IPD50 Model Download Search Results
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IPD50N06S309ATMA1
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 50A I(D), 55V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | IPD50N06S309ATMA1 |
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IPD50R520CP
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 7.1A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | IPD50R520CP |
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IPD50R2K0CEBTMA1
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 2.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | IPD50R2K0CEBTMA1 |
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IPD50R650CE
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 500V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | IPD50R650CE |
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IPD50R1K4CEAUMA1
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 4.8A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | IPD50R1K4CEAUMA1 |
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IPD50N06S2L-13
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 50A I(D), 55V, 0.0167ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | IPD50N06S2L-13 |
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IPD50R950CEATMA1
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | IPD50R950CEATMA1 |
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IPD50N04S4-10
Rochester Electronics LLC
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1 | 50A, 40V, 0.0093ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, GREEN, PLASTIC PACKAGE-3 | IPD50N04S4-10 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to252_3.jpg"])
![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/1588_TO252-3.jpg"])
![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to252_4.jpg"])
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