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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	NCE6007S NCEPOWER	1	NCE6007S N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 7A continuous drain current, 24mΩ typical RDS(ON) at VGS=10V, and low gate charge, suitable for power switching and high-frequency applications.	NCE6007S	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6050A NCEPOWER	1	NCE6050A is a channel enhancement mode power MOSFET with 60V drain-source voltage, 50A continuous drain current, and low on-resistance of 13.8mΩ at VGS=10V, suitable for high-frequency switching applications.	NCE6050A	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6025Q NCEPOWER	1	NCE6025Q is a 60V, 25A N-channel enhancement mode power MOSFET with RDS(ON) less than 14mΩ at VGS=10V, featuring high cell density design, low gate charge, and DFN3.3x3.3-8L package for efficient heat dissipation.	NCE6025Q	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6058 NCEPOWER	1	NCE6058 N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 58A continuous drain current, and 13mΩ typical RDS(ON) at 10V VGS, utilizing trench technology for low gate charge and high efficiency in power switching applications.	NCE6058	3D model not available Symbol and footprint not available 0	0 Build or Request

	NCE6050KA NCEPOWER	1	NCE6050KA is a channel enhancement mode power MOSFET with 60V drain-source voltage, 50A continuous drain current, and low on-resistance of 13.8mΩ at VGS=10V, utilizing advanced trench technology for high efficiency in switching applications.	NCE6050KA	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6058AK NCEPOWER	1	60V, 58A NCE6058AK N-channel enhancement mode power MOSFET with trench technology, offering low RDS(ON) of 8mΩ at VGS=10V, high current capability, and optimized gate charge for switching applications.	NCE6058AK	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P82A NCEPOWER	1	NCE60P82A is a -60V, -82A channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of less than 13mΩ at VGS=-10V and low gate charge, suitable for high current load switching applications.	NCE60P82A	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P50 NCEPOWER	1	NCE60P50 is a P-channel enhancement mode power MOSFET with -60V drain-source voltage, -50A continuous drain current, and low on-resistance of 23mΩ at VGS=-10V, utilizing advanced trench technology for high efficiency in load switch applications.	NCE60P50	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6080AK NCEPOWER	1	60V, 80A NCE6080AK N-channel enhancement mode power MOSFET with trench technology, offering 6 mΩ typical RDS(ON) at VGS = 10V, low gate charge, and high current capability in a TO-252-2L package.	NCE6080AK	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6012CS NCEPOWER	1	NCE6012CS N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 12A continuous drain current, and 9mΩ typical RDS(ON) at 10V gate-source voltage, housed in SOP-8 package.	NCE6012CS	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P09S NCEPOWER	1	NCE60P09S is a -60V, -9A channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 32mΩ at VGS=-10V and low gate charge, suitable for high-frequency switching applications.	NCE60P09S	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE603S NCEPOWER	1	NCE603S is a complementary MOSFET with N-channel and P-channel configuration, featuring 60V drain-source voltage, 5A continuous drain current, low RDS(ON) of 28mΩ (N-channel) and 80mΩ (P-channel), and high ESD capability in SOP-8 package.	NCE603S	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60ND45XG NCEPOWER	1	NCE60ND45XG is a 60V, 45A N-channel enhancement mode power MOSFET with trench technology, offering low RDS(ON) of 9.4 mΩ at VGS = 10V and low gate charge for efficient switching performance in power applications.	NCE60ND45XG	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6020AI NCEPOWER	1	NCE6020AI is a 60V, 20A channel enhancement mode power MOSFET with RDS(ON) less than 25mΩ at VGS=10V, designed using advanced trench technology for low gate charge and high switching efficiency in power applications.	NCE6020AI	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6020AK NCEPOWER	1	NCE6020AK is a channel enhancement mode power MOSFET with 60V drain-source voltage, 20A continuous drain current, and low on-resistance of less than 35mΩ at VGS=10V, using advanced trench technology for high efficiency in switching applications.	NCE6020AK	3D model not available Symbol and footprint not available 0	0 Build or Request

	NCE6005AS NCEPOWER	1	NCE6005AS is a channel enhancement mode power MOSFET with 60V drain-source voltage, 5A continuous drain current, and low on-resistance of 26mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications.	NCE6005AS	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6065AG NCEPOWER	1	60V, 65A NCE6065AG trench MOSFET with DFN5X6-8L package, featuring RDS(ON) less than 6.3mΩ at VGS=10V, low gate charge, and advanced design for high efficiency in load switching and PWM applications.	NCE6065AG	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6003M NCEPOWER	1	NCE6003M is an N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 3A continuous drain current, RDS(ON) less than 100mΩ at VGS=10V, and low gate charge, suitable for battery protection and switching applications.	NCE6003M	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60NP1515K NCEPOWER	1	NCE60NP1515K is a complementary N and P channel MOSFET with 60V VDS, ±15A ID, RDS(ON) <70mΩ at 10V VGS for N channel and <65mΩ at -10V VGS for P channel, suitable for H-bridge and inverter applications.	NCE60NP1515K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60H10 NCEPOWER	1	NCE60H10 is a 60V, 100A N-channel enhancement mode power MOSFET with low RDS(ON) of 4.5mΩ at VGS=10V, designed for high-frequency switching, power conversion, and load switching applications.	NCE60H10	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6003XM NCEPOWER	1	NCE6003XM is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 3A continuous drain current, RDS(ON) less than 78mΩ at VGS=10V, and low gate charge, suitable for battery protection and switching applications.	NCE6003XM	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P82AK NCEPOWER	1	NCE60P82AK is a -60V, -82A P-channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 13mΩ at VGS=-10V and low gate charge, suitable for high current load switch applications.	NCE60P82AK	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60H10K NCEPOWER	1	60V, 100A NCE60H10K power MOSFET with advanced trench technology, offering low RDS(ON) of 4.5mΩ at VGS=10V, low gate charge, and high switching performance for power conversion and load switching applications.	NCE60H10K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6003Y NCEPOWER	1	NCE6003Y is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 3A continuous drain current, RDS(ON) less than 105mΩ at VGS=10V, and low gate charge, suitable for battery protection and switching applications.	NCE6003Y	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6080K NCEPOWER	1	NCE6080K is a 60V, 80A N-channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of less than 7 mΩ at VGS = 10V and high current capability in a TO-252-2L package.	NCE6080K	3D model not available Symbol and footprint not available 0	0 Build or Request
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