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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IRLML2402 Shenzhen Heketai Electronics Co Ltd	1	N-channel Power MOSFET in SOT-23 package with ultra-low on-resistance of 0.25 ohm at 4.5 V gate-to-source voltage, continuous drain current up to 1.2 A, and drain-to-source voltage rating of 20 V.	IRLML2402	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6401 Shenzhen Heketai Electronics Co Ltd	1	P-channel MOSFET with -30V drain-source voltage, -4A continuous drain current, and 52mΩ on-resistance at VGS=-10V, suitable for PWM and load switch applications in SOT-23 package.	IRLML6401	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML0040 Shenzhen Heketai Electronics Co Ltd	1	N-channel low voltage MOSFET in SOT-23 package with 40V drain-source voltage, 56mΩ on-resistance at 10V gate-source voltage, and 3.6A continuous drain current, suitable for load switch and DC-DC converter applications.	IRLML0040	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML2402 Shikues Semiconductor	1	30V/1A, RDS(ON)=750mΩ@VGS=10V, 900mΩ@VGS=4.5V, SOT-23, Super High dense cell design.	IRLML2402	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRLML0030 Shenzhen Heketai Electronics Co Ltd	1	N-channel MOSFET in SOT-23 package with 30V drain-source voltage, 5.3A continuous drain current, and ultra-low on-resistance of less than 27mΩ at VGS=10V, suitable for surface mount applications requiring fast switching.	IRLML0030	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6401 International Rectifier	1	Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6401	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML2246TRPBF-1 Infineon Technologies AG	1	Power Field-Effect Transistor	IRLML2246TRPBF-1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML2402 Infineon Technologies AG	1	Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML2402	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6302PBF International Rectifier	1	Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6302PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6402GPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6402GPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML2502GPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML2502GPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6401PBF International Rectifier	1	Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6401PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML5203TRPBF-1 International Rectifier	1	Power Field-Effect Transistor	IRLML5203TRPBF-1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML0030TRPBF-1 Infineon Technologies AG	1	Power Field-Effect Transistor, 5.3A I(D), 30V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML0030TRPBF-1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML5203GPBF International Rectifier	1	Power Field-Effect Transistor, 3A I(D), 30V, 0.098ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML5203GPBF	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRLML2030TRPBF International Rectifier	1	Power Field-Effect Transistor, 2.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML2030TRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML5103PBF International Rectifier	1	Small Signal Field-Effect Transistor, 0.76A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML5103PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML2502 Shenzhen Heketai Electronics Co Ltd	1	N-channel MOSFET in SOT-23 package with 20 V drain-source voltage, 4.2 A continuous drain current, and ultra-low on-resistance of 45 mΩ at 4.5 V gate-source voltage.	IRLML2502	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML0060 Shenzhen Heketai Electronics Co Ltd	1	N-channel MOSFET in SOT-23 package with 60V drain-source voltage, 3A continuous drain current, and 105mΩ typical on-resistance at 10V gate-source voltage, designed for surface mount applications.	IRLML0060	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML2402GPBF Infineon Technologies AG	1	Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML2402GPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6402TRPBF-1 Infineon Technologies AG	1	Power Field-Effect Transistor, 4.3A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET	IRLML6402TRPBF-1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML0060TRPBF International Rectifier	1	Power Field-Effect Transistor, 2.7A I(D), 60V, 0.092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MICRO3, 3 PIN	IRLML0060TRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML2803GPBF Infineon Technologies AG	1	Small Signal Field-Effect Transistor	IRLML2803GPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6344TRPBF International Rectifier	1	Power Field-Effect Transistor, 5A I(D), 30V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6344TRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML5203GTRPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 3A I(D), 30V, 0.098ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML5203GTRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
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