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ATSAM4SA16BB-MNR
Microchip
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1 | ARM Microcontrollers - MCU 64QFN, GREEN, EXT TEMP(105C), MRL B,1024K FLASH,160K SRAM | Quad Flat No-Lead | ATSAM4SA16BB-MNR |
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TS-1095S-A16B2-C2D1
Yuandi
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1 | NO 6mm Gull Wing 13mm Black Round Button Brick nogging SPST 6mm 180gf@30gf SMD Tactile Switches ROHS | Other | TS-1095S-A16B2-C2D1 |
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71V35761SA166BGGI8
Renesas Electronics
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1 | The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V35761SA166BGGI8 |
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SA16CA-TP
MCC
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1 | 26V Clamp 19.6A Ipp Tvs Diode Through Hole DO-15 | Diodes, Axial Diameter Horizontal Mounting | SA16CA-TP |
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71V3556SA166BG
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA166BG |
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71V3556SA166BQGI8
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA166BQGI8 |
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SA16A-AP
MCC
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1 | 26V Clamp 19.6A Ipp Tvs Diode Through Hole DO-15 | Diodes, Axial Diameter Horizontal Mounting | SA16A-AP |
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71V3556SA166BGG
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA166BGG |
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71V3556SA166BGGI
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA166BGGI |
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71V35761SA166BQGI
Renesas Electronics
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1 | The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V35761SA166BQGI |
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SA160A-BP
MCC
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1 | 259V Clamp 2A Ipp Tvs Diode Through Hole DO-15 | Diodes, Axial Diameter Horizontal Mounting | SA160A-BP |
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ASA16.000MHZLT3
ABRACON
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1 | Oscillator XO 16MHz ±50ppm 15pF HCMOS/TTL 60% 3.3V 4-Pin Ultra Mini-SMD T/R | Other | ASA16.000MHZLT3 |
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SA160EEA
Apex Microtechnology
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1 | Motor/Motion/Ignition Controllers & Drivers H-Bridge, 80V, 14A cont., Leadform | Other | SA160EEA |
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71V3556SA166BQG
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA166BQG |
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71V3556SA166BGI8
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA166BGI8 |
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MBASA168BB5226MTNA01
TAIYO YUDEN
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1 | MULTILAYER CERAMIC CAPACITORS [Multilayer Ceramic Capacitors (High dielectric type) for Telecommunications Infrastructure and Industrial Equipment] | Other | MBASA168BB5226MTNA01 |
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SA160EE
Apex Microtechnology
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1 | Motor / Motion / Ignition Controllers & Drivers H-Bridge, 80V, 10A cont., Leadform | Other | SA160EE |
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71V3556SA166BGG8
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA166BGG8 |
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SIT8944BEB83-33SA16.000000
SiTime
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1 | 1 – 110 MHz, -55 to 125°C, Endura™ Series Oscillator, 7 x 5mm Package | Other | SIT8944BEB83-33SA16.000000 |
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SA160CA-BP
MCC
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1 | 259V Clamp 2A Ipp Tvs Diode Through Hole DO-15 | Diodes, Axial Diameter Horizontal Mounting | SA160CA-BP |
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71V3558SA166BQG8
Renesas Electronics
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1 | The 71V3558 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3558 contains data I/O, address and control signal registers. | BGA | 71V3558SA166BQG8 |
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71V35761SA166BGG8
Renesas Electronics
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1 | The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V35761SA166BGG8 |
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2SA1611-T1-A
Renesas Electronics
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1 | Support is limited to customers who have already adopted these products. | SOT23 (3-Pin) | 2SA1611-T1-A |
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71V3558SA166BQGI8
Renesas Electronics
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1 | The 71V3558 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3558 contains data I/O, address and control signal registers. | BGA | 71V3558SA166BQGI8 |
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71V35761SA166BGGI
Renesas Electronics
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1 | The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V35761SA166BGGI |
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