprint not available 0	0 Build or Request
	ZXMN10A25KTC Zetex / Diodes Inc	1	Power Field-Effect Transistor, 4.2A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	ZXMN10A25KTC	3D model not available Symbol and footprint not available 0	0 Build or Request
	ZXMN10A11KTC Diodes Incorporated	1	Power Field-Effect Transistor, 2.4A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	ZXMN10A11KTC	3D model not available Symbol and footprint not available 0	0 Build or Request

	UZXMN10A08DN8TA Diodes Incorporated	1	Power Field-Effect Transistor, 2.1A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	UZXMN10A08DN8TA	3D model not available Symbol and footprint not available 0	0 Build or Request
	ZXMN10A09KTC Zetex / Diodes Inc	1	Power Field-Effect Transistor, 5A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA	ZXMN10A09KTC	3D model not available Symbol and footprint not available 0	0 Build or Request
	UZXMN10A08DN8TC Zetex / Diodes Inc	1	Power Field-Effect Transistor, 2.1A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	UZXMN10A08DN8TC	3D model not available Symbol and footprint not available 0	0 Build or Request
	UZXMN10A07FTC Diodes Incorporated	1	Small Signal Field-Effect Transistor, 0.7A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	UZXMN10A07FTC	3D model not available Symbol and footprint not available 0	0 Build or Request
	UZXMN10A11GFTC Zetex / Diodes Inc	1	Small Signal Field-Effect Transistor, 1.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	UZXMN10A11GFTC	3D model not available Symbol and footprint not available 0	0 Build or Request
	ZXMN10A11KTC Zetex / Diodes Inc	1	Power Field-Effect Transistor, 2.4A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	ZXMN10A11KTC	3D model not available Symbol and footprint not available 0	0 Build or Request
	ZXMN10A08DN8TC Diodes Incorporated	1	Power Field-Effect Transistor, 1.6A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	ZXMN10A08DN8TC	3D model not available Symbol and footprint not available 0	0 Build or Request
	ZXMN10A08E6TC Diodes Incorporated	1	Small Signal Field-Effect Transistor, 3.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	ZXMN10A08E6TC	3D model not available Symbol and footprint not available 0	0 Build or Request
	ZXMN10A25GTA Zetex / Diodes Inc	1	Power Field-Effect Transistor, 2.9A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA	ZXMN10A25GTA	3D model not available Symbol and footprint not available 0	0 Build or Request
	TCB1002226MN10A0150 Matsuo Electric Co Ltd	1	CAPACITOR, TANTALUM, SOLID POLYMER, POLARIZED, 10V, 22uF, SURFACE MOUNT, 1206, CHIP, ROHS COMPLIANT	TCB1002226MN10A0150	3D model not available Symbol and footprint not available 0	0 Build or Request
	ZXMN10A09KTC Diodes Incorporated	1	Power Field-Effect Transistor, 5A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA	ZXMN10A09KTC	3D model not available Symbol and footprint not available 0	0 Build or Request

	ZXMN10A07FTA Zetex / Diodes Inc	1	Small Signal Field-Effect Transistor, 0.7A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	ZXMN10A07FTA	3D model not available Symbol and footprint not available 0	0 Build or Request
	UZXMN10A08DN8TC Diodes Incorporated	1	Power Field-Effect Transistor, 2.1A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	UZXMN10A08DN8TC	3D model not available Symbol and footprint not available 0	0 Build or Request
	ZXMN10A11GTC Diodes Incorporated	1	Power Field-Effect Transistor, 1.9A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	ZXMN10A11GTC	3D model not available Symbol and footprint not available 0	0 Build or Request
	UZXMN10A11GFTA Zetex / Diodes Inc	1	Small Signal Field-Effect Transistor, 1.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	UZXMN10A11GFTA	3D model not available Symbol and footprint not available 0	0 Build or Request
	UZXMN10A09KTC Diodes Incorporated	1	Power Field-Effect Transistor, 5A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA	UZXMN10A09KTC	3D model not available Symbol and footprint not available 0	0 Build or Request
	ZXMN10A11K Shenzhen Heketai Electronics Co Ltd	1	N-channel high voltage MOSFET with 100 V drain-source voltage, 3.5 A continuous drain current, and 350 mΩ on-resistance at 10 V gate-source voltage, housed in a surface mount TO-252 package.	ZXMN10A11K	3D model not available Symbol and footprint not available 0	0 Build or Request
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