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Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 ESD Protection Diodes / TVS Diodes 500W 16V 5% Unidir AEC-Q101 Qualified Diodes, Axial Diameter Horizontal Mounting SA16AHE3/54 1 Download Model
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1 Crystals 2.05x1.65x0.45mm size, 16MHz, +/-10ppm, +/-20ppma.-40 to +85C, 8pF Other CX2016SA16000D0FPLG1 1 Download Model
Part Image Part Image 1 26V Clamp 19.6A Ipp Tvs Diode Through Hole DO-15 Diodes, Axial Diameter Horizontal Mounting SA16A-AP 1 Download Model
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71V3556SA166BGGI Renesas Electronics
1 The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. BGA 71V3556SA166BGGI 1 Download Model
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71V3556SA166BG Renesas Electronics
1 The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. BGA 71V3556SA166BG 1 Download Model
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71V35761SA166BGGI8 Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA166BGGI8 1 Download Model
Part Image Part Image 1 Oscillator XO 16MHz ±50ppm 15pF HCMOS/TTL 60% 3.3V 4-Pin Ultra Mini-SMD T/R Other ASA16.000MHZLT3 1 Download Model
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71V3556SA166BQGI8 Renesas Electronics
1 The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. BGA 71V3556SA166BQGI8 1 Download Model
Part Image Part Image 1 26V Clamp 19.6A Ipp Tvs Diode Through Hole DO-15 Diodes, Axial Diameter Horizontal Mounting SA16CA-TP 1 Download Model
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71V3556SA166BGG Renesas Electronics
1 The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. BGA 71V3556SA166BGG 1 Download Model
Part Image Part Image 1 259V Clamp 2A Ipp Tvs Diode Through Hole DO-15 Diodes, Axial Diameter Horizontal Mounting SA160A-BP 1 Download Model
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71V35761SA166BQGI Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA166BQGI 1 Download Model
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71V3558SA166BQGI Renesas Electronics
1 The 71V3558 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3558 contains data I/O, address and control signal registers. BGA 71V3558SA166BQGI 1 Download Model
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71V35761SA166BG Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA166BG 1 Download Model
Part Image Part Image 1 16 MHz XO (Standard) HCMOS Oscillator 3.3V Enable/Disable 4-SMD, No Lead Other ASA-16.000MHZ-L-T 1 Download Model
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71V35761SA166BGI Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA166BGI 1 Download Model
Part Image Part Image 1 MULTILAYER CERAMIC CAPACITORS  [Multilayer Ceramic Capacitors (High dielectric type) for Telecommunications Infrastructure and Industrial Equipment] Other MBASA168AB5106MTNA01 1 Download Model
Part Image Part Image 1 Inductors for high frequency circuits, Multilayer ceramic Other MHQ0402PSA16NJT000 1 Download Model
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2SA1612-T1-A Renesas Electronics
1 Support is limited to customers who have already adopted these products. SOT23 (3-Pin) 2SA1612-T1-A 1 Download Model
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2SA1615-AZ Renesas Electronics
1 Support is limited to customers who have already adopted these products.The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. Transistor Outline, Vertical 2SA1615-AZ 1 Download Model
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71V3556SA166BQG Renesas Electronics
1 The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. BGA 71V3556SA166BQG 1 Download Model
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71V3558SA166BQG8 Renesas Electronics
1 The 71V3558 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3558 contains data I/O, address and control signal registers. BGA 71V3558SA166BQG8 1 Download Model
Part Image Part Image 1 259V Clamp 2A Ipp Tvs Diode Through Hole DO-15 Diodes, Axial Diameter Horizontal Mounting SA160CA-BP 1 Download Model
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71V3556SA166BGI8 Renesas Electronics
1 The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. BGA 71V3556SA166BGI8 1 Download Model
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SA160EE Apex Microtechnology
1 Motor / Motion / Ignition Controllers & Drivers H-Bridge, 80V, 10A cont., Leadform Other SA160EE 1 Download Model
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