IPD60 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IPD60R600PFD7S Infineon Technologies AG	1	Power Field-Effect Transistor, 6A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-252	IPD60R600PFD7S	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R280P7S Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R280P7S	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R600P6ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R600P6ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R360P7S Infineon Technologies AG	1	Power Field-Effect Transistor, 9A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R360P7S	3D model not available Symbol and footprint not available 0	0 Build or Request

	IPD60R280PFD7S Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R280PFD7S	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R280PFD7SAUMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-252	IPD60R280PFD7SAUMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R650CE Infineon Technologies AG	1	Power Field-Effect Transistor, 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R650CE	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R170CFD7 Infineon Technologies AG	1	Power Field-Effect Transistor, 14A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R170CFD7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R600C6ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R600C6ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R1K5PFD7SAUMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 3.6A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R1K5PFD7SAUMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R600P7 Infineon Technologies AG	1	Power Field-Effect Transistor, 6A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R600P7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R1K4C6 Infineon Technologies AG	1	Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R1K4C6	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R520C6ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 8.1A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R520C6ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R1K0CEATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 6.8A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R1K0CEATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R380E6ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R380E6ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request

	IPD60R600P6BTMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R600P6BTMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R380E6 Infineon Technologies AG	1	Power Field-Effect Transistor, 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R380E6	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R750E6ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R750E6ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R385CP Infineon Technologies AG	1	Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA	IPD60R385CP	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R380P6 Infineon Technologies AG	1	Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R380P6	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R950C6ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 4.4A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R950C6ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R950C6BTMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 4.4A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R950C6BTMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R280P7 Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R280P7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R750E6BTMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R750E6BTMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R400CEATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R400CEATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
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