IRLI6 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IRLI630G-013PBF International Rectifier	1	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI630G-013PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI640G-018 International Rectifier	1	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI640G-018	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI620G-031PBF International Rectifier	1	Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI620G-031PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI610A Samsung Semiconductor	1	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRLI610A	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRLI630G-003PBF International Rectifier	1	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI630G-003PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI640G-018PBF International Rectifier	1	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI640G-018PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI630G Vishay Intertechnologies	1	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI630G	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI640G-004PBF International Rectifier	1	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI640G-004PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI620ATU Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.3A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	IRLI620ATU	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI620G-017 International Rectifier	1	Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI620G-017	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI640A Samsung Semiconductor	1	Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRLI640A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI630G-006PBF International Rectifier	1	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI630G-006PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI630A Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	IRLI630A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI630G-002 International Rectifier	1	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI630G-002	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI640G-010PBF International Rectifier	1	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI640G-010PBF	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRLI630G-005 International Rectifier	1	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI630G-005	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI630G-015PBF International Rectifier	1	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI630G-015PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI640G-012 International Rectifier	1	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI640G-012	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI630A Samsung Semiconductor	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRLI630A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI620G-030PBF International Rectifier	1	Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI620G-030PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI620G-009 Vishay Intertechnologies	1	Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI620G-009	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI620G-024PBF International Rectifier	1	Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI620G-024PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI630G-006 International Rectifier	1	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI630G-006	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI630G-017PBF International Rectifier	1	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI630G-017PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI640GPBF International Rectifier	1	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI640GPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
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