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Image Part Number D.S Description Package Category Prices / Stock Model Action
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SA150 YAGEO Corporation
1 Trans Voltage Suppressor Diode, 150V V(RWM), Unidirectional SA150 0 Build or Request
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SA150 Formosa Microsemi Co Ltd
1 Trans Voltage Suppressor Diode, 500W, 150V V(RWM), Unidirectional, 1 Element, Silicon, DO-15 SA150 0 Build or Request
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SA150 DB Lectro Inc
1 Transient Suppressor SA150 0 Build or Request
Part Image Part Image 1 500WATTS TVS 5.0 to 170 VOLTS Diodes, Axial Diameter Horizontal Mounting SA150CA-TP 1 Download Model
Part Image Part Image 1 243V Clamp 2.1A Ipp Tvs Diode Through Hole DO-15 Diodes, Axial Diameter Horizontal Mounting SA150A-TP 1 Download Model
Part Image Part Image 1 500WATTS TVS 5.0 to 170 VOLTS Diodes, Axial Diameter Horizontal Mounting SA150A-AP 1 Download Model
Part Image Part Image 1 243V Clamp 2.1A Ipp Tvs Diode Through Hole DO-15 Diodes, Axial Diameter Horizontal Mounting SA150A-BP 1 Download Model
Part Image Part Image 1 243V Clamp 2.1A Ipp Tvs Diode Through Hole DO-15 Diodes, Axial Diameter Horizontal Mounting SA150CA-BP 1 Download Model
Part Image Part Image 1 243V Clamp 2.1A Ipp Tvs Diode Through Hole DO-15 Diodes, Axial Diameter Horizontal Mounting SA150CA-AP 1 Download Model
Part Image Part Image 1 2SA1507 / 2SC3902 PNP / NPN Epitaxial Planar Silicon Transistors Other 2SA1507T 1 Download Model
Part Image Part Image 1 Automotive Grade Slow Blow SMD Fuses Fuses Chip SF-0603SA150M-2 1 Download Model
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6116SA150DB Renesas Electronics
1 The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. Dual-In-Line Packages 6116SA150DB 1 Download Model
Part Image Part Image 1 Surface Mount Fuses 15A 32V TIME DELAYSlow blow fusing speednt EIA 1206 (3216 metric) footprintnt AEC-Q200 compliant*nt UL 248-14 listednt RoHS compliant** and halogen free** Fuses Chip SF-1206SA1500W-2 1 Download Model
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71V3556SA150BQ8 Renesas Electronics
1 The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. BGA 71V3556SA150BQ8 1 Download Model
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71V3556SA150BGGI8 Renesas Electronics
1 The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. BGA 71V3556SA150BGGI8 1 Download Model
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71V3556SA150BGG Renesas Electronics
1 The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. BGA 71V3556SA150BGG 1 Download Model
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71V3556SA150BG8 Renesas Electronics
1 The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. BGA 71V3556SA150BG8 1 Download Model
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6116SA150TDB Renesas Electronics
1 The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. Ceramic Dual-In-Line Packages 6116SA150TDB 1 Download Model
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DE21XSA150KA3BT02F Murata Electronics
1 Capacitor 15pF ±10% DE2 D=6mm T=5mm F=7.5mm d=0.6mm Other DE21XSA150KA3BT02F 1 Download Model
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71V3556SA150BGG8 Renesas Electronics
1 The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. BGA 71V3556SA150BGG8 1 Download Model
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DLP0QSA150HL2D Murata Electronics
1 DLP0QSA_L2D Series EMI Suppression Filter 15Ω at 100MHz 100mA 5V Other DLP0QSA150HL2D 1 Download Model
Part Image Part Image 1 1206 slow-blow met-foil. 15A Auto Other SF-1206SA1500R-2 1 Download Model
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71V3556SA150BG Renesas Electronics
1 The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. BGA 71V3556SA150BG 1 Download Model
Part Image Part Image 1 MOSFETs OptiMOS Dual power MOSFET 30V Small Outline Packages ISA150233C03LMDSXTMA1 1 Download Model
Part Image Part Image 1 Automotive Grade Slow Blow SMD Fuses, 1206 Fuses Chip SF-1206SA150M-2 1 Download Model
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