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CX2016SA16000D0FPLG1
Kyocera AVX
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1 | Crystals 2.05x1.65x0.45mm size, 16MHz, +/-10ppm, +/-20ppma.-40 to +85C, 8pF | Other | CX2016SA16000D0FPLG1 |
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SA16AHE3/54
Vishay
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1 | ESD Protection Diodes / TVS Diodes 500W 16V 5% Unidir AEC-Q101 Qualified | Diodes, Axial Diameter Horizontal Mounting | SA16AHE3/54 |
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ASA-16.000MHZ-L-T
ABRACON
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1 | 16 MHz XO (Standard) HCMOS Oscillator 3.3V Enable/Disable 4-SMD, No Lead | Other | ASA-16.000MHZ-L-T |
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71V35761SA166BGI
Renesas Electronics
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1 | The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V35761SA166BGI |
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MBASA168AB5106MTNA01
TAIYO YUDEN
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1 | MULTILAYER CERAMIC CAPACITORS [Multilayer Ceramic Capacitors (High dielectric type) for Telecommunications Infrastructure and Industrial Equipment] | Other | MBASA168AB5106MTNA01 |
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71V35761SA166BG
Renesas Electronics
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1 | The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V35761SA166BG |
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71V3558SA166BQGI
Renesas Electronics
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1 | The 71V3558 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3558 contains data I/O, address and control signal registers. | BGA | 71V3558SA166BQGI |
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1 | Inductors for high frequency circuits, Multilayer ceramic | Other | MHQ0402PSA16NJT000 |
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2SA1612-T1-A
Renesas Electronics
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1 | Support is limited to customers who have already adopted these products. | SOT23 (3-Pin) | 2SA1612-T1-A |
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2SA1615-AZ
Renesas Electronics
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1 | Support is limited to customers who have already adopted these products.The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. | Transistor Outline, Vertical | 2SA1615-AZ |
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SA16CA-TP
MCC
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1 | 26V Clamp 19.6A Ipp Tvs Diode Through Hole DO-15 | Diodes, Axial Diameter Horizontal Mounting | SA16CA-TP |
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71V3556SA166BG
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA166BG |
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71V35761SA166BQGI8
Renesas Electronics
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1 | The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V35761SA166BQGI8 |
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71V35761SA166BGGI8
Renesas Electronics
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1 | The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V35761SA166BGGI8 |
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71V3556SA166BGGI
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA166BGGI |
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71V3556SA166BGG
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA166BGG |
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SA16A-AP
MCC
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1 | 26V Clamp 19.6A Ipp Tvs Diode Through Hole DO-15 | Diodes, Axial Diameter Horizontal Mounting | SA16A-AP |
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71V35761SA166BQGI
Renesas Electronics
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1 | The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V35761SA166BQGI |
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SA160A-BP
MCC
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1 | 259V Clamp 2A Ipp Tvs Diode Through Hole DO-15 | Diodes, Axial Diameter Horizontal Mounting | SA160A-BP |
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ASA16.000MHZLT3
ABRACON
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1 | Oscillator XO 16MHz ±50ppm 15pF HCMOS/TTL 60% 3.3V 4-Pin Ultra Mini-SMD T/R | Other | ASA16.000MHZLT3 |
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MSP430G2132IRSA16T
Texas Instruments
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1 | MIXED SIGNAL MICROCONTROLLER | Other | MSP430G2132IRSA16T |
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MSP430G2221IRSA16T
Texas Instruments
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1 | MIXED SIGNAL MICROCONTROLLER | Other | MSP430G2221IRSA16T |
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MSP430G2111IRSA16T
Texas Instruments
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1 | MIXED SIGNAL MICROCONTROLLER | Other | MSP430G2111IRSA16T |
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MSP430G2312IRSA16T
Texas Instruments
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1 | MIXED SIGNAL MICROCONTROLLER | Other | MSP430G2312IRSA16T |
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MSP430G2201IRSA16
Texas Instruments
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1 | MIXED SIGNAL MICROCONTROLLER | Other | MSP430G2201IRSA16 |
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