IRL52 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IRL520-018PBF International Rectifier	1	Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL520-018PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL520-006 International Rectifier	1	Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL520-006	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL520STRL International Rectifier	1	Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRL520STRL	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL520-003 Infineon Technologies AG	1	Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL520-003	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRL520N-017PBF International Rectifier	1	Power Field-Effect Transistor, 10A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL520N-017PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL520N-029 Infineon Technologies AG	1	Power Field-Effect Transistor, 10A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL520N-029	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL520N-018PBF International Rectifier	1	Power Field-Effect Transistor, 10A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL520N-018PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL520NS Infineon Technologies AG	1	Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRL520NS	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL520-030PBF International Rectifier	1	Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL520-030PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL520-031 Infineon Technologies AG	1	Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL520-031	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL520NSTRL International Rectifier	1	Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRL520NSTRL	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL520-003PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL520-003PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL520N-013 Infineon Technologies AG	1	Power Field-Effect Transistor, 10A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL520N-013	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL520 Samsung Semiconductor	1	Power Field-Effect Transistor, 7.9A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL520	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL520-029PBF International Rectifier	1	Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL520-029PBF	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRL520-019 International Rectifier	1	Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL520-019	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL520-030PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL520-030PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL520N-012 International Rectifier	1	Power Field-Effect Transistor, 10A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL520N-012	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL520N-029PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 10A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL520N-029PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL520NL International Rectifier	1	Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	IRL520NL	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL520-012PBF International Rectifier	1	Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL520-012PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL520N-031 International Rectifier	1	Power Field-Effect Transistor, 10A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL520N-031	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL520N-002 Infineon Technologies AG	1	Power Field-Effect Transistor, 10A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL520N-002	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL520N-018PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 10A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL520N-018PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL520-018 Infineon Technologies AG	1	Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRL520-018	3D model not available Symbol and footprint not available 0	0 Build or Request
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