IRLI6 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IRLI610ATU Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	IRLI610ATU	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI640G-010 Vishay Intertechnologies	1	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI640G-010	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI640G-009PBF International Rectifier	1	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI640G-009PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI640G-010 International Rectifier	1	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI640G-010	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRLI640G-013 International Rectifier	1	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI640G-013	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI630GPBF International Rectifier	1	Power Field-Effect Transistor, 6.2A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI630GPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI620G-003 International Rectifier	1	Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI620G-003	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI630G-011 International Rectifier	1	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI630G-011	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI630GPBF Vishay Intertechnologies	1	Power Field-Effect Transistor, 6.2A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI630GPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI630G-002PBF International Rectifier	1	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI630G-002PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI630G-009PBF International Rectifier	1	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI630G-009PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI640G-003PBF International Rectifier	1	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI640G-003PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI610ATU Rochester Electronics LLC	1	3.3A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3	IRLI610ATU	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI640G-002PBF International Rectifier	1	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI640G-002PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI620G-018PBF International Rectifier	1	Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI620G-018PBF	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRLI630G-024 International Rectifier	1	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI630G-024	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI620A Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.3A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	IRLI620A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI640G-006 International Rectifier	1	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI640G-006	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI630G-029PBF Vishay Intertechnologies	1	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI630G-029PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI620G-003 Vishay Intertechnologies	1	Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI620G-003	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI640G-031PBF International Rectifier	1	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI640G-031PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI620G-009 International Rectifier	1	Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI620G-009	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI630G-015 International Rectifier	1	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI630G-015	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI620G-009PBF International Rectifier	1	Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI620G-009PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI620G-019PBF International Rectifier	1	Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI620G-019PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
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