BAP64 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 Pin Diodes BAP64-05-TP 1 Download Model
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BAP64W-05-C Secos Corporation
1 Pin Diode, 175V V(BR), Silicon BAP64W-05-C 0 Build or Request
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BAP64-04-C Secos Corporation
1 Pin Diode BAP64-04-C 0 Build or Request
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BAP64-05 Secos Corporation
1 Pin Diode, 175V V(BR), Silicon BAP64-05 0 Build or Request
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BAP64-05TRL NXP Semiconductors
1 Pin Diode, 175V V(BR), Silicon BAP64-05TRL 0 Build or Request
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BAP64-04 Philips Semiconductors
1 Pin Diode, 175V V(BR) BAP64-04 0 Build or Request
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BAP64-04W Philips Semiconductors
1 Pin Diode, 100V V(BR) BAP64-04W 0 Build or Request
Part Image Part Image 0 Pin Diodes BAP64-04 1 Download Model
Part Image Part Image 1 Pin Diodes BAP64-04W-TP 1 Download Model
Part Image Part Image 1 RF Diode PIN - 1 Pair Common Cathode 100V 100 mA 240 mW SC-70 BAP64-05W,115 1 Download Model
Part Image Part Image 0 Pin Diodes BAP64-06W 1 Download Model
Part Image Part Image 0 Pin Diodes BAP64-04W 1 Download Model
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BAP64-04W JCET Group
1 BAP64-04W, BAP64-05W, BAP64-06W Pin Diode with high voltage and current control, low capacitance of 0.35 pF at 20V, low forward resistance of 1.35 ohms at 100MHz, suitable for RF attenuators and switches up to 3 GHz. BAP64-04W 0 Build or Request
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BAP64-05W JCET Group
1 BAP64-04W, BAP64-05W, BAP64-06W Pin Diode with high voltage and current control, low capacitance of 0.35 pF at 20V, low forward resistance of 1.35 ohms at 100MHz, suitable for RF attenuators and switches up to 3 GHz. BAP64-05W 0 Build or Request
Part Image Part Image 1 Pin Diodes BAP64-05W-TP 1 Download Model
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BAP64-06T/R NXP Semiconductors
1 Pin Diode, 175V V(BR), Silicon, TO-236AB BAP64-06T/R 0 Build or Request
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BAP64-05 JCET Group
1 High-voltage, current-controlled RF pin diode in SOT-23 package, suitable for applications up to 3 GHz, featuring low capacitance, low forward resistance, and low series inductance, with 175 V reverse voltage and 100 mA forward current rating. BAP64-05 0 Build or Request
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BAP64-03 Shikues Semiconductor
1 High voltage, current controlled, low diode capacitance, forward resistance, series inductance, up to 3 GHz. BAP64-03 0 Build or Request
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BAP64-04 JCET Group
1 High-voltage, current-controlled RF pin diode for attenuators and switches with low capacitance, low forward resistance, and low series inductance, suitable for applications up to 3 GHz. BAP64-04 0 Build or Request
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AD-BAP64-05 JCET Group
1 AD-BAP64-04/05/06 is a plastic-encapsulated PIN diode with high voltage capability, low capacitance of 0.52 pF at 0V, low forward resistance down to 1.35 ohms at 100mA, and operation up to 3 GHz, suitable for RF attenuators and switches. AD-BAP64-05 0 Build or Request
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934055977215 NXP Semiconductors
1 Pin Diode, 175V V(BR), Silicon, TO-236AB 934055977215 0 Build or Request
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934055510215 NXP Semiconductors
1 Pin Diode, 175V V(BR), Silicon 934055510215 0 Build or Request
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934055688215 NXP Semiconductors
1 Pin Diode, 175V V(BR), Silicon, TO-236AB 934055688215 0 Build or Request
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934056545115 NXP Semiconductors
1 Pin Diode, 100V V(BR), Silicon 934056545115 0 Build or Request
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934061242315 NXP Semiconductors
1 Pin Diode 934061242315 0 Build or Request
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