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IPP65R065C7XKSA1
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 33A I(D), 650V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IPP65R065C7XKSA1 |
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IPP65R110CFDXKSA1
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IPP65R110CFDXKSA1 |
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IPP65R310CFDAXK
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 11.4A I(D), 650V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IPP65R310CFDAXK |
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IPP65R190CFDXKSA1
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IPP65R190CFDXKSA1 |
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IPP65R600E6XKSA1
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IPP65R600E6XKSA1 |
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