ISL73 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	ISL73051ASEHVF Intersil Corporation	1	Adjustable Positive LDO Regulator, 0.8V Min, 5V Max, BICMOS, CDFP18	ISL73051ASEHVF	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73051ASEHX/SAMPLE Renesas Electronics Corporation	1	Adjustable Positive LDO Regulator	ISL73051ASEHX/SAMPLE	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73096EHVF Intersil Corporation	1	RF POWER TRANSISTOR	ISL73096EHVF	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73128RHVF Intersil Corporation	1	RF POWER TRANSISTOR	ISL73128RHVF	3D model not available Symbol and footprint not available 0	0 Build or Request

	ISL73096EHVX Intersil Corporation	1	RF POWER TRANSISTOR	ISL73096EHVX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73040SEHVL Intersil Corporation	1	Buffer/Inverter Based Peripheral Driver	ISL73040SEHVL	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73127EHVF Renesas Electronics	1	The ISL73096, ISL73127 and ISL73128 are radiation hardened bipolar transistor arrays. The ISL73096 consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127 consists of five NPN transistors on a common substrate. The ISL73128 consists of five PNP transistors on a common substrate. The ISL73096EH, ISL73127EH and ISL73128EH devices encompass all of the production testing of the ISL73096RH, ISL73127RH and ISL73128RH devices and additionally are tested in the Intersil Enhance	ISL73127EHVF	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73061SEHVF Renesas Electronics	1	The ISL73061SEH is a radiation hardened single channel load switch featuring ultra-low rON and controlled rise time. This device uses a PMOS pass device as the main switch that operates across an input voltage range of 3V to 5.5V and can support a maximum of 10A continuous current. Simple ON/OFF digital control inputs make the device capable of interfacing directly with low voltage control signals from an FPGA, MCU, or processor. Additional features include reverse current protection to stop current from fl	ISL73061SEHVF	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL738841ASEHF/PROTO Renesas Electronics	1	The ISL738841ASEH is a high-performance, radiation hardened drop-in replacement for the popular 28C4x and 18C4x PWM controllers suitable for a wide range of power conversion applications including boost, flyback and isolated output configurations. Fast signal propagation and output switching characteristics make these ideal products for existing and new designs. Features include up to 13.2V operation, low operating current, 90µA typical start-up current, adjustable operating frequency to 1MHz, and high peak	ISL738841ASEHF/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL738840ASEHVD Renesas Electronics	1	The ISL738840ASEH is a high-performance, radiation hardened drop-in replacement for the popular 28C4x and 18C4x PWM controllers suitable for a wide range of power conversion applications including boost, flyback and isolated output configurations. Fast signal propagation and output switching characteristics make these ideal products for existing and new designs. Features include up to 13.2V operation, low operating current, 90µA typical start-up current, adjustable operating frequency to 1MHz, and high peak	ISL738840ASEHVD	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73141SEHFN/PROTO Renesas Electronics	1	The ISL73141SEH is a radiation hardened, high-precision, 14-bit, 1MSPS SAR analog-to-digital converter (ADC) that features an SNR of 82.1dBFS and dissipates only 60mW when operating from a 5V supply. With a 3.3V supply, the ISL73141SEH operates at 750KSPS with a power consumption of 28mW.The product features 1MSPS throughput with no data latency and features excellent linearity and dynamic accuracy. The ISL73141SEH provides a high-speed SPI-compatible serial interface that supports logic ranging from 2.2V t	ISL73141SEHFN/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73100SEHVF Renesas Electronics	1	The ISL73100SEH is a radiation hardened 40V current sense amplifier built on the Renesas proprietary PR40 SOI process. This device has a wide power supply range of 2.7V to 40V. The input common-mode voltage is independent of the supply voltage and extends from -0.3V to 40.0V, making them ideal to use in both high-side and low-side applications.The ISL73100SEH is a trans-conductance amplifier that monitors current using an external sense resistor and outputs a current proportional to the sensed voltage. The	ISL73100SEHVF	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73061SEHX/SAMPLE Renesas Electronics	1	The ISL73061SEH is a radiation hardened single channel load switch featuring ultra-low rON and controlled rise time. This device uses a PMOS pass device as the main switch that operates across an input voltage range of 3V to 5.5V and can support a maximum of 10A continuous current. Simple ON/OFF digital control inputs make the device capable of interfacing directly with low voltage