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71V67603S150PFG8
Renesas Electronics
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1 | The 71V67603 3.3V CMOS SRAM is organized as 256K x 36. The 71V67603 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.The order of these three addresses are defined by the internal burst counter and the LBO input pin. | Quad Flat Packages | 71V67603S150PFG8 |
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71V67603S166PFGI8
Renesas Electronics
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1 | The 71V67603 3.3V CMOS SRAM is organized as 256K x 36. The 71V67603 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.The order of these three addresses are defined by the internal burst counter and the LBO input pin. | Quad Flat Packages | 71V67603S166PFGI8 |
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2157603006
Molex
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1 | Micro-Fit+ Right-Angle Header, Through Hole, 3.00mm Pitch, Single Row, 6 Circuits, 0.76µm Gold (Au) Plating, Glow-Wire Capable, Black | Other | 2157603006 |
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71V67603S133BQI
Renesas Electronics
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1 | The 71V67603 3.3V CMOS SRAM is organized as 256K x 36. The 71V67603 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.The order of these three addresses are defined by the internal burst counter and the LBO input pin. | BGA | 71V67603S133BQI |
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760308101219
Würth Elektronik
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1 | WE-WPCC Wireless Power Charging Coil Size ˜ 15 x 0.6mm; L = 11.8 µH; Q = 13; IRdc = 0.7 A; Pdc = <5 W;Isat = 1.5 A; RDC = 750 mΩ | Other | 760308101219 |
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71V67603S133BGGI
Renesas Electronics
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1 | The 71V67603 3.3V CMOS SRAM is organized as 256K x 36. The 71V67603 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.The order of these three addresses are defined by the internal burst counter and the LBO input pin. | BGA | 71V67603S133BGGI |
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760308102207
Würth Elektronik
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1 | WE-WPCC Wireless Power Charging Coil Size 40 x 40 x 1.2mm; L = 8.0 µH; Q = 30; IRdc = 5.0 A; Pdc = <80 W;Isat = 10.0 A; RDC = 80 mΩ | Other | 760308102207 |
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760301104
Würth Elektronik
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1 | WE-GDT Gate-Drive-Transformer Size EP5; L = 330 µH ; n = 2:1:1; ∫Udt = 28.6 µVs; UT = 1500 V | Other | 760301104 |
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71V67603S150PFGI8
Renesas Electronics
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1 | The 71V67603 3.3V CMOS SRAM is organized as 256K x 36. The 71V67603 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.The order of these three addresses are defined by the internal burst counter and the LBO input pin. | Quad Flat Packages | 71V67603S150PFGI8 |
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744760315A
Würth Elektronik
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1 | WE-RFI SMT Ferrite Inductor Size 0805; L = 1.5 µH ±5%; Qmin = 15; RDCmax = 1.45 Ω | Other | 744760315A |
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760308101217
Würth Elektronik
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1 | WE-WPCC Wireless Power Charging Coil Size ˜ 10 x 1.8mm; L = 24.2 µH; Q = 13; IRdc = 0.4 A; Pdc = <5 W;Isat = 1.0 A; RDC = 1400 mΩ | Other | 760308101217 |
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760308103206
Würth Elektronik
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1 | WE-WPCC Wireless Power Charging Coil Size 28.9 x 15.7 x 0.76 mm ; L = 7.5 µH; Q = 16; IRdc = 1.55 A; Pdc = <20 W;Isat = 3.0 A; RDC = 380 mΩ | Other | 760308103206 |
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760308101208
Würth Elektronik
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1 | WE-WPCC Wireless Power Charging Coil Size ˜ 10 x 1.6mm; L = 13 µH; Q = 17; IRdc = 0.8 A; Pdc = <15 W;Isat = 2.0 A; RDC = 500 mΩ | Other | 760308101208 |
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71V67603S133BG
Renesas Electronics
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1 | The 71V67603 3.3V CMOS SRAM is organized as 256K x 36. The 71V67603 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.The order of these three addresses are defined by the internal burst counter and the LBO input pin. | BGA | 71V67603S133BG |
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71V67603S133BGI
Renesas Electronics
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1 | The 71V67603 3.3V CMOS SRAM is organized as 256K x 36. The 71V67603 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.The order of these three addresses are defined by the internal burst counter and the LBO input pin. | BGA | 71V67603S133BGI |
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760390015
Würth Elektronik
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1 | WE-PPTI Push-Pull Transformer TOR4.3/2.8/2.3 SMT; Ui = 3.3V; Uo1 = 5V/0.35A | Other | 760390015 |
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760301106
Würth Elektronik
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1 | WE-GDT Gate-Drive-Transformer Size EP5; L = 370 µH ; n = 1:1; ∫Udt = 30.2 µVs; UT = 1500 V | Other | 760301106 |
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M20-9760342
Harwin
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1 | M20: 3+3 Pos Plug DIL Straight 3mm THT Connector 5.8mm pin Gold+Tin | Other | M20-9760342 |
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TPS76032DBVRG4
Texas Instruments
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1 | TPS76032DBVRG4, Low Dropout Voltage Regulator, 0.05A, 3.2V ±2%, 3.4 to 16Vin, 0.555W, 5-Pin SOT-23 | SOT23 (5-Pin) | TPS76032DBVRG4 |
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7077603
RS Pro
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1 | RS Pro RS Series Axial Carbon Resistor 150Ω ±5% 0.25W -500 → +350ppm/°C | Resistors, Axial Diameter Horizontal Mounting | 7077603 |
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744760315C
Würth Elektronik
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1 | Wurth WE-KI Series Wire-wound SMD Inductor with a Ceramic Core, 1.5 μH ±5% 130mA Idc Q:20 | Other | 744760315C |
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TPS76033DBVR
Texas Instruments
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1 | 16-V, 50-mA, Low Iq, Low-Dropout Linear Regulator | SOT23 (5-Pin) | TPS76033DBVR |
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87760-3216
Molex
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1 | Headers & Wire Housings 2MM HDR. 32 CKT. R/A Selective Gold | Other | 87760-3216 |
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LFSPXO076033
IQD
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1 | OSCILLATOR, 24MHZ, 2.5MM X 2MM, CMOS | Other | LFSPXO076033 |
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760301107
Würth Elektronik
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1 | WE-GDT Gate-Drive-Transformer Size EP5; L = 650 µH ; n = 1.5:1; ∫Udt = 40.8 µVs; UT = 1500 V | Other | 760301107 |
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