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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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226276-0202
Molex
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1 | VersaPower Board-to-Board Receptacle, 0.30mm Pitch, 0.60mm Height, 20 Signal Pin + 8 Power Pin + 1 Fitting Nail, 8 Reels/Carton | Other | 226276-0202 |
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744760247A
Würth Elektronik
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1 | WE-RFI SMT Ferrite Inductor Size 0805; L = 0.47 µH ±5%; Qmin = 45; RDCmax = 0.5 Ω | Other | 744760247A |
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09661137602
HARTING
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1 | D-Sub 9pin female angled 2.84mm pitch, stamped, w/o board locks, 4-40UNC, PL3 | Other | 09661137602 |
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1719760211
Molex
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1 | 2.54mm Pitch SL Header, Single Row, Right-Angle, LCP, Shrouded, Surface Mount, 0.75µm Selective Gold (Au) Plating, 11 Circuits | Other | 1719760211 |
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1719760220
Molex
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1 | 2.54mm Pitch SL Header, Single Row, Right-Angle, LCP, Shrouded, Surface Mount, 0.75µm Selective Gold (Au) Plating, 20 Circuits | Other | 1719760220 |
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71V67602S133PFG8
Renesas Electronics
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1 | The 71V67602 3.3V CMOS SRAM is organized as 256K x 36. The 71V676 SRAM contains write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write cycle. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. | Quad Flat Packages | 71V67602S133PFG8 |
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215760-2008
Molex
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1 | Micro-Fit+ Right-Angle Header, 3.00mm Pitch, Single Row, 8 Circuits, UL 94V-0, Glow-Wire Capable, Black | Other | 215760-2008 |
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71V67602S133PFG
Renesas Electronics
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1 | The 71V67602 3.3V CMOS SRAM is organized as 256K x 36. The 71V676 SRAM contains write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write cycle. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. | Quad Flat Packages | 71V67602S133PFG |
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71V67602S166BGG
Renesas Electronics
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1 | The 71V67602 3.3V CMOS SRAM is organized as 256K x 36. The 71V676 SRAM contains write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write cycle. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V67602S166BGG |
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2157602004
Molex
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1 | Micro-Fit+ Right-Angle Header, Through Hole, 3.00mm Pitch, Single Row, 4 Circuits, 0.38µm Gold (Au) Plating, Glow-Wire Capable, Black | Other | 2157602004 |
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7602-602NLF
CTS
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1 | UL Recognized 30 AMP C Filtered Terminal Block, 2 Position, #8-32, UL94V-0 | Other | 7602-602NLF |
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1719760209
Molex
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1 | 2.54mm Pitch SL Header, Single Row, Right-Angle, LCP, Shrouded, Surface Mount, 0.75µm Selective Gold (Au) Plating, 9 Circuits | Other | 1719760209 |
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1719760216
Molex
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1 | 2.54mm Pitch SL Header, Single Row, Right-Angle, LCP, Shrouded, Surface Mount, 0.75µm Selective Gold (Au) Plating, 16 Circuits | Other | 1719760216 |
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1719760223
Molex
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1 | 2.54mm Pitch SL Header, Single Row, Right-Angle, LCP, Shrouded, Surface Mount, 0.75µm Selective Gold (Au) Plating, 23 Circuits | Other | 1719760223 |
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09663137602
HARTING
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1 | D-Sub 25pin female angled 2.84mm pitch, stamped, w/o board locks, 4-40UNC, PL3 | Other | 09663137602 |
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1719760207
Molex
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1 | 2.54mm Pitch SL Header, Single Row, Right-Angle, LCP, Shrouded, Surface Mount, 0.75µm Selective Gold (Au) Plating, 7 Circuits | Other | 1719760207 |
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215760-2002
Molex
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1 | Micro-Fit+ Right-Angle Header, 3.00mm Pitch, Single Row, 2 Circuits, UL 94V-0, Glow-Wire Capable, Black | Other | 215760-2002 |
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0877602278
Molex
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1 | 2.00mm Pitch Milli-Grid Header, Right-Angle, Through Hole, 22 Circuits, 0.38µm Gold (Au) Plating, Mating Pin Length 4.00mm, Tail Length 2.16mm, Tray, Lead-Free | Other | 0877602278 |
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215760-2003
Molex
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1 | Micro-Fit+ Right-Angle Header, 3.00mm Pitch, Single Row, 3 Circuits, Matte Tin (Sn) Plating, UL 94V-0, Glow-Wire Capable, Black | Other | 215760-2003 |
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AXK760247A
Panasonic
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1 | Board to Board & Mezzanine Connectors P4(0.4mm pitch) | Other | AXK760247A |
3
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0877602418
Molex
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1 | 2.00mm Pitch Milli-Grid Header, Right-Angle, Through Hole, 24 Circuits, 2.54µm Tin (Sn) Plating, Mating Pin Length 4.00mm, Tail Length 2.60mm, Tray, Lead-Free | Other | 0877602418 |
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744760282C
Würth Elektronik
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1 | Wurth WE-KI Series Wire-wound SMD Inductor with a Ceramic Core, 0.82 μH ±5% 180mA Idc Q:23 | Other | 744760282C |
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744760227C
Würth Elektronik
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1 | SMD Wire Wound Ceramic Inductor WE-KI | Other | 744760227C |
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71V67602S150PFGI
Renesas Electronics
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1 | The 71V67602 3.3V CMOS SRAM is organized as 256K x 36. The 71V676 SRAM contains write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write cycle. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. | Quad Flat Packages | 71V67602S150PFGI |
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53476-0210
Molex
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1 | Headers & Wire Housings 2.50MM HDR 02P VT TH GLO | Other | 53476-0210 |
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