NCE30 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	NCE3013J NCEPOWER	1	NCE3013J N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 13A continuous drain current, 12mΩ RDS(ON) at VGS=10V, and 20mΩ RDS(ON) at VGS=4.5V, housed in a DFN2X2-6L package.	NCE3013J	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30H12AK NCEPOWER	1	NCE30H12AK is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 120A continuous drain current, and low on-resistance of 2.7mΩ at 10V gate-source voltage, utilizing advanced trench technology for high efficiency in power switching applications.	NCE30H12AK	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3080K NCEPOWER	1	NCE3080K is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 80A continuous drain current, and low on-state resistance of 4.5mΩ at 10V gate voltage, using advanced trench technology for high efficiency switching applications.	NCE3080K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3095G NCEPOWER	1	NCE3095G is a 30V, 95A DFN5x6-8L packaged MOSFET with advanced trench technology, offering low RDS(ON) of 3.5mΩ at VGS=10V, suitable for high-frequency switching and DC/DC conversion applications.	NCE3095G	3D model not available Symbol and footprint not available 0	0 Build or Request

	NCE3025G NCEPOWER	1	NCE3025G N-channel enhancement mode MOSFET with 30V drain-source voltage, 25A continuous drain current, RDS(ON) less than 10mΩ at VGS=10V, advanced trench technology for low on-resistance and high efficiency in power switching applications.	NCE3025G	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30NP07S NCEPOWER	1	NCE30NP07S is a complementary N and P-channel enhancement mode power MOSFET in SOP-8 package, with 30V VDS, 6.5A ID for N-channel, -7A ID for P-channel, low RDS(ON), and advanced trench technology for high efficiency.	NCE30NP07S	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30H10G NCEPOWER	1	NCE30H10G is an N-channel enhancement mode power MOSFET with 30V drain-source voltage, 100A continuous drain current, and low on-resistance of 1.9mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications.	NCE30H10G	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30P30K NCEPOWER	1	NCE30P30K is a -30V, -30A trench MOSFET with low RDS(ON) of 18mΩ at VGS=-10V, advanced gate charge characteristics, and high current capability in a TO-252-2L package.	NCE30P30K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3068Q NCEPOWER	1	NCE3068Q is a 30V, 68A N-channel enhancement mode power MOSFET in a PDFN3.3x3.3-8L package, featuring low RDS(ON) of 3.5 mΩ at VGS = 10V and high operating temperature up to 150°C.	NCE3068Q	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3080KA NCEPOWER	1	NCE3080KA is an N-channel enhancement mode power MOSFET with 30V drain-source voltage, 80A continuous drain current, and low on-resistance of 6.5mΩ at 10V gate-source voltage, suitable for high-frequency switching applications.	NCE3080KA	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3050I NCEPOWER	1	NCE3050I N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 50A continuous drain current, RDS(ON) less than 11mΩ at VGS=10V, and low gate charge, suitable for power switching and high frequency applications.	NCE3050I	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3095K NCEPOWER	1	NCE3095K is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 95A continuous drain current, and low on-resistance of 4.4mΩ at 10V gate-source voltage, suitable for power switching and high-frequency applications.	NCE3095K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30H28 NCEPOWER	1	NCE30H28 is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 280A continuous drain current, and low on-resistance of 1.5mΩ at 10V gate-source voltage, suitable for high-frequency switching applications.	NCE30H28	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3020Q NCEPOWER	1	NCE3020Q is a 30V, 20A N-channel enhancement mode power MOSFET with low RDS(ON) of 8mΩ at VGS=10V, advanced trench technology, high ESD capability, and 100% UIS tested for reliable power switching applications.	NCE3020Q	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30P15S NCEPOWER	1	NCE30P15S is a -30V, -15A channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of less than 10mΩ at VGS=-10V, suitable for load switch and PWM applications in surface mount package.	NCE30P15S	3D model not available Symbol and footprint not available 0	0 Build or Request

	NCE30H15K NCEPOWER	1	NCE30H15K is a channel enhancement mode power MOSFET with 30V drain-source voltage, 150A continuous drain current, and low on-resistance of 4.0mΩ at VGS=10V, using advanced trench technology for high efficiency in switching applications.	NCE30H15K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3065Q NCEPOWER	1	NCE3065Q is a 30V, 65A N-channel enhancement mode power MOSFET with 4.2mΩ typical RDS(ON) at VGS=10V, housed in a DFN3.3x3.3-8L package, designed for high-frequency switching and DC/DC conversion applications.	NCE3065Q	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30P30G NCEPOWER	1	NCE30P30G is a -30V, -30A trench technology power MOSFET with low RDS(ON) of less than 10mΩ at VGS=-10V, suitable for load switch and PWM applications in a surface mount DFN5x6-8L package.	NCE30P30G	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3025Q NCEPOWER	1	NCE3025Q is a 30V, 25A N-channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of less than 10mΩ at VGS=10V and low gate charge for high efficiency in switching applications.	NCE3025Q	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30H12K NCEPOWER	1	NCE30H12K is an N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 120A continuous drain current, and low on-resistance of 4.5mΩ maximum at 10V gate-source voltage, utilizing advanced trench technology for high efficiency and thermal performance.	NCE30H12K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30P60G NCEPOWER	1	NCE30P60G is a P-channel enhancement mode power MOSFET with -30V drain-source voltage, -60A continuous drain current, and low on-resistance of 4.1mΩ at VGS=-10V, utilizing advanced trench technology for high efficiency and thermal performance.	NCE30P60G	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30P25S NCEPOWER	1	NCE30P25S is a -30V, -25A P-channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of less than 9mΩ at VGS=-10V and less than 14mΩ at VGS=-4.5V, suitable for power management and load switch applications in surface mount SOP-8 package.	NCE30P25S	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30P55L NCEPOWER	1	NCE30P55L is a P-Channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -55A continuous drain current, and low on-resistance of 8.5mΩ at VGS=-10V, suitable for high current load applications.	NCE30P55L	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3080L NCEPOWER	1	NCE3080L is an N-channel enhancement mode power MOSFET with 30V drain-source voltage, 80A continuous drain current, and low on-resistance of 6.5mΩ at 10V gate-source voltage, suitable for high-frequency switching applications.	NCE3080L	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30NP4030G NCEPOWER	1	NCE30NP4030G complementary power MOSFET with 30V N-channel and -30V P-channel, RDS(ON) <9.5mΩ and <11mΩ respectively, advanced trench technology, surface mount DFN5X6-8L package for high power applications.	NCE30NP4030G	3D model not available Symbol and footprint not available 0	0 Build or Request
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