2N7002K Model Download Search Results

Showing 25 of 314 results

Price & Stock Powered by Findchips

Filter by Manufacturer

Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image
2N7002K1DW-H Formosa Microsemi Co Ltd
1 Small Signal Field-Effect Transistor 2N7002K1DW-H 0 Build or Request
Part Image Part Image
2N7002KT1E3 Vishay Dale
0 XSTR BS870 SOT 23 2N7002KT1E3 0 Build or Request
Part Image Part Image
2N7002KB VBsemi Electronics Co Ltd
1 N-Channel 60-V MOSFET in SOT-23 package with 2.8 ohm typical RDS(on) at 10 V VGS, 250 mA continuous drain current, low gate threshold voltage of 2 V, and 25 pF input capacitance, suitable for high-speed switching applications. 2N7002KB 0 Build or Request
Part Image Part Image
2N7002K 72K JCET Group
1 N-channel MOSFET in SOT-23 package with 60 V drain-source voltage, 340 mA drain current, 0.35 W power dissipation, and low on-resistance of 5 ohms at 10 V gate-source voltage. 2N7002K 72K 0 Build or Request
Part Image Part Image 1 UL 94 V-0, low RDS(ON), ESD Protected. VDS 60V, VGS ±20V, ID 340mA, Pd 150mW, TJ 150°C, RθJA 820°C/W. 2N7002KDW 0 Build or Request
Part Image Part Image
2N7002K4DW Formosa Microsemi Co Ltd
1 Small Signal Field-Effect Transistor 2N7002K4DW 0 Build or Request
Part Image Part Image
2N7002KDW JCET Group
1 N-channel MOSFET in SOT-363 package with 60V drain-source voltage, 340mA drain current, 5.3 ohm typical RDS(on) at 4.5V VGS, and ESD protection for use in load switches and DC/DC converters. 2N7002KDW 0 Build or Request
Part Image Part Image
2N7002KW AK Semiconductor
1 N-Channel enhancement MOSFET in SOT-323 package with 60V drain-source voltage, 300mA continuous drain current, 350mW power dissipation, and 2.5V maximum gate threshold voltage, featuring low on-resistance and fast switching speed. 2N7002KW 0 Build or Request
Part Image Part Image
2N7002KTB89 PanJit Semiconductor
1 Small Signal Field-Effect Transistor 2N7002KTB89 0 Build or Request
Part Image Part Image
2N7002K-H Formosa Microsemi Co Ltd
1 Small Signal Field-Effect Transistor, 0.3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET 2N7002K-H 0 Build or Request
Part Image Part Image
2N7002KF2 Yangzhou Yangjie Electronics Co Ltd
1 Small Signal Field-Effect Transistor, 0.34A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 2N7002KF2 0 Build or Request
Part Image Part Image
2N7002KW-R2-10001 PanJit Semiconductor
1 Transistor 2N7002KW-R2-10001 0 Build or Request
Part Image Part Image
2N7002K1-G Microchip Technology Inc
1 Small Signal Field-Effect Transistor, 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB 2N7002K1-G 0 Build or Request
Part Image Part Image
2N7002K1DW Formosa Microsemi Co Ltd
1 Small Signal Field-Effect Transistor 2N7002K1DW 0 Build or Request
Part Image Part Image
2N7002KDW-R1-10001 PanJit Semiconductor
1 Transistor 2N7002KDW-R1-10001 0 Build or Request
Part Image Part Image
2N7002KM Shikues Semiconductor
1 High Density Cell Design for Low RDS(ON), Voltage Controlled Small Signal Switch, Small Outline Surface Mount Package, RoHS compliant / Green EMC. 2N7002KM 0 Build or Request
Part Image Part Image 1 N-Channel MOSFET, 60V, 340mA, SOT-323, Low RDS(on), ESD protected, Load Switch, DC/DC Converter. 2N7002KW 0 Build or Request
Part Image Part Image
2N7002KDW CREATEK Microelectronics
1 Dual N-Channel MOSFET in SOT-363 package, 60 V drain-source voltage, 340 mA continuous drain current, 1.4 ohm typical on-resistance at 4.5 V gate drive, RoHS compliant, ESD protected gate, suitable for load switching and power management applications. 2N7002KDW 0 Build or Request
Part Image Part Image
2N7002K1-G Supertex Inc
1 Small Signal Field-Effect Transistor, 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB 2N7002K1-G 0 Build or Request
Part Image Part Image
2N7002K4DW-H Formosa Microsemi Co Ltd
1 Small Signal Field-Effect Transistor 2N7002K4DW-H 0 Build or Request
Part Image Part Image
2N7002KW JCET Group
1 N-channel MOSFET in SOT-323 package with 60 V drain-source voltage, 340 mA continuous drain current, 0.2 W power dissipation, and low RDS(on) of 1.1 ohms at VGS = 4.5 V. 2N7002KW 0 Build or Request
Part Image Part Image
2N7002KWS-TP Micro Commercial Components
1 Small Signal Field-Effect Transistor, 0.23A I(D), 60V 2N7002KWS-TP 0 Build or Request
Part Image Part Image
2N7002KT Shenzhen Heketai Electronics Co Ltd
1 N-channel MOSFET in SOT-523 package with 60 V drain-source voltage, 340 mA continuous drain current, low on-resistance, fast switching speed, and 0.15 W power dissipation. 2N7002KT 0 Build or Request
Part Image Part Image
2N7002KT CREATEK Microelectronics
1 N-channel MOSFET in SOT-523 package with 60 V drain-source voltage, 340 mA continuous drain current, 0.95 ohm on-resistance at 10 V gate voltage, and ESD protection of 2 kV HBM. 2N7002KT 0 Build or Request
Part Image Part Image
2N7002K1 Microchip Technology Inc
1 Small Signal Field-Effect Transistor, 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB 2N7002K1 0 Build or Request
Can't find what you're looking for? Request this part