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Image Part Number D.S Description Package Category Prices / Stock Model Action
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71V67603S150PFG8 Renesas Electronics
1 The 71V67603 3.3V CMOS SRAM is organized as 256K x 36. The 71V67603 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.The order of these three addresses are defined by the internal burst counter and the LBO input pin. Quad Flat Packages 71V67603S150PFG8 1 Download Model
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71V67603S166PFGI8 Renesas Electronics
1 The 71V67603 3.3V CMOS SRAM is organized as 256K x 36. The 71V67603 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.The order of these three addresses are defined by the internal burst counter and the LBO input pin. Quad Flat Packages 71V67603S166PFGI8 1 Download Model
Part Image Part Image 1 Micro-Fit+ Right-Angle Header, Through Hole, 3.00mm Pitch, Single Row, 6 Circuits, 0.76µm Gold (Au) Plating, Glow-Wire Capable, Black Other 2157603006 1 Download Model
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71V67603S133BQI Renesas Electronics
1 The 71V67603 3.3V CMOS SRAM is organized as 256K x 36. The 71V67603 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.The order of these three addresses are defined by the internal burst counter and the LBO input pin. BGA 71V67603S133BQI 1 Download Model
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760308101219 Würth Elektronik
1 WE-WPCC Wireless Power Charging Coil Size ˜ 15 x 0.6mm; L = 11.8 µH; Q = 13; IRdc = 0.7 A; Pdc = <5 W;Isat = 1.5 A; RDC = 750 mΩ Other 760308101219 1 Download Model
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71V67603S133BGGI Renesas Electronics
1 The 71V67603 3.3V CMOS SRAM is organized as 256K x 36. The 71V67603 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.The order of these three addresses are defined by the internal burst counter and the LBO input pin. BGA 71V67603S133BGGI 1 Download Model
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760308102207 Würth Elektronik
1 WE-WPCC Wireless Power Charging Coil Size 40 x 40 x 1.2mm; L = 8.0 µH; Q = 30; IRdc = 5.0 A; Pdc = <80 W;Isat = 10.0 A; RDC = 80 mΩ Other 760308102207 1 Download Model
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760301104 Würth Elektronik
1 WE-GDT Gate-Drive-Transformer Size EP5; L = 330 µH ; n = 2:1:1; ∫Udt = 28.6 µVs; UT = 1500 V Other 760301104 1 Download Model
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71V67603S150PFGI8 Renesas Electronics
1 The 71V67603 3.3V CMOS SRAM is organized as 256K x 36. The 71V67603 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.The order of these three addresses are defined by the internal burst counter and the LBO input pin. Quad Flat Packages 71V67603S150PFGI8 1 Download Model
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744760315A Würth Elektronik
1 WE-RFI SMT Ferrite Inductor Size 0805; L = 1.5 µH ±5%; Qmin = 15; RDCmax = 1.45 Ω Other 744760315A 1 Download Model
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760308101217 Würth Elektronik
1 WE-WPCC Wireless Power Charging Coil Size ˜ 10 x 1.8mm; L = 24.2 µH; Q = 13; IRdc = 0.4 A; Pdc = <5 W;Isat = 1.0 A; RDC = 1400 mΩ Other 760308101217 1 Download Model
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760308103206 Würth Elektronik
1 WE-WPCC Wireless Power Charging Coil Size 28.9 x 15.7 x 0.76 mm ; L = 7.5 µH; Q = 16; IRdc = 1.55 A; Pdc = <20 W;Isat = 3.0 A; RDC = 380 mΩ Other 760308103206 1 Download Model
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760308101208 Würth Elektronik
1 WE-WPCC Wireless Power Charging Coil Size ˜ 10 x 1.6mm; L = 13 µH; Q = 17; IRdc = 0.8 A; Pdc = <15 W;Isat = 2.0 A; RDC = 500 mΩ Other 760308101208 1 Download Model
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71V67603S133BG Renesas Electronics
1 The 71V67603 3.3V CMOS SRAM is organized as 256K x 36. The 71V67603 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.The order of these three addresses are defined by the internal burst counter and the LBO input pin. BGA 71V67603S133BG 1 Download Model
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71V67603S133BGI Renesas Electronics
1 The 71V67603 3.3V CMOS SRAM is organized as 256K x 36. The 71V67603 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.The order of these three addresses are defined by the internal burst counter and the LBO input pin. BGA 71V67603S133BGI 1 Download Model
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760390015 Würth Elektronik
1 WE-PPTI Push-Pull Transformer TOR4.3/2.8/2.3 SMT; Ui = 3.3V; Uo1 = 5V/0.35A Other 760390015 1 Download Model
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760301106 Würth Elektronik
1 WE-GDT Gate-Drive-Transformer Size EP5; L = 370 µH ; n = 1:1; ∫Udt = 30.2 µVs; UT = 1500 V Other 760301106 1 Download Model
Part Image Part Image 1 M20: 3+3 Pos Plug DIL Straight 3mm THT Connector 5.8mm pin Gold+Tin Other M20-9760342 1 Download Model
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TPS76032DBVRG4 Texas Instruments
1 TPS76032DBVRG4, Low Dropout Voltage Regulator, 0.05A, 3.2V ±2%, 3.4 to 16Vin, 0.555W, 5-Pin SOT-23 SOT23 (5-Pin) TPS76032DBVRG4 1 Download Model
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7077603 RS Pro
1 RS Pro RS Series Axial Carbon Resistor 150Ω ±5% 0.25W -500 → +350ppm/°C Resistors, Axial Diameter Horizontal Mounting 7077603 1 Download Model
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744760315C Würth Elektronik
1 Wurth WE-KI Series Wire-wound SMD Inductor with a Ceramic Core, 1.5 μH ±5% 130mA Idc Q:20 Other 744760315C 1 Download Model
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TPS76033DBVR Texas Instruments
1 16-V, 50-mA, Low Iq, Low-Dropout Linear Regulator SOT23 (5-Pin) TPS76033DBVR 1 Download Model
Part Image Part Image 1 Headers & Wire Housings 2MM HDR. 32 CKT. R/A Selective Gold Other 87760-3216 1 Download Model
Part Image Part Image 1 OSCILLATOR, 24MHZ, 2.5MM X 2MM, CMOS Other LFSPXO076033 1 Download Model
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760301107 Würth Elektronik
1 WE-GDT Gate-Drive-Transformer Size EP5; L = 650 µH ; n = 1.5:1; ∫Udt = 40.8 µVs; UT = 1500 V Other 760301107 1 Download Model
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