IPB60 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	IPB60R199CPAATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB60R199CPAATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R045P7 Infineon Technologies AG	1	Power Field-Effect Transistor, 61A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB60R045P7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R199CPAXT Infineon Technologies AG	1	Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB60R199CPAXT	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R280CFD7ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 9A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-263AB		IPB60R280CFD7ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request

	IPB60R199CPA Infineon Technologies AG	1	Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB60R199CPA	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R099CS Infineon Technologies AG	1	Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB60R099CS	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R299CPATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB60R299CPATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R520CPATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB60R520CPATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R299CPXT Infineon Technologies AG	1	Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB60R299CPXT	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R280CFD7 Infineon Technologies AG	1	Power Field-Effect Transistor, 9A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB60R280CFD7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R380P6 Infineon Technologies AG	1	Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB60R380P6	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R125CP Infineon Technologies AG	1	Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB60R125CP	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R125CPATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB60R125CPATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R160P6 Infineon Technologies AG	1	Power Field-Effect Transistor, 23.8A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB60R160P6	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R600C6 Infineon Technologies AG	1	Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB60R600C6	3D model not available Symbol and footprint not available 0	0 Build or Request

	IPB60R950C6 Infineon Technologies AG	1	Power Field-Effect Transistor, 4.4A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB60R950C6	3D model not available Symbol and footprint not available 0	0 Build or Request
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