NCE30 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	NCE30H11K NCEPOWER	1	NCE30H11K is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 110A continuous drain current, and low on-resistance of 2.6mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications.	NCE30H11K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3008M NCEPOWER	1	NCE3008M is an N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 8A continuous drain current, and low on-resistance of 22.5mΩ at 10V VGS, suitable for battery protection and switching applications.	NCE3008M	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30H10K NCEPOWER	1	NCE30H10K is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 100A continuous drain current, and low on-resistance of 4.0mΩ typical at 10V gate-source voltage, using advanced trench technology for high efficiency switching applications.	NCE30H10K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30P85K NCEPOWER	1	NCE30P85K is a P-channel enhancement mode power MOSFET with -30V drain-source voltage, -85A continuous drain current, and low on-resistance of 5.3mOhm typical at VGS=-10V, utilizing advanced trench technology for high efficiency in switching applications.	NCE30P85K	3D model not available Symbol and footprint not available 0	0 Build or Request

	NCE30P50G NCEPOWER	1	P-Channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -50A continuous drain current, RDS(ON) less than 7mΩ at VGS=-10V, housed in DFN5x6-8L package.	NCE30P50G	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30TD65BP NCEPOWER	1	650V, 30A Trench FSII Fast IGBT with low VCE(sat), high-speed switching, positive temperature coefficient, and tight parameter distribution in a TO-3P package.	NCE30TD65BP	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30TD60BT NCEPOWER	1	600V, 30A Trench FSII Fast IGBT in TO-247 package with low VCE(sat), high-speed switching, positive temperature coefficient, and tight parameter distribution for use in inverters, motor drives, and air conditioning systems.	NCE30TD60BT	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30P12S NCEPOWER	1	30V -12A P-channel enhancement mode power MOSFET with trench technology, offering low RDS(ON) of 13mΩ at VGS=-10V and 21mΩ at VGS=-4.5V, suitable for load switch and PWM applications in surface mount package.	NCE30P12S	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30P15AS NCEPOWER	1	P-Channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -15A continuous drain current, 12mΩ typical RDS(ON) at VGS=-10V, and SOP-8 surface mount package.	NCE30P15AS	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30P06J NCEPOWER	1	P-Channel Enhancement Mode MOSFET with -30V drain-source voltage, -6.5A continuous drain current, 30mΩ typical RDS(ON) at VGS=-10V, and low gate charge, suitable for load switching and PWM applications in a DFN2X2-6L package.	NCE30P06J	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30P16Q NCEPOWER	1	P-Channel Enhancement Mode MOSFET with -30V drain-source voltage, -16A continuous drain current, 18mΩ typical RDS(ON) at VGS=-10V, and 30W power dissipation in a DFN3.3x3.3 package.	NCE30P16Q	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30TD65BT NCEPOWER	1	650V, 30A Trench FSII Fast IGBT in TO-247 package featuring low VCE(sat), high-speed switching, positive temperature coefficient, and tight parameter distribution for motor drives, inverters, and air conditioning systems.	NCE30TD65BT	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30TD120UT NCEPOWER	1	1200V, 30A Trench FSII Fast IGBT with low VCEsat, high-speed switching, positive temperature coefficient, and tight parameter distribution in a TO-247 package.	NCE30TD120UT	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30TD60BF NCEPOWER	1	600V, 30A Trench FSII Fast IGBT with low VCE(sat), high-speed switching, positive temperature coefficient, and tight parameter distribution in a TO-220F package.	NCE30TD60BF	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30TD60B NCEPOWER	1	600V, 30A Trench FSII Fast IGBT with low VCE(sat), high-speed switching, positive temperature coefficient, and tight parameter distribution in a TO-220 package.	NCE30TD60B	3D model not available Symbol and footprint not available 0	0 Build or Request

	NCE30TD60BD NCEPOWER	1	600V, 30A Trench FSII fast IGBT with low VCEsat, high-speed switching, positive temperature coefficient, and integrated diode in TO-263 package.	NCE30TD60BD	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30P10S NCEPOWER	1	P-Channel Enhancement Mode MOSFET with -30V drain-source voltage, -10A continuous drain current, 34mΩ typical RDS(ON) at VGS=-4.5V, and 21mΩ at VGS=-10V, suitable for load switch and PWM applications in SOP-8 package.	NCE30P10S	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3007S VBsemi Electronics Co Ltd	1	P-Channel 30-V, 5.8-A MOSFET with RDS(on) of 42 mΩ at VGS = -10 V, available in DSO-8 package, compliant to RoHS and halogen-free standards.	NCE3007S	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30P25Q NCEPOWER	1	P-Channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -25A continuous drain current, 11mΩ RDS(ON) at VGS=-10V, and 40W power dissipation in a DFN3.3x3.3-8L surface mount package.	NCE30P25Q	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30TD60BP NCEPOWER	1	600V, 30A Trench FSII fast IGBT with low VCE(sat), high-speed switching, positive temperature coefficient, and tight parameter distribution in a TO-3P package.	NCE30TD60BP	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30P30L NCEPOWER	1	P-Channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -30A continuous drain current, 19mΩ RDS(ON) at VGS=-10V, and low gate charge, suitable for high current load applications.	NCE30P30L	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30TD65BD NCEPOWER	1	650V, 30A Trench FSII Fast IGBT in TO-263 package featuring low VCE(sat), high-speed switching, positive temperature coefficient, and tight parameter distribution for use in inverters, motor drives, and air conditioning systems.	NCE30TD65BD	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30TH60BP NCEPOWER	1	600V, 30A Trench FSII Fast IGBT with low VCEsat, high-speed switching, positive temperature coefficient, and tight parameter distribution in a TO-3PNT package.	NCE30TH60BP	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3020Q Wuxi NCE Power Semiconductor	1	NCE N-Channel Enhancement Mode Power MOSFET	NCE3020Q	3D model available Symbol and footprint not available 1	1 Download Model
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