IPB60 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IPB60R330P6 Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-263AB	IPB60R330P6	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R145CFD7ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 16A I(D), 600V, 0.145ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-263AB	IPB60R145CFD7ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R145CFD7 Infineon Technologies AG	1	Power Field-Effect Transistor, 16A I(D), 600V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R145CFD7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R250CPATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R250CPATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request

	IPB60R099C6 Infineon Technologies AG	1	Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R099C6	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R099CP Infineon Technologies AG	1	Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R099CP	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R385CP Infineon Technologies AG	1	Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R385CP	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R210CFD7ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 600V, 0.21ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-263AB	IPB60R210CFD7ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R060C7 Infineon Technologies AG	1	Power Field-Effect Transistor, 35A I(D), 600V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R060C7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R520CP Infineon Technologies AG	1	Power Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R520CP	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R160C6 Infineon Technologies AG	1	Power Field-Effect Transistor, 23.8A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R160C6	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R380P6ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R380P6ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R040CFD7 Infineon Technologies AG	1	Power Field-Effect Transistor, 50A I(D), 600V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R040CFD7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R600P6ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R600P6ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R090CFD7ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 25A I(D), 600V, 0.09ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-263AB	IPB60R090CFD7ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request

	IPB60R170CFD7ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 14A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-263AB	IPB60R170CFD7ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R120C7ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 19A I(D), 600V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R120C7ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R299CP Infineon Technologies AG	1	Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R299CP	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R125CFD7 Infineon Technologies AG	1	Power Field-Effect Transistor, 18A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R125CFD7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R280C6XT Infineon Technologies AG	1	Power Field-Effect Transistor, 13.8A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R280C6XT	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R105CFD7 Infineon Technologies AG	1	Power Field-Effect Transistor, 21A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R105CFD7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R090CFD7 Infineon Technologies AG	1	Power Field-Effect Transistor, 25A I(D), 600V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R090CFD7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R199CPAATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R199CPAATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R190P6 Infineon Technologies AG	1	Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R190P6	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R210CFD7 Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 600V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R210CFD7	3D model not available Symbol and footprint not available 0	0 Build or Request
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