IRFY2 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IRFY240ED International Rectifier	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240ED	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY230-QR-B TT Electronics Resistors	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRFY230-QR-B	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY230C-JQR-B TT Electronics Resistors	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY230C-JQR-B	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240CMSCX International Rectifier	1	Power Field-Effect Transistor, 16A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRFY240CMSCX	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRFY240MR1 TT Electronics Resistors	1	Power Field-Effect Transistor, 16A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240MR1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240MR1 TT Electronics Power and Hybrid / Semelab Limited	1	Power Field-Effect Transistor, 16A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240MR1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240CSCV International Rectifier	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240CSCV	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240-QR-EB TT Electronics Resistors	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFY240-QR-EB	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240MEAPBF International Rectifier	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240MEAPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY230R1 TT Electronics Resistors	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRFY230R1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240-JQR-B TT Electronics Power and Hybrid / Semelab Limited	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFY240-JQR-B	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY210CR1 TT Electronics Power and Hybrid / Semelab Limited	1	Power Field-Effect Transistor, 1.8A I(D), 200V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY210CR1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240(M) International Rectifier	1	200V, 0.19ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA	IRFY240(M)	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY230C-JQR-BR1 TT Electronics Power and Hybrid / Semelab Limited	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY230C-JQR-BR1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY230C-JQR-BR1 TT Electronics Resistors	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY230C-JQR-BR1	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRFY240CM Infineon Technologies AG	1	Power Field-Effect Transistor, 16A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRFY240CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY230SM TT Electronics Resistors	1	Power Field-Effect Transistor, 9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET	IRFY230SM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240EAPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240EAPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240CR1 TT Electronics Power and Hybrid / Semelab Limited	1	Power Field-Effect Transistor, 16A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240CR1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240MEAPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240MEAPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240MEC Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240MEC	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY230-JQR-BR1 TT Electronics Power and Hybrid / Semelab Limited	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRFY230-JQR-BR1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240ME Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240ME	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240MEB Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240MEB	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY220R1 TT Electronics Power and Hybrid / Semelab Limited	1	Power Field-Effect Transistor, 4A I(D), 200V, 0.92ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY220R1	3D model not available Symbol and footprint not available 0	0 Build or Request
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