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14R-CBSA-1.5X1.5X0.13
Leader Tech Inc.
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1 | RF Shield Shield, 2-Piece 1.500" (38.10mm) X 1.500" (38.10mm) Non-Vented Through Hole | Other | 14R-CBSA-1.5X1.5X0.13 |
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53A-CBSA-1.5X2.5X0.5
Leader Tech Inc.
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1 | RF SHIELD 1.5" X 2.5" T/H | Other | 53A-CBSA-1.5X2.5X0.5 |
3
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2SA1576U3T106
ROHM Semiconductor
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1 | General Purpose Transistor (-50V, -150mA, RL | Other | 2SA1576U3T106 |
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2SA1587-BL
Toshiba
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1 | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process),Bipolar (BJT) Transistor PNP 120 V 100 mA 100MHz 100 mW Surface Mount SC-70 | Other | 2SA1587-BL |
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2SA1577T106
ROHM Semiconductor
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1 | PNP Driver Transistor: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market. | SOT23 (3-Pin) | 2SA1577T106 |
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2SA1576AT106S
ROHM Semiconductor
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1 | Bipolar Transistors - BJT PNP 50V 0.15A SOT-323 | SO Transistor Flat Lead | 2SA1576AT106S |
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2SA1576AT106R
ROHM Semiconductor
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1 | ROHM - 2SA1576AT106R - Bipolar (BJT) Single Transistor, PNP, -50 V, 140 MHz, 200 mW, -150 mA, 120 hFE | SOT23 (3-Pin) | 2SA1576AT106R |
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TPSA156M010S1000
Kyocera AVX
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1 | Tantalum Capacitors - Solid SMD 10V 15uF 20% 1206 ESR = 1000mOhm | Capacitor Moulded Polarised | TPSA156M010S1000 |
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DSA15IM200UC
LITTELFUSE
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1 | Schottky Diodes & Rectifiers Schottky Diode Gen 2 | Other | DSA15IM200UC |
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2SA1588-Y,LF
Toshiba
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1 | Bipolar Transistors - BJT Transistor for Low Freq. Amplification | Other | 2SA1588-Y,LF |
3
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DE21XSA150KA3BT02F
Murata Electronics
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1 | Capacitor 15pF ±10% DE2 D=6mm T=5mm F=7.5mm d=0.6mm | Other | DE21XSA150KA3BT02F |
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71256SA15TPG
Renesas Electronics
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1 | The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Dual-In-Line Packages | 71256SA15TPG |
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SA150CA-TP
MCC
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1 | 500WATTS TVS 5.0 to 170 VOLTS | Diodes, Axial Diameter Horizontal Mounting | SA150CA-TP |
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DLP0NSA150HL2B
Murata Electronics
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1 | DLP0NSA_L2B Series EMI Suppression Filter 15Ω at 100MHz 100mA 5V | Other | DLP0NSA150HL2B |
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71V3556SA150BQ
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA150BQ |
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71V3556SA150BGGI
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA150BGGI |
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6116SA15SOG8
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Small Outline Packages | 6116SA15SOG8 |
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71V016SA15YG
Renesas Electronics
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1 | The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Other | 71V016SA15YG |
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SA150CA-BP
MCC
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1 | 243V Clamp 2.1A Ipp Tvs Diode Through Hole DO-15 | Diodes, Axial Diameter Horizontal Mounting | SA150CA-BP |
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SA150A-BP
MCC
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1 | 243V Clamp 2.1A Ipp Tvs Diode Through Hole DO-15 | Diodes, Axial Diameter Horizontal Mounting | SA150A-BP |
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71V256SA15PZGI8
Renesas Electronics
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1 | The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. | Other | 71V256SA15PZGI8 |
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KPSA15-3R3
TDK
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1 | AC-DC Power Supplies, PCB Mount, Output: 9.9W, 3.3V, Convection | Other | KPSA15-3R3 |
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71V124SA15PHG
Renesas Electronics
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1 | The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. | Small Outline Packages | 71V124SA15PHG |
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71V124SA15YG
Renesas Electronics
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1 | The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. | Small Outline Packages | 71V124SA15YG |
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71V124SA15TYG8
Renesas Electronics
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1 | The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. | Other | 71V124SA15TYG8 |
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