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IRHM8160U
International Rectifier
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1 | Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IRHM8160U |
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IRHM8130UPBF
International Rectifier
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1 | Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | IRHM8130UPBF |
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IRHM8260PBF
International Rectifier
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1 | Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | IRHM8260PBF |
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IRHM8360PBF
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 22A I(D), 400V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | IRHM8360PBF |
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IRHM8130D
International Rectifier
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1 | Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | IRHM8130D |
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IRHM8130DPBF
International Rectifier
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1 | Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | IRHM8130DPBF |
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