NE552 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	NE552R679A-T1A NEC Electronics Group	1	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET	NE552R679A-T1A	3D model not available Symbol and footprint not available 0	0 Build or Request
	NE5520379A-T1A NEC Compound Semiconductor Devices Ltd	1	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN	NE5520379A-T1A	3D model not available Symbol and footprint not available 0	0 Build or Request
	NE552R479A-A Renesas Electronics Corporation	1	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET	NE552R479A-A	3D model not available Symbol and footprint not available 0	0 Build or Request
	NE552R479A-T1A-A NEC Electronics Group	1	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET	NE552R479A-T1A-A	3D model not available Symbol and footprint not available 0	0 Build or Request

	NE5520379A-T1A NEC Electronics Group	1	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET	NE5520379A-T1A	3D model not available Symbol and footprint not available 0	0 Build or Request
	NE55261K+/-.5% Vishay Intertechnologies	1	Fixed Resistor, Metal Film, 0.25W, 261000ohm, 250V, 0.5% +/-Tol, -25,25ppm/Cel,	NE55261K+/-.5%	3D model not available Symbol and footprint not available 0	0 Build or Request
	NE55210K+/-.5% Vishay Intertechnologies	1	Fixed Resistor, Metal Film, 0.25W, 210000ohm, 250V, 0.5% +/-Tol, 25ppm/Cel, Through Hole Mount	NE55210K+/-.5%	3D model not available Symbol and footprint not available 0	0 Build or Request
	NE552R679A NEC Electronics Group	1	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET	NE552R679A	3D model not available Symbol and footprint not available 0	0 Build or Request
	NE552R479A-T1 NEC Compound Semiconductor Devices Ltd	1	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET	NE552R479A-T1	3D model not available Symbol and footprint not available 0	0 Build or Request
	NE5520279A-T1A Renesas Electronics Corporation	1	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET	NE5520279A-T1A	3D model not available Symbol and footprint not available 0	0 Build or Request
	NE5520D NXP Semiconductors	1	Signal Conditioner, PDSO16	NE5520D	3D model not available Symbol and footprint not available 0	0 Build or Request
	NE552R479A-T1 Renesas Electronics Corporation	1	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET	NE552R479A-T1	3D model not available Symbol and footprint not available 0	0 Build or Request
	NE5520379A-T1A California Eastern Laboratories (CEL)	1	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET	NE5520379A-T1A	3D model not available Symbol and footprint not available 0	0 Build or Request
	NE55226K+/-.1% Vishay Intertechnologies	1	Fixed Resistor, Metal Film, 0.25W, 226000ohm, 250V, 0.1% +/-Tol, 25ppm/Cel, Through Hole Mount	NE55226K+/-.1%	3D model not available Symbol and footprint not available 0	0 Build or Request
	NE552R679A-T1A-A NEC Electronics Group	1	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET	NE552R679A-T1A-A	3D model not available Symbol and footprint not available 0	0 Build or Request

	NE5520N Ideal Semiconductor Inc	1	Signal Conditioner, Bipolar, PDIP14	NE5520N	3D model not available Symbol and footprint not available 0	0 Build or Request
	NE552R679A-T1A NEC Compound Semiconductor Devices Ltd	1	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET	NE552R679A-T1A	3D model not available Symbol and footprint not available 0	0 Build or Request
	NE5520279A-T1A NEC Electronics Group	1	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET	NE5520279A-T1A	3D model not available Symbol and footprint not available 0	0 Build or Request
	NE5521F NXP Semiconductors	1	Signal Conditioner, CDIP18	NE5521F	3D model not available Symbol and footprint not available 0	0 Build or Request
	NE5521D Philips Semiconductors	1	LVDT or RVDT to Digital Converter, Bipolar, PDSO16	NE5521D	3D model not available Symbol and footprint not available 0	0 Build or Request
	NE5520279A-T1A-A NEC Compound Semiconductor Devices Ltd	1	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET	NE5520279A-T1A-A	3D model not available Symbol and footprint not available 0	0 Build or Request
	NE5520N Signetics	0	Signal Conditioner, Bipolar, PDIP14	NE5520N	3D model not available Symbol and footprint not available 0	0 Build or Request
	NE55249K+/-.5% Vishay Intertechnologies	1	Fixed Resistor, Metal Film, 0.25W, 249000ohm, 250V, 0.5% +/-Tol, 25ppm/Cel, Through Hole Mount	NE55249K+/-.5%	3D model not available Symbol and footprint not available 0	0 Build or Request
	NE5520379A-A Renesas Electronics Corporation	1	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET	NE5520379A-A	3D model not available Symbol and footprint not available 0	0 Build or Request
	NE552R679A NEC Compound Semiconductor Devices Ltd	1	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET	NE552R679A	3D model not available Symbol and footprint not available 0	0 Build or Request
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