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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SA150
YAGEO Corporation
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1 | Trans Voltage Suppressor Diode, 150V V(RWM), Unidirectional | SA150 |
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SA150
Formosa Microsemi Co Ltd
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1 | Trans Voltage Suppressor Diode, 500W, 150V V(RWM), Unidirectional, 1 Element, Silicon, DO-15 | SA150 |
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SA150
DB Lectro Inc
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1 | Transient Suppressor | SA150 |
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SA150CA-TP
MCC
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1 | 500WATTS TVS 5.0 to 170 VOLTS | Diodes, Axial Diameter Horizontal Mounting | SA150CA-TP |
3
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SA150A-TP
MCC
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1 | 243V Clamp 2.1A Ipp Tvs Diode Through Hole DO-15 | Diodes, Axial Diameter Horizontal Mounting | SA150A-TP |
3
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SA150A-AP
MCC
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1 | 500WATTS TVS 5.0 to 170 VOLTS | Diodes, Axial Diameter Horizontal Mounting | SA150A-AP |
3
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SA150A-BP
MCC
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1 | 243V Clamp 2.1A Ipp Tvs Diode Through Hole DO-15 | Diodes, Axial Diameter Horizontal Mounting | SA150A-BP |
3
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SA150CA-BP
MCC
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1 | 243V Clamp 2.1A Ipp Tvs Diode Through Hole DO-15 | Diodes, Axial Diameter Horizontal Mounting | SA150CA-BP |
3
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SA150CA-AP
MCC
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1 | 243V Clamp 2.1A Ipp Tvs Diode Through Hole DO-15 | Diodes, Axial Diameter Horizontal Mounting | SA150CA-AP |
3
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2SA1507T
Sanyo
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1 | 2SA1507 / 2SC3902 PNP / NPN Epitaxial Planar Silicon Transistors | Other | 2SA1507T |
3
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SF-0603SA150M-2
Bourns
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1 | Automotive Grade Slow Blow SMD Fuses | Fuses Chip | SF-0603SA150M-2 |
3
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6116SA150DB
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Dual-In-Line Packages | 6116SA150DB |
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SF-1206SA1500W-2
Bourns
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1 | Surface Mount Fuses 15A 32V TIME DELAYSlow blow fusing speednt EIA 1206 (3216 metric) footprintnt AEC-Q200 compliant*nt UL 248-14 listednt RoHS compliant** and halogen free** | Fuses Chip | SF-1206SA1500W-2 |
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71V3556SA150BQ8
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA150BQ8 |
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71V3556SA150BGGI8
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA150BGGI8 |
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71V3556SA150BGG
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA150BGG |
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71V3556SA150BG8
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA150BG8 |
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6116SA150TDB
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Ceramic Dual-In-Line Packages | 6116SA150TDB |
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DE21XSA150KA3BT02F
Murata Electronics
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1 | Capacitor 15pF ±10% DE2 D=6mm T=5mm F=7.5mm d=0.6mm | Other | DE21XSA150KA3BT02F |
3
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71V3556SA150BGG8
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA150BGG8 |
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DLP0QSA150HL2D
Murata Electronics
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1 | DLP0QSA_L2D Series EMI Suppression Filter 15Ω at 100MHz 100mA 5V | Other | DLP0QSA150HL2D |
3
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SF-1206SA1500R-2
Bourns
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1 | 1206 slow-blow met-foil. 15A Auto | Other | SF-1206SA1500R-2 |
2
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71V3556SA150BG
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA150BG |
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ISA150233C03LMDSXTMA1
Infineon
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1 | MOSFETs OptiMOS Dual power MOSFET 30V | Small Outline Packages | ISA150233C03LMDSXTMA1 |
3
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SF-1206SA150M-2
Bourns
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1 | Automotive Grade Slow Blow SMD Fuses, 1206 | Fuses Chip | SF-1206SA150M-2 |
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