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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	71V256SA15YGI Renesas Electronics	1	The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Other	71V256SA15YGI	3D model available Symbol and footprint available 3	1 Download Model
	71V256SA20PZGI Renesas Electronics	1	The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Other	71V256SA20PZGI	3D model available Symbol and footprint available 3	1 Download Model
	71V25761S166BGI Renesas Electronics	1	The 71V25761 3.3V CMOS Synchronous SRAM is organized as 128K x 36 and contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V25761 can provide four cycles of data for a single address presented to the SRAM.	BGA	71V25761S166BGI	3D model available Symbol and footprint available 3	1 Download Model
	71V25761S183BGI8 Renesas Electronics	1	The 71V25761 3.3V CMOS Synchronous SRAM is organized as 128K x 36 and contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V25761 can provide four cycles of data for a single address presented to the SRAM.	BGA	71V25761S183BGI8	3D model available Symbol and footprint available 3	1 Download Model

	71V256SA12YG8 Renesas Electronics	1	The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Other	71V256SA12YG8	3D model available Symbol and footprint available 3	1 Download Model
	71V25761S183BGI Renesas Electronics	1	The 71V25761 3.3V CMOS Synchronous SRAM is organized as 128K x 36 and contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V25761 can provide four cycles of data for a single address presented to the SRAM.	BGA	71V25761S183BGI	3D model available Symbol and footprint available 3	1 Download Model
	71V25761S166BG Renesas Electronics	1	The 71V25761 3.3V CMOS Synchronous SRAM is organized as 128K x 36 and contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V25761 can provide four cycles of data for a single address presented to the SRAM.	BGA	71V25761S166BG	3D model available Symbol and footprint available 3	1 Download Model
	71V256SA12YG Renesas Electronics	1	The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Other	71V256SA12YG	3D model available Symbol and footprint available 3	1 Download Model
	71V256SA20PZG8 Renesas Electronics	1	The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Other	71V256SA20PZG8	3D model available Symbol and footprint available 3	1 Download Model
	71V256SA15PZGI8 Renesas Electronics	1	The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Other	71V256SA15PZGI8	3D model available Symbol and footprint available 3	1 Download Model
	71V256SA10PZG8 Renesas Electronics	1	The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Small Outline Packages	71V256SA10PZG8	3D model available Symbol and footprint available 3	1 Download Model
	71V256SA15YG Renesas Electronics	1	The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Other	71V256SA15YG	3D model available Symbol and footprint available 3	1 Download Model
	71V256SA12PZGI8 Renesas Electronics	1	The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Other	71V256SA12PZGI8	3D model available Symbol and footprint available 3	1 Download Model
	71V256SA12PZGI Renesas Electronics	1	The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Other	71V256SA12PZGI	3D model available Symbol and footprint available 3	1 Download Model
	71V25761S166BGI8 Renesas Electronics	1	The 71V25761 3.3V CMOS Synchronous SRAM is organized as 128K x 36 and contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V25761 can provide four cycles of data for a single address presented to the SRAM.	BGA	71V25761S166BGI8	3D model available Symbol and footprint available 3	1 Download Model

	71V256SA12YGI8 Renesas Electronics	1	The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Other	71V256SA12YGI8	3D model available Symbol and footprint available 3	1 Download Model
	IDT71V25761YSA200BGI8 Renesas Electronics	1	Renesas Electronics	BGA	IDT71V25761YSA200BGI8	3D model available Symbol and footprint available 3	1 Download Model
	71V2556XS200BQG Integrated Device Technology Inc	1	ZBT SRAM, 128KX36, 3.2ns, CMOS, PBGA165		71V2556XS200BQG	3D model not available Symbol and footprint not available 0	0 Build or Request
	71V2577S75BQI Integrated Device Technology Inc	1	Cache SRAM		71V2577S75BQI	3D model not available Symbol and footprint not available 0	0 Build or Request
	71V2558XS166BQGI Integrated Device Technology Inc	1	ZBT SRAM, 256KX18, 3.5ns, CMOS, PBGA165		71V2558XS166BQGI	3D model not available Symbol and footprint not available 0	0 Build or Request
	71V25761YSA183BQ8 Integrated Device Technology Inc	1	Standard SRAM, 128KX36, 3.3ns, CMOS, PBGA165		71V25761YSA183BQ8	3D model not available Symbol and footprint not available 0	0 Build or Request
	71V2578S183PF Integrated Device Technology Inc	1	Standard SRAM, 256KX18, 3.3ns, CMOS, PQFP100		71V2578S183PF	3D model not available Symbol and footprint not available 0	0 Build or Request
	71V2556SA133BQI8 Integrated Device Technology Inc	1	SRAM		71V2556SA133BQI8	3D model not available Symbol and footprint not available 0	0 Build or Request
	71V25761YS183BQGI8 Integrated Device Technology Inc	1	Cache SRAM, 128KX36, 3.3ns, CMOS, PBGA165		71V25761YS183BQGI8	3D model not available Symbol and footprint not available 0	0 Build or Request
	71V2556XS150PF8 Integrated Device Technology Inc	1	ZBT SRAM		71V2556XS150PF8	3D model not available Symbol and footprint not available 0	0 Build or Request
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