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R1QEA Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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R1QEA3618CBG-22IB Renesas Electronics Corporation
1 QDR SRAM R1QEA3618CBG-22IB 0 Build or Request
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R1QEA7218ABB-20RA Renesas Electronics Corporation
1 DDR SRAM R1QEA7218ABB-20RA 0 Build or Request
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R1QEA3618CBB-19IB Renesas Electronics Corporation
1 DDR SRAM R1QEA3618CBB-19IB 0 Build or Request
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R1QEA4436RBG-22IS Renesas Electronics Corporation
1 DDR SRAM R1QEA4436RBG-22IS 0 Build or Request
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R1QEA4418RBG-19IT Renesas Electronics Corporation
1 DDR SRAM R1QEA4418RBG-19IT 0 Build or Request
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R1QEA3618CBG-22IT Renesas Electronics Corporation
1 QDR SRAM R1QEA3618CBG-22IT 0 Build or Request
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R1QEA7236ABG-22RT Renesas Electronics Corporation
1 DDR SRAM R1QEA7236ABG-22RT 0 Build or Request
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R1QEA7218ABG-20RT Renesas Electronics Corporation
1 DDR SRAM R1QEA7218ABG-20RT 0 Build or Request
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R1QEA7218ABB-19RT Renesas Electronics Corporation
1 DDR SRAM R1QEA7218ABB-19RT 0 Build or Request
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R1QEA7236ABG-19IS Renesas Electronics Corporation
1 DDR SRAM R1QEA7236ABG-19IS 0 Build or Request
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R1QEA4418RBG-22IB Renesas Electronics Corporation
1 DDR SRAM R1QEA4418RBG-22IB 0 Build or Request
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R1QEA7218ABB-19IA0 Renesas Electronics
1 The R1Q#A7236 is a 2, 097, 152-word by 36-bit and the R1Q#A7218 is a 4, 194, 304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low R1QEA7218ABB-19IA0 0 Build or Request
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R1QEA7218ABB-19IB0 Renesas Electronics
1 The R1Q#A7236 is a 2, 097, 152-word by 36-bit and the R1Q#A7218 is a 4, 194, 304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low R1QEA7218ABB-19IB0 0 Build or Request
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R1QEA3636CBB-20IA0 Renesas Electronics
1 QDRII/DDRII/ QDRII+/DDRII+ SRAM R1QEA3636CBB-20IA0 0 Build or Request
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R1QEA3618CBB-19IA0 Renesas Electronics
1 QDRII/DDRII/ QDRII+/DDRII+ SRAM R1QEA3618CBB-19IA0 0 Build or Request
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R1QEA3618CBB-19IB0 Renesas Electronics
1 QDRII/DDRII/ QDRII+/DDRII+ SRAM R1QEA3618CBB-19IB0 0 Build or Request
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R1QEA7236ABG-20IB0 Renesas Electronics
1 Support is limited to customers who have already adopted these products.DDR II / II+ (Double Data Rate) SRAMs and QDR^(TM) II / II+ (Quad Data Rate) SRAMs are the ideal memory devices for next generation networking and communications systems. These ultra-fast devices can support high bandwidth systems that require memories capable of very high operating frequencies combined with low latencies and full cycle utilization. DDR SRAMs can provide double data rate (DDR) operation on each data pin in write or read R1QEA7236ABG-20IB0 0 Build or Request
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R1QEA7218ABG-20IB0 Renesas Electronics
1 Support is limited to customers who have already adopted these products.DDR II / II+ (Double Data Rate) SRAMs and QDR^(TM) II / II+ (Quad Data Rate) SRAMs are the ideal memory devices for next generation networking and communications systems. These ultra-fast devices can support high bandwidth systems that require memories capable of very high operating frequencies combined with low latencies and full cycle utilization. DDR SRAMs can provide double data rate (DDR) operation on each data pin in write or read R1QEA7218ABG-20IB0 0 Build or Request
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R1QEA7236ABG-20IA0 Renesas Electronics
1 Support is limited to customers who have already adopted these products.DDR II / II+ (Double Data Rate) SRAMs and QDR^(TM) II / II+ (Quad Data Rate) SRAMs are the ideal memory devices for next generation networking and communications systems. These ultra-fast devices can support high bandwidth systems that require memories capable of very high operating frequencies combined with low latencies and full cycle utilization. DDR SRAMs can provide double data rate (DDR) operation on each data pin in write or read R1QEA7236ABG-20IA0 0 Build or Request
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R1QEA7218ABB-22IB Renesas Electronics Corporation
1 DDR SRAM R1QEA7218ABB-22IB 0 Build or Request
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R1QEA3636CBG-20RA Renesas Electronics Corporation
1 QDR SRAM R1QEA3636CBG-20RA 0 Build or Request
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R1QEA3636CBB-19RT Renesas Electronics Corporation
1 DDR SRAM R1QEA3636CBB-19RT 0 Build or Request
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R1QEA7236ABB-20RS Renesas Electronics Corporation
1 DDR SRAM R1QEA7236ABB-20RS 0 Build or Request
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R1QEA7236ABB-20RA Renesas Electronics Corporation
1 DDR SRAM R1QEA7236ABB-20RA 0 Build or Request
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R1QEA3636CBB-19IA Renesas Electronics Corporation
1 DDR SRAM R1QEA3636CBB-19IA 0 Build or Request
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