IPD60 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IPD60R2K0PFD7S Infineon Technologies AG	1	Power Field-Effect Transistor, 3A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-252	IPD60R2K0PFD7S	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R3K3C6 Infineon Technologies AG	1	Power Field-Effect Transistor, 1.7A I(D), 600V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R3K3C6	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R145CFD7 Infineon Technologies AG	1	Power Field-Effect Transistor, 16A I(D), 600V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R145CFD7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R2K0PFD7SAUMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 3A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-252	IPD60R2K0PFD7SAUMA1	3D model not available Symbol and footprint not available 0	0 Build or Request

	IPD60R1K0CE Infineon Technologies AG	1	Power Field-Effect Transistor, 6.8A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R1K0CE	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R950C6 Infineon Technologies AG	1	Power Field-Effect Transistor, 4.4A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R950C6	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R600CP Infineon Technologies AG	1	Power Field-Effect Transistor, 6.1A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA	IPD60R600CP	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R385CPXT Infineon Technologies AG	1	Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA	IPD60R385CPXT	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R600CPBTMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 6.1A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R600CPBTMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R650CEATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R650CEATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60N10S412ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 60A I(D), 100V, 0.0122ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60N10S412ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R380P6ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R380P6ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R1K5CEATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 5A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R1K5CEATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R210PFD7SAUMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 16A I(D), 600V, 0.21ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-252	IPD60R210PFD7SAUMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R360PFD7S Infineon Technologies AG	1	Power Field-Effect Transistor, 10A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-252	IPD60R360PFD7S	3D model not available Symbol and footprint not available 0	0 Build or Request

	IPD60R385CPATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R385CPATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R210PFD7S Infineon Technologies AG	1	Power Field-Effect Transistor, 16A I(D), 600V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R210PFD7S	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R520CPATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R520CPATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R400CE Infineon Technologies AG	1	Power Field-Effect Transistor, 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R400CE	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R3K4CE Infineon Technologies AG	1	Power Field-Effect Transistor, 2.6A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R3K4CE	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R750E6XT Infineon Technologies AG	1	Power Field-Effect Transistor, 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R750E6XT	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R460CE Infineon Technologies AG	1	Power Field-Effect Transistor, 600V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R460CE	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R360P7 Infineon Technologies AG	1	Power Field-Effect Transistor, 9A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R360P7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R380P6BTMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R380P6BTMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R3K3C6BTMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 600V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R3K3C6BTMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
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