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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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TXD2SA-12V-1-Z
Panasonic
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1 | 6,000 V surge withstand voltage, 2 Form C and 2 A high dielectric strength relays | Other | TXD2SA-12V-1-Z |
3
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TX2SA-12V-X
Panasonic
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1 | 2,000 Vrms dielectric strength, 2 Form C and 2 A relays | Other | TX2SA-12V-X |
3
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2SA1298-Y-TP
MCC
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1 | Small Signal Bipolar Transistors | SOT23 (3-Pin) | 2SA1298-Y-TP |
3
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TX2SA-1.5V
Panasonic
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1 | 2,000 Vrms dielectric strength, 2 Form C and 2 A relays | Other | TX2SA-1.5V |
3
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KT11P2SA1M34LFS
LITTELFUSE
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1 | SWITCH TACTILE SPST-NO 1VA 32V Tactile Switch SPST-NO Side Actuated Surface Mount, Right Angle | Other | KT11P2SA1M34LFS |
3
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2SA1121SCTL-E
Renesas Electronics
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1 | Small Signal Bipolar Transistors Silicon PNP Epitaxial | Other | 2SA1121SCTL-E |
2
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TX2SA-12V-Z
Panasonic
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1 | 2,000 Vrms dielectric strength, 2 Form C and 2 A relays | Other | TX2SA-12V-Z |
3
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TX2SA-12V-TH-Z
Panasonic
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1 | 7.5 A inrush current possible, 2 Form C small size relays | Other | TX2SA-12V-TH-Z |
3
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TX2SA-12V-TH-X
Panasonic
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1 | 7.5 A inrush current possible, 2 Form C small size relays | Other | TX2SA-12V-TH-X |
3
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S2SA1774G
onsemi
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1 | Low VCE(sat), < 0.5 V; High hFE, 210-460 (typical); Available in 8 mm, 7-inch/3000 Unit Tape and Reel; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable | SOT23 (3-Pin) | S2SA1774G |
3
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TXD2SA-12V-Z
Panasonic
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1 | 6,000 V surge withstand voltage, 2 Form C and 2 A high dielectric strength relays | Other | TXD2SA-12V-Z |
3
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2SA1942
Toshiba
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1 | PNP Bipolar Transistor, -160 V, -12 A, TO-3P(L) | Transistor Outline, Vertical | 2SA1942 |
3
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7142SA100J8
Renesas Electronics
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1 | The 7142 is a high-speed 2K x 8 Dual-Port Static RAM designed to be used as a "SLAVE" Dual-Port RAM together with the 7132 "MASTER" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available. | Plastic Leaded Chip Carrier | 7142SA100J8 |
2
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2SA1010-AZ
Renesas Electronics
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1 | Support is limited to customers who have already adopted these products.The 2SA1010 is a mold power transistor developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers. | Transistor Outline, Vertical | 2SA1010-AZ |
3
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2SA1986
Toshiba
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1 | • High breakdown voltage: VCEO = −230 V (min)• Complementary to 2SC5358• Recommended for 80-W high-fidelity audio frequency amplifieroutput stag | Other | 2SA1986 |
3
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2SA1615-Z-E1-AZ
Renesas Electronics
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1 | Support is limited to customers who have already adopted these products.The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. | Other | 2SA1615-Z-E1-AZ |
3
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2SA1987
Toshiba
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1 | • High breakdown voltage: VCEO = −230 V (min)• Complementary to 2SC5359• Recommended for 100-W high-fidelity audio frequency amplifieroutput stage. | Transistor Outline, Vertical | 2SA1987 |
3
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7132SA100CB
Renesas Electronics
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1 | The 7132 is a high-speed 2K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7142 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 | Ceramic Dual-In-Line Packages | 7132SA100CB |
2
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2SA1201-Y(TE12L,ZC
Toshiba
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1 | Pb-F POWER TRANSISTOR PW-MINI PD=1000mW V=120V F=120MHZ | Other | 2SA1201-Y(TE12L,ZC |
3
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2SA1593T-E
onsemi
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1 | Obsolete - Bipolar Transistor, (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA | Transistor Outline, Vertical | 2SA1593T-E |
3
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2SA1648-AZ
Renesas Electronics
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1 | Support is limited to customers who have already adopted these products.The 2SA1648 is a mold power transistor developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching. | Transistor Outline, Vertical | 2SA1648-AZ |
3
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2SA1069A-Z-AZ
Renesas Electronics
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1 | Support is limited to customers who have already adopted these products.The 2SA1069/1069A are the mold power transistors developed for high-speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers. | Other | 2SA1069A-Z-AZ |
2
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2SA1586
Toshiba
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1 | PNP Bipolar Transistor, -50 V, -0.15 A, SOT-323(USM) | Other | 2SA1586 |
3
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7132SA100J
Renesas Electronics
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1 | The 7132 is a high-speed 2K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7142 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 | Plastic Leaded Chip Carrier | 7132SA100J |
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TXD2SA-1.5V
Panasonic
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1 | 6,000 V surge withstand voltage, 2 Form C and 2 A high dielectric strength relays | Other | TXD2SA-1.5V |
3
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Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||