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IRF840A
Samsung Semiconductor
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1 | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF840A |
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IRF840ASTRRPBF
Vishay Siliconix
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1 | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | IRF840ASTRRPBF |
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SIHF840AS-GE3
Vishay Siliconix
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1 | TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power | SIHF840AS-GE3 |
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IRF840ALPBF
International Rectifier
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1 | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | IRF840ALPBF |
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IRF840APBF
International Rectifier
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1 | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF840APBF |
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