Showing 5 of 80 results
Filter by Manufacturer
| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
|---|
| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IPP65R110CFDXKSA1
Infineon Technologies AG
|
1 | Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IPP65R110CFDXKSA1 |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
IPP65R310CFDAAKSA1
Infineon Technologies AG
|
1 | Power Field-Effect Transistor, 11.4A I(D), 650V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IPP65R310CFDAAKSA1 |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
IPP65R150CFDA
Infineon Technologies AG
|
1 | Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IPP65R150CFDA |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
IPP65R600C6
Infineon Technologies AG
|
1 | Power Field-Effect Transistor, 7.3A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IPP65R600C6 |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
IPP65R065C7XKSA1
Infineon Technologies AG
|
1 | Power Field-Effect Transistor, 33A I(D), 650V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IPP65R065C7XKSA1 |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||