IBC20 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IRG4IBC20KD Infineon Technologies AG	1	Insulated Gate Bipolar Transistor, 11.5A I(C), 600V V(BR)CES, N-Channel, TO-220AB	IRG4IBC20KD	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFIBC20G-013 International Rectifier	1	Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFIBC20G-013	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFIBC20G-018 International Rectifier	1	Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFIBC20G-018	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRG4IBC20UDPBF International Rectifier	1	Insulated Gate Bipolar Transistor, 11.4A I(C), 600V V(BR)CES, N-Channel, TO-220AB	IRG4IBC20UDPBF	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRFIBC20G-031PBF International Rectifier	1	Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFIBC20G-031PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFIBC20G-004 International Rectifier	1	Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFIBC20G-004	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFIBC20G Vishay Intertechnologies	1	Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFIBC20G	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRG4IBC20KD International Rectifier	1	Insulated Gate Bipolar Transistor, 11.5A I(C), 600V V(BR)CES, N-Channel, TO-220AB	IRG4IBC20KD	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFIBC20G-005 International Rectifier	1	Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFIBC20G-005	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRG4IBC20FDPBF Infineon Technologies AG	1	Insulated Gate Bipolar Transistor, 14.3A I(C), 600V V(BR)CES, N-Channel, TO-220AB	IRG4IBC20FDPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRG4IBC20KDPBF International Rectifier	1	Insulated Gate Bipolar Transistor, 11.5A I(C), 600V V(BR)CES, N-Channel, TO-220AB	IRG4IBC20KDPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRG4IBC20FD Infineon Technologies AG	1	Insulated Gate Bipolar Transistor, 14.3A I(C), 600V V(BR)CES, N-Channel, TO-220AB	IRG4IBC20FD	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFIBC20G-010PBF International Rectifier	1	Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFIBC20G-010PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFIBC20G-019 International Rectifier	1	Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFIBC20G-019	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFIBC20G-002 International Rectifier	1	Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFIBC20G-002	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRFIBC20G-015PBF International Rectifier	1	Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFIBC20G-015PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFIBC20GPBF Vishay Siliconix	1	Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFIBC20GPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFIBC20G-010 International Rectifier	1	Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFIBC20G-010	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFIBC20G-018PBF International Rectifier	1	Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFIBC20G-018PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFIBC20G-017 International Rectifier	1	Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFIBC20G-017	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFIBC20G-011PBF International Rectifier	1	Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFIBC20G-011PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFIBC20G-015 International Rectifier	1	Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFIBC20G-015	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFIBC20G-024PBF International Rectifier	1	Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFIBC20G-024PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFIBC20G-003 International Rectifier	1	Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFIBC20G-003	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFIBC20G-031 International Rectifier	1	Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFIBC20G-031	3D model not available Symbol and footprint not available 0	0 Build or Request
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