MMBT2 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	MMBT2221 Texas Instruments	1	MMBT2221	MMBT2221	3D model not available Symbol and footprint not available 0	0 Build or Request
	MMBT2219A Texas Instruments	1	MMBT2219A	MMBT2219A	3D model not available Symbol and footprint not available 0	0 Build or Request
	MMBT2906 Texas Instruments	1	MMBT2906	MMBT2906	3D model not available Symbol and footprint not available 0	0 Build or Request
	MMBT2484 Texas Instruments	1	MMBT2484	MMBT2484	3D model not available Symbol and footprint not available 0	0 Build or Request

	MMBT2906A Texas Instruments	1	MMBT2906A	MMBT2906A	3D model not available Symbol and footprint not available 0	0 Build or Request
	MMBT2907 Shenzhen Heketai Electronics Co Ltd	1	PNP bipolar transistor in SOT-23 package, complementary to MMBT2222, with -60V collector-base and collector-emitter voltage, -600mA collector current, 250mW power dissipation, and DC current gain ranging from 100 to 300.	MMBT2907	3D model not available Symbol and footprint not available 0	0 Build or Request
	MMBT2218A Texas Instruments	1	MMBT2218A	MMBT2218A	3D model not available Symbol and footprint not available 0	0 Build or Request
	MMBT2905 Texas Instruments	1	MMBT2905	MMBT2905	3D model not available Symbol and footprint not available 0	0 Build or Request
	MMBT2924 Texas Instruments	1	MMBT2924	MMBT2924	3D model not available Symbol and footprint not available 0	0 Build or Request
	MMBT2222A-G JCET Group	1	MMBT2222A NPN transistor in SOT-23 package with 40V collector-emitter voltage, 600mA continuous collector current, 300mW power dissipation, and DC current gain ranging from 100 to 300.	MMBT2222A-G	3D model not available Symbol and footprint not available 0	0 Build or Request
	MMBT2907AT JCET Group	1	MMBT2907AT is a PNP transistor in SOT-523 package with -60V collector-base and collector-emitter breakdown voltage, -5V emitter-base breakdown voltage, -600mA collector current, 150mW power dissipation, and DC current gain up to 300.	MMBT2907AT	3D model not available Symbol and footprint not available 0	0 Build or Request
	MMBT2222A 1P JCET Group	1	MMBT2222A is an NPN transistor in SOT-23 package, featuring 40V VCEO, 600mA continuous collector current, 300mW power dissipation, and DC current gain from 100 to 300, suitable for general-purpose switching and amplification applications.	MMBT2222A 1P	3D model not available Symbol and footprint not available 0	0 Build or Request
	MMBT2222AW-R2-00001 PanJit Semiconductor	1	MMBT2222AW-R2-00001	MMBT2222AW-R2-00001	3D model not available Symbol and footprint not available 0	0 Build or Request
	MMBT2905A Texas Instruments	1	MMBT2905A	MMBT2905A	3D model not available Symbol and footprint not available 0	0 Build or Request
	MMBT2904A Texas Instruments	1	MMBT2904A	MMBT2904A	3D model not available Symbol and footprint not available 0	0 Build or Request

	MMBT2710 Texas Instruments	1	MMBT2710	MMBT2710	3D model not available Symbol and footprint not available 0	0 Build or Request
	MMBT2222AT JCET Group	1	MMBT2222AT is an NPN transistor in a SOT-523 plastic package, featuring a collector-emitter voltage of 40V, collector current of 600mA, DC current gain up to 300, and transition frequency of 300MHz.	MMBT2222AT	3D model not available Symbol and footprint not available 0	0 Build or Request
	MMBT2907A Shenzhen Heketai Electronics Co Ltd	1	PNP bipolar transistor in SOT-23 package, complementary to MMBT2222, with -60 V collector-base and collector-emitter voltage, -600 mA collector current, 250 mW power dissipation, and DC current gain ranging from 100 to 300.	MMBT2907A	3D model not available Symbol and footprint not available 0	0 Build or Request
	MMBT2222A AK Semiconductor	1	MMBT2222A SOT-23 NPN transistor with 40V VCEO, 600mA continuous collector current, 150°C operating junction temperature, and 300MHz transition frequency in a compact surface-mount package.	MMBT2222A	3D model not available Symbol and footprint not available 0	0 Build or Request
	MMBT2907A(RANGE:100-300) JCET Group	1	MMBT2907A is a PNP transistor in SOT-23 package with -60V collector-base and collector-emitter voltage, -600mA continuous collector current, 250mW power dissipation, and DC current gain up to 300.	MMBT2907A(RANGE:100-300)	3D model not available Symbol and footprint not available 0	0 Build or Request
	MMBT2222AW-R2-10001 PanJit Semiconductor	1	MMBT2222AW-R2-10001	MMBT2222AW-R2-10001	3D model not available Symbol and footprint not available 0	0 Build or Request
	MMBT2221A Texas Instruments	1	MMBT2221A	MMBT2221A	3D model not available Symbol and footprint not available 0	0 Build or Request
	MMBT2907 JCET Group	1	MMBT2907 PNP transistor in SOT-23 package with -40V collector-emitter voltage, -600mA continuous collector current, 250mW power dissipation, and DC current gain up to 300.	MMBT2907	3D model not available Symbol and footprint not available 0	0 Build or Request
	MMBT2904 Texas Instruments	1	MMBT2904	MMBT2904	3D model not available Symbol and footprint not available 0	0 Build or Request
	MMBT2222AM JCET Group	1	MMBT2222AM is an NPN epitaxial planar transistor in a SOT-723 package with 40V collector-emitter breakdown voltage, 0.5A continuous collector current, and 300MHz transition frequency, suitable for high-speed switching and amplification applications.	MMBT2222AM	3D model not available Symbol and footprint not available 0	0 Build or Request
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