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MLV0805E30403T
Vishay
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1 | Vishay MLV - E3 - 3T Series Metal Oxide Varistor 860pF 1A, Clamping 15.5V, Varistor 7.1 → 9.3V 0805 Case | Varistors Chip | MLV0805E30403T |
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SN65MLVD204BRUMT
Texas Instruments
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1 | LVDS Interface IC High noise immunity 100-Mbps M-LVDS transceiver 16-WQFN -40 to 125 | Quad Flat No-Lead | SN65MLVD204BRUMT |
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SN65MLVD203BRUMT
Texas Instruments
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1 | LVDS Interface IC Multipoint-LVDS line driver and receiver (transceiver) with IEC ESD protection 16-WQFN -40 to 125 | Quad Flat No-Lead | SN65MLVD203BRUMT |
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SN65MLVD201DR
Texas Instruments
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1 | Half-Duplex M-LVDS Transceiver | Small Outline Packages | SN65MLVD201DR |
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SN65MLVD207DR
Texas Instruments
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1 | Full-Duplex M-LVDS Transceiver | Small Outline Packages | SN65MLVD207DR |
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SN65MLVD047APWR
Texas Instruments
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1 | Buffers & Line Drivers Multipoint-LVDS Quad Diff Line Driver | Small Outline Packages | SN65MLVD047APWR |
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SN65MLVD207DG4
Texas Instruments
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1 | LVDS Interface IC MultiPnt LVDS | Small Outline Packages | SN65MLVD207DG4 |
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LMH6702WGFLQMLV
Texas Instruments
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1 | 1.7 GHz, Ultra Low Distortion, Wideband Op Amp | Small Outline Packages | LMH6702WGFLQMLV |
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MLVC13V012C1700
Eaton
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1 | Varistors 12VDC 1700PF | Varistors Chip | MLVC13V012C1700 |
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SN65MLVD202BDR
Texas Instruments
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1 | Full-duplex M-LVDS transceiver | Small Outline Packages | SN65MLVD202BDR |
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SMLVN6RGBFU1
ROHM Semiconductor
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1 | Red, Green, Blue (RGB) 621nm Red, 525nm Green, 470nm Blue LED Indication - Discrete 2.1V Red, 3.3V Green, 3.3V Blue 6-SMD, Flat Leads | Other | SMLVN6RGBFU1 |
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SN65MLVD082DGGG4
Texas Instruments
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1 | LVDS Interface IC 8-Ch Half-Duplex M-LVDS Transceiver | Small Outline Packages | SN65MLVD082DGGG4 |
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SN65MLVD128DGG
Texas Instruments
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1 | 1:8 LVTTL to M-LVDS Repeater | Small Outline Packages | SN65MLVD128DGG |
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RMLV0816BGSA-4S2#AA0
Renesas Electronics
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1 | The RMLV0816BGSA is a family of 8-Mbit static RAMs organized 524, 288-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0816BGSA has realized higher density, higher performance and low power consumption. The RMLV0816BGSA offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 48pin TSOP (I). | Small Outline Packages | RMLV0816BGSA-4S2#AA0 |
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RMLV0416EGSB-4S2#AA1
Renesas Electronics
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1 | The RMLV0416E Series is a family of 4-Mbit static RAMs organized 262, 144-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0416E Series has realized higher density, higher performance and low power consumption. The RMLV0416E Series offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 44-pin TSOP (II) or 48-ball fine pitch ball grid array. | Small Outline Packages | RMLV0416EGSB-4S2#AA1 |
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RMLV1616AGSA-4U2#AA0
Renesas Electronics
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1 | The RMLV1616A-U Series is a family of 16-Mbit asynchronous SRAMs organized 1,048,576-word × 16-bit.The RMLV1616A-U Series has realized higher soft error immunity compared to typical SRAMs with on-chip ECC, archived by Renesas’s unique Advanced LPSRAM technologies. Therefore, it is suitable for battery backup systems.It is offered in 48pin TSOP (I) or 48-ball fine pitch ball grid array. | Small Outline Packages | RMLV1616AGSA-4U2#AA0 |
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RMLV3216AGSD-5S2#AA0
Renesas Electronics
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1 | The RMLV3216A Series is a family of 32-Mbit static RAMs organized 2, 097, 152-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV3216A Series has realized higher density, higher performance and low power consumption. The RMLV3216A Series offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 48pin TSOP (I), 52pin TSOP (II) or 48-ball fine pitch ball grid array. | Small Outline Packages | RMLV3216AGSD-5S2#AA0 |
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RMLV0408EGSP-4S2#CA0
Renesas Electronics
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1 | The RMLV0408E Series is a family of 4-Mbit static RAMs organized 524, 288-word × 8-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0408E Series has realized higher density, higher performance and low power consumption. The RMLV0408E Series offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 32-pin SOP, 32-pin TSOP (II) or 32-pin sTSOP. | Small Outline Packages | RMLV0408EGSP-4S2#CA0 |
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RMLV0414EGSB-4S2#AA0
Renesas Electronics
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1 | The RMLV0414E Series is a family of 4-Mbit static RAMs organized 262, 144-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0414E Series has realized higher density, higher performance and low power consumption. The RMLV0414E Series offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 44-pin TSOP (II). | Small Outline Packages | RMLV0414EGSB-4S2#AA0 |
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RMLV0816BGSD-4S2#HC0
Renesas Electronics
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1 | The RMLV0816BGSD is a family of 8-Mbit static RAMs organized 524, 288-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0816BGSD has realized higher density, higher performance and low power consumption. The RMLV0816BGSD offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 52pin TSOP (II). | Small Outline Packages | RMLV0816BGSD-4S2#HC0 |
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MLVC13V048C510
Eaton
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1 | MLVC13 MLV, 048A, 62V | Varistors Chip | MLVC13V048C510 |
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MLVC12V024C230
Eaton
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1 | MLVC12 MLV, 024A, 33V | Varistors Chip | MLVC12V024C230 |
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RMLV0416EGBG-4S2#KC0
Renesas Electronics
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1 | The RMLV0416E Series is a family of 4-Mbit static RAMs organized 262, 144-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0416E Series has realized higher density, higher performance and low power consumption. The RMLV0416E Series offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 44-pin TSOP (II) or 48-ball fine pitch ball grid array. | BGA | RMLV0416EGBG-4S2#KC0 |
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RMLV0816BGSB-4S2#AA0
Renesas Electronics
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1 | The RMLV0816BGSB is a family of 8-Mbit static RAMs organized 524, 288-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0816BGSB has realized higher density, higher performance and low power consumption. The RMLV0816BGSB offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 44pin TSOP (II). | Small Outline Packages | RMLV0816BGSB-4S2#AA0 |
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MLVHV0806V250
Eaton
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1 | MLVHV0806,MLV,250A,390V | Varistors Chip | MLVHV0806V250 |
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