16640 Model Download Search Results
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IS43TR16640C-125JBLI
Integrated Silicon Solution Inc.
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1 | SDRAM DDR3 Memory IC 1G-bit 64Mx16 1600MT/s 96-Pin BGA - Trays | BGA | IS43TR16640C-125JBLI |
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IS43TR16640CL-125JBLI
Integrated Silicon Solution Inc.
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1 | DRAM 1G, 1.35V, DDR3, 64Mx16, 1600MT/s @ 10-10-10, 96 ball BGA (9mm x13mm) RoHS. IT | BGA | IS43TR16640CL-125JBLI |
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IS43LR16640C-6BL
Integrated Silicon Solution Inc.
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1 | DRAM 1G, 1.8V, Mobile DDR, 64Mx16, 166Mhz, 60 ball BGA (8mmx10mm) RoHS | BGA | IS43LR16640C-6BL |
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IS46TR16640ED-125KBLA2-TR
Integrated Silicon Solution Inc.
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1 | DRAM 1G 64Mx16 1600MT/s DDR3 1.5V A-Temp | BGA | IS46TR16640ED-125KBLA2-TR |
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IS46TR16640ED-15HBLA2
Integrated Silicon Solution Inc.
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1 | DRAM 1333MT/s 64MX16 DDR3 SDRAM with ECC | BGA | IS46TR16640ED-15HBLA2 |
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IS46TR16640ED-15HBLA2-TR
Integrated Silicon Solution Inc.
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1 | DRAM 1G 64Mx16 1333MT/s DDR3 1.5V A-Temp | BGA | IS46TR16640ED-15HBLA2-TR |
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IS43TR16640ED-125KBLI-TR
Integrated Silicon Solution Inc.
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1 | DRAM 1G 64Mx16 1600MT/s D DR3 1.5V I-Temp | BGA | IS43TR16640ED-125KBLI-TR |
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IS43TR16640CL-125JBL
Integrated Silicon Solution Inc.
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1 | DRAM 1G, 1.35V, DDR3, 64Mx16, 1600MT/s @ 10-10-10, 96 ball BGA (9mm x13mm) RoHSStandard Voltage: VDD and VDDQ = 1.5V ± 0.075V• Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V• High speed data transfer rates with systemfrequency up to 1066 MHz• 8 internal banks for concurrent operation• 8n-bit pre-fetch architecture• Programmable CAS Latency• Programmable Additive Latency: 0, CL-1,CL-2• Programmable CAS WRITE latency (CWL) basedon tCK• Programmable | BGA | IS43TR16640CL-125JBL |
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IS43DR16640C-25DBLI
Integrated Silicon Solution Inc.
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1 | INTEGRATED SILICON SOLUTION (ISSI) - IS43DR16640C-25DBLI - DRAM, 64M X 16BIT, WBGA-84 | BGA | IS43DR16640C-25DBLI |
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ASEAIG3-16.640MHZ-X-C-T
ABRACON
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1 | Automotive & Industrial Grade SMD Crystal Oscillator | Other | ASEAIG3-16.640MHZ-X-C-T |
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IS46TR16640C-125JBLA2-TR
Integrated Silicon Solution Inc.
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1 | IC DRAM 1GBIT PARALLEL 96TWBGA | BGA | IS46TR16640C-125JBLA2-TR |
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IS43DR16640BL-3DBL-TR
Integrated Silicon Solution Inc.
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0 | 1Gb (x8, x16) DDR2 SDRAM | BGA | IS43DR16640BL-3DBL-TR |
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IS43TR16640C-125JBL
Integrated Silicon Solution Inc.
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1 | Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V• Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V• High speed data transfer rates with systemfrequency up to 1066 MHz• 8 internal banks for concurrent operation• 8n-bit pre-fetch architecture• Programmable CAS Latency• Programmable Additive Latency: 0, CL-1,CL-2• Programmable CAS WRITE latency (CWL) basedon tCK• Programmable Burst Length: 4 and 8• Programmable Burst Sequence: Sequential orInterleave | BGA | IS43TR16640C-125JBL |
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IS46TR16640C-125JBLA2
Integrated Silicon Solution Inc.
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1 | DRAM Automotive (Tc: -40 to +105C), 1G, 1.5V, DDR3, 64Mx16, 1600MT/s @ 10-10-10, 96 ball BGA (9mm x13mm) RoHS | BGA | IS46TR16640C-125JBLA2 |
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IS43LR16640A-6BLI
Integrated Silicon Solution Inc.
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1 | DRAM 1G, 1.8V, 166Mhz 64Mx16 Mobile DDR | BGA | IS43LR16640A-6BLI |
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IS46DR16640C-3DBLA1
Integrated Silicon Solution Inc.
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1 | DRAM Automotive (Tc: -40 to +95C),1G, 1.8V, DDR2, 64Mx16, 333Mhz @ CL5, 84 ball BGA (8mmx12.5mm) RoHS• Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V• JEDEC standard 1.8V I/O (SSTL_18-compatible)• Double data rate interface: two data transfersper clock cycle• Differential data strobe (DQS, DQS)• 4-bit prefetch architecture• On chip DLL to align DQ and DQS transitionswith CK• 8 internal banks for concurrent operation• Programmable CAS latency (CL) 3, 4, 5, 6 and 7supported• Posted CAS and progra | BGA | IS46DR16640C-3DBLA1 |
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IS43TR16640BL-125JBL
Integrated Silicon Solution Inc.
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1 | DRAM 1G, 1.35V, DDR3L, 64Mx16, 1600MT/s @ 10-10-10, 96 ball BGA (9mm x13mm) RoHS | BGA | IS43TR16640BL-125JBL |
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IS43TR16640A-15GBL
Integrated Silicon Solution Inc.
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1 | DRAM Chip DDR3 SDRAM 1Gbit 64Mx16 1.5V 96-Pin TW-BGA | BGA | IS43TR16640A-15GBL |
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IS43LD16640A-25BLI
Integrated Silicon Solution Inc.
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1 | DRAM 1G 1.2/1.8V 64Mx16 400MHz 134ball BGA | BGA | IS43LD16640A-25BLI |
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SIT8924BE-22-18E-16.640000
SiTime
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1 | Automotive AEC-Q100 Oscillator | Other | SIT8924BE-22-18E-16.640000 |
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ABM8AIG-16.640MHZ-10-J1Y
ABRACON
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1 | Automotive & Industrial Grade Ceramic Base SMD Crystal | Other | ABM8AIG-16.640MHZ-10-J1Y |
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1664040000
Weidmüller
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1 | Connector Accessory | 1664040000 |
1
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1664093
CommScope Inc
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1 | Cable Assembly, 1 Conductor(s), Fiber Optic Cable | 1664093 |
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1664060000
Weidmüller
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1 | Housing (industry plug-in connectors), Bulkhead housing, End-locking clamp, lower side, Size: 2, IP65 (in plugged condition) | 1664060000 |
1
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16-6402-240-TE
Viavi Solutions Inc
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1 | Optoelectronic Device | 16-6402-240-TE |
0
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![Part Image](["https://componentsearchengine.com/Images/1/IS43TR16640C-125JBLI.jpg",null,null])
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