IBC20 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	IRFIBC20G-003 International Rectifier	1	Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRFIBC20G-003	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRG4IBC20WPBF International Rectifier	1	Insulated Gate Bipolar Transistor, 11.8A I(C), 600V V(BR)CES, N-Channel, TO-220AB		IRG4IBC20WPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFIBC20G-031 International Rectifier	1	Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRFIBC20G-031	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFIBC20G-019PBF International Rectifier	1	Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRFIBC20G-019PBF	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRFIBC20G-024 International Rectifier	1	Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRFIBC20G-024	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRG4IBC20KDPBF Infineon Technologies AG	1	Insulated Gate Bipolar Transistor, 11.5A I(C), 600V V(BR)CES, N-Channel, TO-220AB		IRG4IBC20KDPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFIBC20G-002PBF International Rectifier	1	Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRFIBC20G-002PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRG4IBC20UDPBF Infineon Technologies AG	1	Insulated Gate Bipolar Transistor, 11.4A I(C), 600V V(BR)CES, N-Channel, TO-220AB		IRG4IBC20UDPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFIBC20G-012PBF International Rectifier	1	Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRFIBC20G-012PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFIBC20G-013PBF International Rectifier	1	Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRFIBC20G-013PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFIBC20G-029 International Rectifier	1	Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRFIBC20G-029	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFIBC20G-009PBF International Rectifier	1	Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRFIBC20G-009PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRG4IBC20FD International Rectifier	1	Insulated Gate Bipolar Transistor, 14.3A I(C), 600V V(BR)CES, N-Channel, TO-220AB		IRG4IBC20FD	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRG4IBC20W Infineon Technologies AG	1	Insulated Gate Bipolar Transistor, 11.8A I(C), 600V V(BR)CES, N-Channel, TO-220AB		IRG4IBC20W	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFIBC20G-030 International Rectifier	1	Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRFIBC20G-030	3D model not available Symbol and footprint not available 0	0 Build or Request

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