MB15_ Model Download Search Results
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W632GU6MB15A
Winbond
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1 | 2Gb DDR3 SDRAM 1333MHz VFBGA96 | BGA | W632GU6MB15A |
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P6SMB15A-AU
PANJIT
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1 | Transient Voltage Suppressors - P6SMB15A-AU , AEC-Q101, UNI, 600W, Min.12.8V, Max.15.8V, SMB | Diodes Moulded | P6SMB15A-AU |
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SMB15J45AHE3-TP
MCC
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1 | 1500 Watt TVS 5.0 to 85 Volts SMB (DO-214AA) (LEAD FRAME) TSTG ℃ Storage Temperature Range -55 to +175 , IFSM 100A | Diodes Moulded | SMB15J45AHE3-TP |
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W631GG6MB15S
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W631GG6MB15S |
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W631GU8MB15A
Winbond
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1 | SDRAM - DDR3L Memory IC 1Gbit Parallel 800 MHz 20 ns 78-VFBGA (10.5x8) | BGA | W631GU8MB15A |
3
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1 | 1500 Watt TVS 5.0 to 85 Volts Temperature Range-55 to +175 ℃ | Diodes Moulded Non Polarised | SMB15J9.0CAHE3-TP |
3
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1 | 1500 Watt TVS 5.0 to 85 Volts Temperature Range -55 to +175 ℃ | Diodes Moulded Non Polarised | SMB15J8.5CAHE3-TP |
3
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ASVMB-150.000MHZ-LY-T
ABRACON
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1 | Oscillator MEMS 150MHz ±10ppm (Stability) 15pF LVCMOS 55% 1.8V/2.5V/3.3V Automotive 4-Pin QFN EP SMD T/R | Other | ASVMB-150.000MHZ-LY-T |
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SMB15J30CAHE3-TP
MCC
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1 | 1500 Watt TVS 5.0 to 85 Volts Temperature Range -55 to +175 ℃ | Diodes Moulded Non Polarised | SMB15J30CAHE3-TP |
3
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1 | 1500 Watt TVS 5.0 to 85 Volts SMB (DO-214AA) (LEAD FRAME) TSTG ℃ Storage Temperature Range -55 to +175 , IFSM 100A | Diodes Moulded Non Polarised | SMB15J8.0CAHE3-TP |
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TPSMB15CA
LITTELFUSE
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1 | Automotive, Surface Mount 600 W in DO-214AA, Bi-Directional | Other | TPSMB15CA |
3
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P6SMB15CA-Q
Bourns
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1 | P6SMB-Q Transient Voltage Suppressor Diode Series, Bi-Directional | Diodes Moulded Non Polarised | P6SMB15CA-Q |
3
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SMB15J43A-TP
MCC
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1 | TVS | Diodes Moulded | SMB15J43A-TP |
3
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SMB15J22AHE3-TP
MCC
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1 | 1500 Watt TVS 5.0 to 85 Volts SMB (DO-214AA) (LEAD FRAME) TSTG ℃ Storage Temperature Range -55 to +175 , IFSM 100A | Diodes Moulded | SMB15J22AHE3-TP |
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W632GG6MB15W
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W632GG6MB15W |
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SMB15J58A-TP
MCC
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1 | TVS | Diodes Moulded | SMB15J58A-TP |
3
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ASFLMB-150.000MHZ-LY-T
ABRACON
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1 | 150 MHz XO (Standard) LVCMOS Oscillator 1.8V ~ 3.3V Standby (Power Down) 4-SMD, No Lead | Other | ASFLMB-150.000MHZ-LY-T |
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TPSMB150A-EVR
LITTELFUSE
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1 | TVS Diode, Surface Mount ? 600 W, Bi-directional, DO-214AA | Other | TPSMB150A-EVR |
3
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P6SMB15CAS
PANJIT
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1 | Transient Voltage Suppressors - P6SMB15CAS , BI, 600W, Min.12.8V, Max.15.8V, SMB | Diodes Moulded Non Polarised | P6SMB15CAS |
3
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TPSMB150CA-EVR
LITTELFUSE
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1 | TVS Diode, Surface Mount ? 600 W, Bi-directional, DO-214AA | Other | TPSMB150CA-EVR |
3
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W632GG8MB15K
Winbond
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1 | DDR3 SDRAM 1333MHz Memory IC 2Gbit Parallel 800 MHz 20 ns 78-VFBGA (10.5x8) | BGA | W632GG8MB15K |
3
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ASVMB150000MHZLYT
ABRACON
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1 | MEMS OSC XO 150.0000MHZ LVCMOS / Tape & Reel (TR) RoHS Compliant: Yes | Other | ASVMB150000MHZLYT |
3
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P6SMB150AJ
Nexperia
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1 | 600 W Transient Voltage Suppressor 7.02 V to 214 V SMB (SOD1002-1) | Diodes Moulded | P6SMB150AJ |
3
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W631GG8MB15S
Winbond
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1 | SDRAM - DDR3 Memory IC 1Gbit Parallel 800 MHz 20 ns 78-VFBGA (10.5x8) | BGA | W631GG8MB15S |
3
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W632GG6MB15A
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W632GG6MB15A |
3
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![Part Image](["https://componentsearchengine.com/2D/0T/19767771.2.1.png",null,null])
![Part Image](["https://www.panjit.com.tw/upload/2023_04_1319/20230413155934rj041dbQI1.jpg","https://www.panjit.com.tw/upload/2023_04_1319/20230413155934rj041dbQI1.jpg",null])
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![Part Image](["https://www.littelfuse.com/~/media/electronics/images/tvs_diodes/littelfuse_tvs_diode_tpsmb_image.jpg.jpg","https://www.littelfuse.com/~/media/electronics/images/tvs_diodes/littelfuse_tvs_diode_tpsmb_image.jpg.jpg",null])
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