IRLZ1 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IRLZ14-012 International Rectifier	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLZ14-012	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14-017PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLZ14-017PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14-015PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLZ14-015PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14STRRPBF International Rectifier	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRLZ14STRRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRLZ14STRRPBF Vishay Siliconix	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRLZ14STRRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14-010PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLZ14-010PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14-031PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLZ14-031PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14-002 International Rectifier	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLZ14-002	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14-013PBF International Rectifier	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLZ14-013PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14 Texas Instruments	1	10A, 60V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN	IRLZ14	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14-001PBF International Rectifier	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRLZ14-001PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14-003PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLZ14-003PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14-004 Infineon Technologies AG	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLZ14-004	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14-013PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLZ14-013PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14 Samsung Semiconductor	1	Power Field-Effect Transistor, 6.7A I(D), 60V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLZ14	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRLZ14-007 Infineon Technologies AG	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLZ14-007	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14-007PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLZ14-007PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14-013 International Rectifier	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLZ14-013	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14-019 International Rectifier	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLZ14-019	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14-031PBF International Rectifier	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLZ14-031PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14-004PBF International Rectifier	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLZ14-004PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14A Samsung Semiconductor	1	Power Field-Effect Transistor, 10A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET	IRLZ14A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14-006 International Rectifier	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLZ14-006	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14-009 Infineon Technologies AG	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLZ14-009	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14-006PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLZ14-006PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
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