CE-60 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	SG-9101CE60.0003M-D15PGDCC0 Seiko Epson Corporation	1	CMOS Output Clock Oscillator, 60.0003MHz Nom	SG-9101CE60.0003M-D15PGDCC0	3D model not available Symbol and footprint not available 0	0 Build or Request
	SG-9101CE60.606060M-D10SGDCA0 Seiko Epson Corporation	1	CMOS Output Clock Oscillator, 60.60606MHz Nom	SG-9101CE60.606060M-D10SGDCA0	3D model not available Symbol and footprint not available 0	0 Build or Request
	MBB0207CE6042BC100 Vishay Intertechnologies	1	Fixed Resistor, Metal Film, 0.4W, 60400ohm, 350V, 0.1% +/-Tol, 15ppm/Cel, Through Hole Mount, AXIAL LEADED	MBB0207CE6042BC100	3D model not available Symbol and footprint not available 0	0 Build or Request
	AZ733-2CE-60DF American ZETTLER Inc	1	Power/Signal Relay	AZ733-2CE-60DF	3D model not available Symbol and footprint not available 0	0 Build or Request

	SMCJLCE60A Microsemi Corporation (now Microchip)	1	Trans Voltage Suppressor Diode, 1500W, 60V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB	SMCJLCE60A	3D model not available Symbol and footprint not available 0	0 Build or Request
	SG-9101CE60.606060M-D10SGDAA0 Seiko Epson Corporation	1	CMOS Output Clock Oscillator, 60.60606MHz Nom	SG-9101CE60.606060M-D10SGDAA0	3D model not available Symbol and footprint not available 0	0 Build or Request
	SG-9101CE60.7870M-D30SGDACB Seiko Epson Corporation	1	CMOS Output Clock Oscillator, 60.787MHz Nom	SG-9101CE60.7870M-D30SGDACB	3D model not available Symbol and footprint not available 0	0 Build or Request
	SG-9101CE60.606060M-D40SHAACB Seiko Epson Corporation	1	CMOS Output Clock Oscillator, 60.60606MHz Nom	SG-9101CE60.606060M-D40SHAACB	3D model not available Symbol and footprint not available 0	0 Build or Request
	SG-9101CE60.0003M-D15PGDACB Seiko Epson Corporation	1	CMOS Output Clock Oscillator, 60.0003MHz Nom	SG-9101CE60.0003M-D15PGDACB	3D model not available Symbol and footprint not available 0	0 Build or Request
	SG-9101CE60.606060M-D40SHACA0 Seiko Epson Corporation	1	CMOS Output Clock Oscillator, 60.60606MHz Nom	SG-9101CE60.606060M-D40SHACA0	3D model not available Symbol and footprint not available 0	0 Build or Request
	SG-9101CE6.0000M-C15SHAAAB Seiko Epson Corporation	1	CMOS Output Clock Oscillator, 6MHz Nom	SG-9101CE6.0000M-C15SHAAAB	3D model not available Symbol and footprint not available 0	0 Build or Request
	892-1BH-F-C-E-60VDC Song Chuan Precision Company	1	Power/Signal Relay, SPST, Latched, 96VDC (Coil), Random, AC Output	892-1BH-F-C-E-60VDC	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60ND45AG NCEPOWER	1	60V, 45A NCE60ND45AG trench MOSFET with 9.4mΩ RDS(ON) at VGS=10V, DFN5x6-8L package, designed for high-frequency switching, synchronous rectification, and DC/DC conversion applications.	NCE60ND45AG	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P07AS NCEPOWER	1	P-Channel Enhancement Mode Power MOSFET with -60V drain-source voltage, -7A continuous drain current, 65mΩ typical RDS(ON) at VGS=-10V, and low gate charge, suitable for load switch and PWM applications in SOP-8 package.	NCE60P07AS	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P25 NCEPOWER	1	P-Channel Enhancement Mode Power MOSFET with -60V drain-source voltage, -25A continuous drain current, and 39mΩ typical RDS(ON) at VGS=-10V, featuring low gate charge and high current load capability.	NCE60P25	3D model not available Symbol and footprint not available 0	0 Build or Request

	NCE60H30T NCEPOWER	1	NCE60H30T is a 60V, 300A trench power MOSFET with low RDS(ON) of 1.8mΩ at VGS=10V, designed for high-frequency switching applications, featuring high avalanche energy, low gate charge, and excellent thermal dissipation in TO-247 package.	NCE60H30T	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P45K NCEPOWER	1	P-Channel Enhancement Mode MOSFET with -60V drain-source voltage, -45A continuous drain current, and 31mΩ typical RDS(ON) at -10V VGS, suitable for power switching and high-frequency applications.	NCE60P45K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60NP4035K NCEPOWER	1	NCE60NP4035K is a complementary N-channel and P-channel power MOSFET with 60V VDS, 40A ID for N-channel and -35A ID for P-channel, featuring low RDS(ON) of 15.5mΩ and 35mΩ respectively, in a TO-252-4L package.	NCE60NP4035K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6080 NCEPOWER	1	NCE6080 is a channel enhancement mode power MOSFET with 60V drain-source voltage, 80A continuous drain current, and low on-resistance of 8.5mΩ at 10V gate-source voltage, suitable for PWM and load switching applications.	NCE6080	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60ND03N NCEPOWER	1	NCE60ND03N is a channel enhancement mode power MOSFET with 60V drain-source voltage, 3A continuous drain current, and low on-resistance of 84mΩ at 10V VGS, suitable for battery protection and switching applications in SOT23-6L surface mount package.	NCE60ND03N	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60T2K2K NCEPOWER	1	NCE60T2K2I and NCE60T2K2K are N-channel super junction power MOSFETs with 600 V drain-source voltage, 2 A continuous drain current, 1.8 ohm typical RDS(on), and low gate charge, available in TO-251 and TO-252 packages.	NCE60T2K2K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6009AS NCEPOWER	1	NCE6009AS is an N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 9A continuous drain current, and low on-resistance of 11mΩ typical at 10V gate-source voltage, suitable for power switching and load switch applications.	NCE6009AS	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6005AN NCEPOWER	1	NCE6005AN is a 60V, 5A N-channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 26 mΩ at VGS=10V and low gate charge, suitable for high-frequency switching applications.	NCE6005AN	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60NP2016G NCEPOWER	1	NCE60NP2016G is a dual N- and P-channel trench MOSFET with 60 V drain-source voltage, 20 A continuous drain current, low RDS(ON) of 28 mΩ (N-channel) and 60 mΩ (P-channel), available in DFN5x6-8L package.	NCE60NP2016G	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60H15AD NCEPOWER	1	NCE60H15AD is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 150A continuous drain current, and ultralow RDS(ON) of 2.8mΩ at VGS=10V, designed for high-frequency switching and power supply applications.	NCE60H15AD	3D model not available Symbol and footprint not available 0	0 Build or Request
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