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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	NCE6080AT NCEPOWER	1	NCE6080AT is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 80A continuous drain current, and low on-resistance of 5.5mΩ at VGS=10V, utilizing advanced trench technology for high efficiency and thermal performance in TO-247 package.	NCE6080AT	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P04R NCEPOWER	1	NCE60P04R is a -60V, -4.3A P-channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 120mΩ at VGS=-10V and low gate charge, suitable for load switch and PWM applications.	NCE60P04R	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P70G NCEPOWER	1	NCE60P70G is a -60V, -70A DFN5x6-8L packaged MOSFET with advanced trench technology, providing low RDS(ON) of 11mΩ at VGS=-10V and high current capability for power conversion applications.	NCE60P70G	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6080D NCEPOWER	1	NCE6080D is a 60V, 80A N-channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 6.9 mΩ at VGS = 10V, suitable for PWM and load switching applications.	NCE6080D	3D model not available Symbol and footprint not available 0	0 Build or Request

	NCE6030K NCEPOWER	1	NCE6030K N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 30A continuous drain current, and 23mΩ typical RDS(ON) at 10V VGS, utilizing trench technology for low gate charge and high efficiency in power switching applications.	NCE6030K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P65K NCEPOWER	1	NCE60P65K is a -60V, -65A P-channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of less than 18 mΩ at VGS = -10V and low gate charge, suitable for high current load switching applications.	NCE60P65K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60H15A NCEPOWER	1	60V, 150A NCE60H15A power MOSFET with advanced trench technology, offering RDS(ON) less than 3.1 mΩ at VGS = 10V, suitable for high-frequency switching and power supply applications.	NCE60H15A	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60ND03S NCEPOWER	1	NCE60ND03S is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 3A continuous drain current, and low on-resistance of 78mΩ at 10V VGS, available in SOP-8 surface mount package.	NCE60ND03S	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60H15T NCEPOWER	1	60V, 150A NCE60H15T power MOSFET with advanced trench technology, offering low RDS(ON) of 3.1mΩ at VGS=10V, high current capability, and optimized performance for switching applications in hard-switched and high-frequency circuits.	NCE60H15T	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P82AD NCEPOWER	1	NCE60P82AD is a -60V, -82A trench technology power MOSFET with low RDS(ON) of 13mΩ at VGS=-10V, designed for high current load applications in a TO-263-2L package.	NCE60P82AD	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P09K NCEPOWER	1	P-Channel Enhancement Mode Power MOSFET NCE60P09K with -60V drain-source voltage, -9A continuous drain current, and RDS(ON) less than 220mΩ at VGS=-4.5V, designed for load switch and PWM applications.	NCE60P09K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60H15AT NCEPOWER	1	60V, 150A NCE60H15AT trench technology power MOSFET with RDS(ON) less than 3.1mΩ at VGS=10V, designed for high-density switching applications, offering low gate charge, high EAS, and excellent thermal performance in TO-247 package.	NCE60H15AT	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6050IA NCEPOWER	1	60V, 50A NCE6050IA N-channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 14mΩ at VGS=10V, high density cell design, and excellent thermal performance in TO-251 package.	NCE6050IA	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60NP2012K NCEPOWER	1	NCE60NP2012K is a complementary N-channel and P-channel power MOSFET with 60V drain-source voltage, 20A continuous drain current for N-channel, -12A for P-channel, low on-resistance, and TO-252-4L package.	NCE60NP2012K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6058K NCEPOWER	1	NCE6058K is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 58A continuous drain current, and 8.5mΩ typical RDS(ON) at 10V VGS, using advanced trench technology for low on-resistance and high efficiency.	NCE6058K	3D model not available Symbol and footprint not available 0	0 Build or Request

	NCE60P05R NCEPOWER	1	P-Channel Enhancement Mode MOSFET with -60V drain-source voltage, -5A continuous drain current, RDS(ON) less than 65mΩ at VGS=-10V, low gate charge, suitable for load switch and PWM applications.	NCE60P05R	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60TD120UT NCEPOWER	1	1200V, 60A Trench FSII Fast IGBT in TO-247 package featuring low VCE(sat), high-speed switching, positive temperature coefficient, and tight parameter distribution for reliable performance in UPS and power applications.	NCE60TD120UT	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P45AK NCEPOWER	1	P-Channel Enhancement Mode MOSFET with -60V drain-source voltage, -45A continuous drain current, 35mΩ RDS(ON) at VGS=-10V, and low gate charge, suitable for power switching and high-frequency applications.	NCE60P45AK	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P10K NCEPOWER	1	P-Channel enhancement mode power MOSFET with -60V drain-source voltage, -10A continuous drain current, and RDS(ON) less than 120mΩ at VGS=-10V, suitable for load switch and PWM applications.	NCE60P10K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60TD65BT NCEPOWER	1	650V, 60A Trench FSII Fast IGBT in TO-247-3L package with low VCE(sat), high-speed switching, positive temperature coefficient, and rugged performance for motor drives, inverters, and air conditioning systems.	NCE60TD65BT	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P05BY NCEPOWER	1	P-Channel Enhancement Mode MOSFET with -60V drain-source voltage, -5A continuous drain current, 65mΩ typical RDS(ON) at VGS=-10V, and low gate charge, suitable for load switch and PWM applications in SOT-23-3L package.	NCE60P05BY	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60PD05S NCEPOWER	1	P-Channel Enhancement Mode MOSFET with -60V drain-source voltage, -5A continuous drain current, and 40mΩ typical RDS(ON) at VGS=-10V, housed in SOP-8 package.	NCE60PD05S	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P06S NCEPOWER	1	P-Channel Enhancement Mode Power MOSFET with -60V drain-source voltage, -6A continuous drain current, and 45mΩ typical RDS(ON) at VGS=-10V, housed in SOP-8 package.	NCE60P06S	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60TD65BT4 NCEPOWER	1	650V, 60A Trench FSII Fast IGBT in TO-247-4L package with low VCE(sat), high-speed switching, positive temperature coefficient, and tight parameter distribution for motor drives, inverters, and air conditioning systems.	NCE60TD65BT4	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P16AK NCEPOWER	1	P-Channel Enhancement Mode Power MOSFET with -60V drain-source voltage, -16A continuous drain current, 65mΩ typical RDS(ON) at VGS=-10V, and low gate charge, suitable for load switch and PWM applications.	NCE60P16AK	3D model not available Symbol and footprint not available 0	0 Build or Request
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