IPD50 Model Download Search Results
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IPD50N06S2L-13
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 50A I(D), 55V, 0.0167ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | IPD50N06S2L-13 |
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IPD50N12S3L15ATMA1
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 50A I(D), 120V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | IPD50N12S3L15ATMA1 |
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IPD50N12S3L-15
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 50A I(D), 120V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | IPD50N12S3L-15 |
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IPD50R1K4CEAUMA1
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 4.8A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | IPD50R1K4CEAUMA1 |
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IPD50N06S309ATMA1
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 50A I(D), 55V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | IPD50N06S309ATMA1 |
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IPD50R950CEATMA1
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | IPD50R950CEATMA1 |
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IPD50R650CE
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 500V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | IPD50R650CE |
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IPD50N08S413ATMA1
Infineon
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1 | 80 V, N-Ch, 13.2 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2 | IPD50N08S413ATMA1 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to252_4.jpg"])
![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/1588_TO252-3.jpg"])
![Part Image](["https://componentsearchengine.com/Images/1/IPD50N08S413ATMA1.jpg",null,null])
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