control signals from an FPGA, MCU, or processor. Additional features include reverse current protection to stop current from fl	ISL73061SEHX/SAMPLE	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73002SEHVFE Renesas Electronics	1	The ISL73002SEH is a radiation hardened and SEE hardened high-efficiency monolithic, synchronous buck regulator with integrated MOSFETs. This single-chip power solution operates over an input voltage range of 3V to 5.5V and provides a tightly regulated output voltage that is externally adjustable from 0.8V to ~85% of the input voltage. Output load current capability is primarily determined by PVIN voltage with up to 22A for a single IC at PVIN ≤ 5.5V for TJ ≤ +125 °C. Two ISL73002SEH devices, configured to	ISL73002SEHVFE	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73005SEHVF Renesas Electronics	1	Radiation Hardened Dual Output Point-of-Load, Integrated Synchronous Buck and Low Dropout Regulator	ISL73005SEHVF	3D model available Symbol and footprint not available 1	1 Download Model

	ISL73023SEHMX Renesas Electronics	1	The ISL70023SEH and ISL73023SEH are 100V N-channel enhancement mode GaN power transistors. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for these devices include commercial aerospace, medical, and nuclear power generation. GaN's exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally	ISL73023SEHMX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73020SEHL/PROTO Renesas Electronics	1	40V, 65A Enhancement Mode GaN Power Transistors	ISL73020SEHL/PROTO	3D model available Symbol and footprint not available 1	1 Download Model
	ISL73020SEHX/SAMPLE Renesas Electronics	1	The ISL73020SEH is a 40V N-channel enhancement mode GaN power transistor. This GaN FET has been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for this device include commercial aerospace, medical, and nuclear power generation. The exceptionally high electron mobility and low temperature coefficient of the GaN allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and z	ISL73020SEHX/SAMPLE	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73051ASEHFE/PROTO Renesas Electronics	1	The ISL75051ASEH and ISL73051ASEH are radiation hardened low-voltage, high-current, single-output LDOs specified for up to 3.0A of continuous output current. These devices operate across an input voltage range of 2.2V to 6.0V and can provide output voltages of 0.8V to 5.0V adjustable, based on the resistor divider setting. Dropout voltages as low as 65mV can be achieved using the device. The OCP pin allows the short-circuit output current limit threshold to be programmed by a resistor from the OCP pin to GN	ISL73051ASEHFE/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73096RHVX Renesas Electronics	1	The ISL73096, ISL73127 and ISL73128 are radiation hardened bipolar transistor arrays. The ISL73096 consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127 consists of five NPN transistors on a common substrate. The ISL73128 consists of five PNP transistors on a common substrate. The ISL73096EH, ISL73127EH and ISL73128EH devices encompass all of the production testing of the ISL73096RH, ISL73127RH and ISL73128RH devices and additionally are tested in the Intersil Enhance	ISL73096RHVX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73814SEHVX Renesas Electronics	1	The ISL72814SEH and ISL73814SEH are radiation hardened high-voltage, high-current, driver circuit ICs fabricated using the Renesas proprietary PR40 Silicon-on-Insulator (SOI) process technology to mitigate single-event effects. The devices integrate 16 driver channels that feature a high-voltage (42V), high-current (700mA) open-emitter PNP output stage. To further reduce solution size, the ISL72814SEH and ISL73814SEH integrate a 4-bit, 16-channel decoder with Enable. This conveniently allows you to select 1	ISL73814SEHVX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73096RHX/SAMPLE Renesas Electronics	1	The ISL73096, ISL73127 and ISL73128 are radiation hardened bipolar transistor arrays. The ISL73096 consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127 consists of five NPN transistors on a common substrate. The ISL73128 consists of five PNP transistors on a common substrate. The ISL73096EH, ISL73127EH and ISL73128EH devices encompass all of the production testing of the ISL73096RH, ISL73127RH and ISL73128RH devices and additionally are tested in the Intersil Enhance	ISL73096RHX/SAMPLE	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73051ASEHF/PROTO Intersil Corporation	1	Adjustable Positive LDO Regulator, 0.8V Min, 5V Max, BICMOS, CDFP18	ISL73051ASEHF/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73128EHVF Intersil Corporation	1	RF POWER TRANSISTOR	ISL73128EHVF	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73023SEHML Intersil Corporation	1	Power Field-Effect Transistor	ISL73023SEHML	3D model not available Symbol and footprint not available 0	0 Build or Request
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